Page 1
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD381
DESCRIPTION
With TO-220C package
·
·Complement to type 2SB536
·Low collector saturation voltage
APPLICATIONS
·Audio frequency power amplifier
·Low speed power switching
PINNING
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 130 V
CBO
V
Collector-emitter voltage Open base 120 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
I
C
ICM Collector current-peak 3.0 A
I
B
P
T
Collector current 1.5 A
Base current 0.3 A
Ta=25 1.5
Total power dissipation
=25 20
T
C
W
T
j
T
stg
Junction temperature 150
Storage temperature -50~150
Page 2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD381
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE-1
h
FE-2
Collector-emitter breakdown voltage IC=10mA; IB=0 120 V
Collector-emitter saturation voltage IC=1A; IB=0.1A 2.0 V
Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V
Collector cut-off current VCB=120V; IE=0 1.0 µA
Emitter cut-off current VEB=3V; IC=0 1.0 µA
DC current gain IC=5mA ; VCE=5V 25
DC current gain IC=0.3A ; VCE=5V 40 250
COB Output capacitance IE=0 ; VCB=10V; f=1MHz 25 pF
f
T
Transition frequency IC=0.1A ; VCE=5V 45 MHz
h
Classifications
FE-2
N M L K
40-80 60-120 80-160 120-250
2
Page 3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD381
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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