Datasheet 2SD2704K, 2SD2705S Datasheet (ROHM) [ru]

2SD2704K / 2SD2705S

Transistors

For Muting (20V, 0.3A)

2SD2704K / 2SD2705S

zFeatures zExternal dimensions (Unit : mm)

1) High DC current gain.
h

FE

= 820 to 2700

2) High emitter-base voltage.
V

EBO

= 25V (Min.)

3) Low Ron
Ron= 0.7Ω (Typ.)

zStructure
Epitaxial planar type
NPN silicon transistor

zPackaging specifications

Package
Code T146 TP

Type
2SD2704K

2SD2705S

Basic ordering
unit (pieces)

Taping

3000 5000

−

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

2SD2704K

2SD2705S
Junction temperature
Storage temperature

Symbol Limits Unit

CBO

V
V

CEO

V

EBO

I

C

P

C

Tj

Tstg

−

50 V
20
25

0.3

0.2

0.3

150

−55 to +150

2SD2704K

ROHM : SMT3
EIAJ : SC-59

2SD2705S

ROHM : SPT
EIAJ : SC-72

V
V
A

W

°C
°C

2.9

0.4

(3)

1.6

2.8

(2)

(1)

0.95 0.95

1.9

Abbreviated symbol : XL

4.0 2.0

3.0

(15Min.)

5.0

(1) (2) (3)

2.5

0.15

3Min.

0.45

0.5

1.1

0.8

(1) Emitter
(2) Base

0.3Min.

(3) Collector

Each lead has same dimensions

0.45

(1) Emitter
(2) Collector
(3) Base

Rev.A 1/4

Transistors

.2

n

n

.2

0

0

)

e

e

)

2SD2704K / 2SD2705S

zElectrical characteristics (T a=25°C)

Min.

Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output On-resistance

Measured using pulse current

∗

BV
BV
BV

V

CBO

CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

Cob
Ron

∗

Typ. Max. Unit Conditions
50
20
25

−

−

−

820

−

−

−

50

35

3.9

0.7

−

−

−

0.1

−

0.1

−

100

2700

−

V

−

V

−

V

−

µA
µA

mV

MHz

−

pF

−

Ω

− I

I

C

=10µA

I

C

=1mA

I

E

=10µA

V

CB

V

EB

I

C/IB

CE

V

CE

V
V

CB

B

=5mA, Vi=100mV(rms), f=1kHz

=50V
=25V

=30mA/3mA
=2V, IC=4mA−
=6V, IE= −4mA, f=10MHz
=10V, IE=0A, f=1MHz

zElectrical characteristic curves

1000

(mA)

C

100

10

0.1

COLLECTOR CURRENT : I

0.1
0 0.2 0.4 0.6 0.8 1 1

BASE TO EMITTER VOLTAGE : V

Ta=125°C

25°C

V

−40°C

BE(ON)

Fig.1 Grounded emitter propagatio
characteristics ( Ι )

CE

=

(V)

1000

2V

(mA)

C

COLLECTOR CURRENT : I

100

10

0.1

0.1
0 0.2 0.4 0.6 0.8 1 1

BASE TO EMITTER VOLTAGE : V

Ta=125°C

25°C

−40°C

BE(ON)

V

CE

=

Fig.2 Grounded emitter propagatio
characteristics (

ΙΙ

)

6V

(V)

10000

Ta=125°C

FE

1000

Ta=25°C

Ta= −40°C

100

DC CURRENT GAIN : h

10

1 10 100 100

COLLECTOR CURRENT : I

Fig.3 DC current gain
vs. collector current ( )

C

(mA)

VCE=2V

10000

FE

1000

100

DC CURRENT GAIN : h

10

1 10 100 100

Fig.4 DC current gain
vs. collector current ( )

Ta=125°C

Ta=25°C

Ta

= −

40°C

COLLECTOR CURRENT : I

C

VCE=6V

(mA)

10000

(mV

CE(sat)

