Page 1
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD325
DESCRIPTION
With TO-220C package
·
·Complement to type 2SB511
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN DESCRIPTION
1 Base
2
3 Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 35 V
CBO
V
Collector-emitter voltage Open base 35 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
I
C
ICM Collector current -peak 3.0 A
P
C
Collector current 1.5 A
Ta=25 1.75
Collector dissipation
TC=25 10
W
T
j
T
stg
Junction temperature 150
Storage temperature -50~150
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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD325
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
V
I
I
h
h
h
CEsat
BE
CBO
EBO
FE-1
FE-2
f
T
Collector-emitter breakdown voltage IC=10mA; IB=0 35 V
Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.0 V
Base-emitter on voltage IC=1A ; VCE=5V 1.5 V
Collector cut-off current VCB=20V; IE=0 0.1 mA
Emitter cut-off current VEB=4V; IC=0 1.0 mA
DC current gain IC=1A ; VCE=2V 40 320
DC current gain IC=0.1A ; VCE=2V 35
Transition frequency IC=0.5A ; VCE=5V 8 MHz
Classifications
FE-1
C D E F
40-80 60-120 100-200 160-320
2
Page 3
SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD325
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
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