Datasheet 2SK2618ALS Datasheet (SANYO)

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Ordering number : ENA0360A

2SK2618ALS

SANYO Semiconductors

N-Channel Silicon MOSFET

DATA SHEET

2SK2618ALS

General-Purpose Switching Device
Applications

Features

• Low ON-resistance.

•

Low Qg.

•

Ultrahigh-speed switching.

•

Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V

Drain Current (DC)
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *3 E
Avalanche Current *4 I

*1 Shows chip capability
*2 Package limited
*3 VDD=50V, L=10mH, IAV=5A
*4 L≤10mH, single pulse

Marking : K2618

DSS
GSS

IDc*1 Limited only by maximum temperature 6.5 A

I

*2 SANYO’s ideal heat dissipation condition 5.6 A

Dpack

DP

AS

AV

PW≤10µs, duty cycle≤1% 20 A

D

Tc=25°C (SANYO’s ideal heat dissipation condition) 30 W

500 V
±30 V

2.0 W

138 mJ

5A

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the

'

customer
device, the customer should always evaluate and test devices mounted in the customer
equipment.

s products or equipment. To verify symptoms and states that cannot be evaluated in an independent

'

s products or

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

22107 TI IM TC-00000528 / 72006QB MS IM TC-00000027

No. A0360-1/4

Electrical Characteristics at Ta=25°C

2SK2618ALS

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.5 5.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=20V , f=1MHz 700 pF
Output Capacitance Coss VDS=20V , f=1MHz 250 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 120 pF
Total Gate Charge Qg VDS=200V, VGS=10V, ID=5A 20 nC
Turn-ON Delay Time td(on) See specified Test Circuit. 20 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 50 ns
Fall Time t
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs





RDS(on) ID=3A, VGS=15V 0.95 1.25 Ω

r

f

SD

=1mA, VGS=0V 500 V
VDS=500V, VGS=0V 1.0 mA
VGS=±30V , VDS=0V ±100 nA

VDS=10V, ID=3A 1.5 3.0 S

See specified Test Circuit. 20 ns

See specified Test Circuit. 25 ns
IS=5A, VGS=0V 1.2 V

min typ max

Ratings

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7509-002

VDD=200V

16.0

14.0

4.5

0.7

1.2

2.8

0.6

PW=1µs
D.C.≤0.5%

P.G

VGS=15V

G

RGS=50Ω

D

ID=3A
RL=66.7Ω

S

V

OUT

2SK2618ALS

16.1

3.6

10.0

0.9

1.2

0.75

3.2

3.5

7.2

Unit

123

2.4

1 : Gate
2 : Drain
3 : Source

2.55

2.55

SANYO : TO-220FI(LS)

Avalanche Resistance Test Circuit

≥50Ω
RG

15V

0V

50Ω

2SK2618ALS

L

V

DD

No. A0360-2/4

2SK2618ALS

I

-- V

7

6

D

DS

15V

10V

7

VDS=10V
Tc=25°C

6

8V

5

-- A
D

4

5

-- A
D

4

I

D

-- V

GS

3

2

Drain Current, I

1

0

0

2.5

2.0

(on) -- Ω

DS

1.5

1.0

Static Drain-to-Source

On-State Resistance, R

0.5

10

-- A

1.0

S

0.1

Source Current, I

0.01

0.001

100

Switching Time, SW Time -- ns

10

681012 14 16 18 20

4

3
2

7
5

3
2

7
5

3
2

7
5
3
2

7
5

3
2

0

7

5

3

2

7

5

0.3 0.6 0.9 1.2 1.5

t

r

7

7V

VGS=6V

2468

Drain-to-Source Voltage, V

RDS(on) -- V

DS

GS

-- V

IT04786

Tc=25°C
ID=3A

Gate-to-Source Voltage, V

I

-- V

S

SD

GS

-- V

IT04788

VGS=0V
Tc=25°C

Diode Forward Voltage, V

SW Time -- I

SD

D

IT04790 IT04791

-- V

VDD=200V
VGS=15V

t

(off)

d

t

f

td(on)

1.0

23 57

Drain Current, I

D

-- A

IT04792

3

2

Drain Current, I

1

fs -- S

y

Forward Transfer Admittance, 

1.0

1000

0

0

7

5

3

2

7
5

3

2

0.1

2

7
5

3

2

51015

Gate-to-Source Voltage, V



y

fs -- I

23 57

1.0 10

Drain Current, I

Ciss, Coss, Crss -- V

-- V

GS

D

23 57

-- A

D

DS

Ciss

Coss

Crss

20

IT04787

VDS=10V
Tc=25°C

IT04789

f=1MHz

10

Ciss, Coss, Crss -- pF

100

7
5

0

5
3

2

10

7
5

3

-- A

2

D

1.0
7
5

3
2

0.1

Drain Current, I

7
5

3
2

10

0.01

1.0

510152025

Drain-to-Source Voltage, V

DS

-- V

A S O

IDP=20A

DS

10

100µs

1ms

-- V

IDc(*1)=6.5A
I

(*2)=5.6A

Dpack

10ms

100ms

DC operation

Operation in this
area is limited by RDS(on).

Tc=25°C
Single pulse

23 57 23 57 23 57

*1. Shows chip capability

SANYO’s ideal heat dissipation condition

*2.

10 100 1000

Drain-to-Source Voltage, V

PW≤10µs

30

µs

IT10848

No. A0360-3/4

2.5

2SK2618ALS

P

P

-- Ta

D

35

D

-- Tc

-- W

2.0

D

1.5

1.0

0.5

Allowable Power Dissipation, P

0

0

20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

E

-- %

120

100

80

60

40

AS

-- Ta

IT03660

30

-- W
D

25

20

15

10

5

Allowable Power Dissipation, P

0

0

20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

IT03659

20

Avalanche Energy derating factor

0

0

25 50 75 100 125 150

Ambient Temperature, Ta -- °C

175

IT10478

Note on usage : Since the 2SK2618ALS is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.

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mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.

This catalog provides information as of February, 2007. Specifications and information herein are subject
to change without notice.

PS

No. A0360-4/4