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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
2SK2611
DC−DC Converter, Relay Drive and Motor Drive
Applications
Low drain−source ON resistance : R
High forward transfer admittance : |Y
Low leakage current : I
Enhancement−mode : V
Maximum Ratings
Characteristics Symbol Rating Unit
Drain−source voltage V
Drain−gate voltage (RGS = 20 kΩ) V
Gate−source voltage V
Drain current
Drain power dissipation (Tc = 25°C) PD 150 W
Single pulse avalanche energy
(Note 2)
Avalanche current IAR 9 A
Repetitive avalanche energy (Note 3) EAR 15 mJ
Channel temperature Tch 150 °C
Storage temperature range T
(Ta = 25°C)
DC (Note 1) ID 9 A
Pulse (Note 1) I
= 100 µA (max) (VDS = 720 V)
DSS
= 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
th
DS (ON)
DSS
DGR
GSS
DP
E
AS
stg
= 1.1 Ω (typ.)
7.0 S (typ.)
fs| =
900 V
900 V
±30 V
27 A
663 mJ
−55~150 °C
Thermal Characteristics
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC ―
JEITA SC-65
TOSHIBA 2-16C1B
Weight: 4.6 g (typ.)
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
Thermal resistance, channel to
ambient
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
R
0.833 °C / W
th (ch−c)
50 °C / W
th (ch−a)
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2SK2611
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Gate−source breakdown voltage V
Drain cut−off current
Drain−source breakdown voltage V
Gate threshold voltage V
Drain−source ON resistance R
Forward transfer admittance |Yfs| VDS = 15 V, I
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Switching time
Rise time tr — 25 —
Turn−on time ton — 60 —
Fall time tf — 20 —
(Ta = 25°C)
GSS
(BR) GSS
I
DSS
(BR) DSS
th
DS (ON)
— 2040 —
iss
— 45 —
rss
oss
VGS = ±30 V, VDS = 0 V — — ±10 µA
IG = ±10 µA, VDS = 0 V ±30 — — V
VDS = 720 V, VGS = 0 V — — 100 µA
ID = 10 mA, VGS = 0 V 900 — — V
VDS = 10 V, ID = 1 mA 2.0 — 4.0 V
VGS = 10 V, ID = 4 A — 1.1 1.4 Ω
V
DS
= 4 A 3.0 7.0 — S
D
= 25 V, VGS = 0 V, f = 1 MHz
pF
— 190 —
ns
Turn−off time t
Total gate charge (gate−source
plus gate−drain)
Gate−source charge Qgs — 32 —
Gate−drain (“miller”) Charge Qgd
off
Q
— 58 —
g
≈ 400 V, VGS = 10 V, ID = 9 A
V
DD
— 95 —
nC
— 26 —
Source−Drain Ratings and Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode) V
Reverse recovery time t
Reverse recovery charge Q
I
— — — 9 A
DR
I
— — — 27 A
DRP
IDR = 9 A, VGS = 0 V — — −1.9 V
DSF
rr
rr
IDR = 9 A, VGS = 0 V, dIDR / dt = 100 A / µs
(Ta = 25°C)
— 1.6 — µs
— 20 — µC
Marking
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2SK2611
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2SK2611
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2SK2611
RG = 25 Ω
V
= 90 V, L = 15 mH
DD
1
E
AS
IL
2
B
2
VDSS
⋅⋅⋅=
−
VB
DDVDSS
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2SK2611
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
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