Datasheet 2SD350A Specification

Page 1
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD350A
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
output applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 1500 V
CBO
V
Collector-emitter voltage Open base 700 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
I
C
ICM Collector current-peak 7 A
P
T
T
j
Collector current 5 A
Total power dissipation TC=90 22 W
Junction temperature 150
T
Storage temperature -55~150
stg
Page 2
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD350A
HARACTERISTICS
C
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
CEO(SUS)
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
h
FE-1
h
FE-2
Collector-emitter sustaining voltage IC=0.1A; IB=0 700 V
Emitter-base breakdown votage IE=10mA; IC=0 5 V
Collector-emitter saturation voltage IC=4.5 A;IB=2A 1.0 V
Base-emitter saturation voltage IC=4.5 A;IB=2A 1.3 V
Collector cut-off current VCB=800V;IE=0 10 µA
DC current gain IC=1A ; VCE=5V 8
DC current gain IC=4A ; VCE=10V 3
2
Page 3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD350A
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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