Datasheet 2SK2616 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

N-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN5620B

2SK2616

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Low Qg.

Package Dimensions

unit:mm

2083B

[2SK2616]

0.85

6.5

5.0

4

0.7

0.6

1

23

2.3

1.5

5.5

0.8

1.6

2.3

2.3

7.0

1.2

7.5

0.5

unit:mm

2092B

[2SK2616]

6.5

5.0

1.55.5

2.3

0.5

0.5

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP

7.0

0.85

1243

0.6

2.3 2.3

0.8

0.5

2.5

1.2

0 to 0.2

O1899TS (KOTO) TA-0835 No.5620–1/4

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA

2SK2616

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=

ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

egrahCetaGlatoTgQVSDI,V002=

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

SSD
SSG

D

PD

D

Tc=25˚C

I

V,Am1=

SSD)RB(

D

V

SSD

SSG

r

f

DS

SD

V

SG

V

)ffo(SG

SD

I

)no(SD

D

SD
SD
SD

)no(d

)ffo(d

I

S

0=005V

SG

V,V005=

0=0.1Am

SG

V,V03±=

0=001±An

SD

I,V01=

Am1=5.35.5V

D

A1=55.01.1S

D

V,A1=

V51=0.30.4

SG

zHM1=f,V02=003Fp
zHM1=f,V02=001Fp
zHM1=f,V02=05Fp

V,A2=

D

V,A2=

0=2.1V

SG

SG

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS31sn
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS71sn

005V
03±V
2A
8A
1W
03W

sgnitaR

nimpytxam

V01=8Cn

˚C
˚C

tinU

Ω

Switching Time Test Circuit

V

GS

15V

0V

PW=1µs
D.C.≤0.5%

P.G

VGS=15V

G

R
50Ω

GS

VDD=200V

D

S

ID=1A
RL=200Ω

2SK2616

V

OUT

No.5620–2/4

2SK2616

5

ID-

V

DS

5

ID-

V

GS

VDS=10V

4

10V

15V

–A

3

D

8.0V

2

Drain Current, I

1

7.0V

VGS=6.0V

0

048121620

Drain-to-Source Voltage, VDS–V

y

|

fs

|

-

I

10

7
5

fs|–S

y

3
2

25°C

1.0
7
5

3
2

Tc=

-

75°C

D

VDS=10V

25°C

Forward Transfer Admittance, |

0.1

0.1

23

75235

1.0

Drain Current, ID–A

8

ID=1A

7

6

– Ω

5

DS(on)

4

3

2

1

Static Drain-to-Source

ON-State Resistance, R

0

-60 -40 -20 0 20 80 100 120 140 1606040

R

DS(on)

Case Temperature, Tc – ˚C Case Temperature, Tc – ˚C

-

Tc

=10V

GS

V

=15V

GS

V

4

–A

3

D

2

Drain Current, I

1

0

02468 16141210

Gate-to-Source Voltage, VGS–V

R

7

6

– Ω

5

DS(on)

4

3

2

1

Static Drain-to-Source

ON-State Resistance, R

0

02468 2212 14 16 18 2010

DS(on)

Gate-to-Source Voltage, VGS–V

5

4

–A

D

3

2

Drain Current, I

1

0

-60 -40 -20 0 20 80 100 120 140 1606040

ID-

°C

25

-

Tc=

25°C

°C

75

-

V

GS

Tc=25°C

I

=2A

D

1A

0.5A

Tc

VDS=10V
VGS=15V

7

6

–V

5

4

GS(off)

3

2

Cutoff Voltage, V

1

0

-60 -40 -20 0 20 80 100 120 140 1606040

V

Case Temperature, Tc – ˚C

GS(off)

-

Tc

VDS=10V

ID=1mA

1000

7
5

3
2

100

7
5

3

Ciss,Coss,Crss – pF

2

10

7
5

0 4 8 121620242832

Ciss,Coss,Crss-V

DS

f=1MHz

Ciss

Coss

Crss

Drain-to-Source Voltage, VDS–V

No.5620–3/4

2SK2616

5

3
2

100

7
5

3
2

Switching Time, SW Time – ns

10

7
5

0.1 1.0

SW Time

t

f

t

d(off)

t

r

t

d(on)

23 57 23 5

Drain Current, ID–A

1.2

1.0

–W

D

0.8

No heat sink

0.6

-

Ta

I

D

2

I

10

DP

7
5

3
2

–A

D

,I

1.0
7
5

Operation in this area

3

is limited by RDS(on).

2

Drain Current

0.1
7
5

Tc=25°C

3

Single pulse

2

23 57 23 57 23 57

A S O

I

D

DC operation

10 100

10ms

<1µs

10µs

100µs

1ms

Drain-to-Source Voltage, VDS–V

-

P

40

D

TcPD-

–W

D

30

20

0.4
10

0.2

Allowable Power Dissipation, P

0

80 100 120 140 1606040200

Allowable Power Dissipation, P

0

80 100 120 140 1606040200

Ambient Temperature, Ta – ˚C Case Temperature, Tc – ˚C

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of October, 1999. Specifications and information herein are subject
to change without notice.

PS No.5620–4/4