1000

100

10

COLLECTOR SATURATION VOLTAGE : V

Ta=125°C

Ta=25°C

Ta

= −

40°C

1

1 10 100 1000

COLLECTOR CURRENT : I

Fig.5 Collector-emitter saturation voltag
vs. collector current ( )

IC/IB=10/1

C

(mA)

10000

(mV

CE(sat)

1000

Ta=125°C

100

10

1

COLLECTOR SATURATION VOLTAGE : V

1 10 100 1000

COLLECTOR CURRENT : I

Ta=25°C

Ta

= −

40°C

IC/IB=20/1

C

(mA)

Fig.6 Collector-emitter saturation voltag
vs. collector current ( )

Rev.A 2/4

Transistors

)

e

0

)

)

0

e

)

0

0

0

)

0

)

)

)

0

10000

(mV

CE(sat)

1000

2SD2704K / 2SD2705S

IC/IB=50/1

10000

(mV

BE(sat)

IC/IB=10/1

10000

(mV

BE(sat)

IC/IB=20/1

100

10

COLLECTOR SATURATION VOLTAGE : V

Ta=125°C

Ta=25°C

Ta

= −

40°C

1

1 10 100 1000

COLLECTOR CURRENT : I

C

(mA)

Fig.7 Collector-emitter saturation voltag
vs. collector current ( )

10000

(mV

BE(sat)

Ta

= −

1000

100

BASE SATURATION VOLTAGE : V

1 10 100 100

40°C

Ta=125°C

COLLECTOR CURRENT : I

Ta=25°C

IC/IB=50/1

C

(mA)

Fig.10 Base-emitter saturation voltag
vs. collector current ( )

100

Ta

= 25

Ta= −40°C

1000

Ta=125°C

100

BASE SATURATION VOLTAGE : V

1 10 100 100

COLLECTOR CURRENT : I

Fig.8 Base-emitter saturation voltage
vs. collector current ( )

10000

(MHz)

T

TRANSITION FREQUENCY : f

1

11010

EMITTER CURRENT : I

Fig.11 Gain bandwidth product
vs. emitter current

°C

100

Ta=25°C

C

E

(mA)

(mA)

Ta=

25°C

f=50MHz

E

=0A

I

Ta

= 25

Ta= −40°C

1000

Ta=125°C

100

BASE SATURATION VOLTAGE : V

1 10 100 100

COLLECTOR CURRENT : I

Ta=25°C

Fig.9 Base-emitter saturation voltage
vs. collector current ( )

100

(pF

(pF)

10

1

0.1

EMITTER INPUT CAPACITANCE : Cib

COLLECTOR OUTPUT CAPACITANCE : Cob

11010

COLLECTOR TO BASE VOLTAGE : VCB
EMITTER TO BASE VOLTAGE : VEB

Fig.12 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage

°C

C

(mA)

Ta=

25°C

f=1MHz

E=0A

I

(V)

(V

(Ω)

10

1

ON RESISTANCE : Ron

See Fig.15

0.1

0.01 0.1 1 10

Fig.13 Output-on resistance vs. base current (

BASE CURRENT : I

B

10

(mA)

(Ω)

10

1

ON RESISTANCE : Ron

See Fig.16

0.1

0.01 0.1 1 10
BASE CURRENT : I

Fig.14 Output-on resistance vs. base current (

B

10

(mA)

Rev.A 3/4

Transistors

ut

1

ut

1

zRon measurement circuit

RL=1kΩ

RL=1kΩ

2SD2704K / 2SD2705S

Input

V

i

00mV(rms)

1V(rms)

f=1kHz

Ron= ×R

vi−v

Fig.15 Ron measurement circuit ( )

0

Input

V

i

00mV(rms)

1V(rms)

f=1kHz

v

Ron= ×R

vi−v

Fig.16 Ron measurement circuit ( )

Outp

V

v

0

B

I

0

L

0

Outp

V

v

B

I

v

0

L

0

Rev.A 4/4

Appendix

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Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Notes

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Should you intend to use these products with equipment or devices which require an extremely high level of
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About Export Control Order in Japan

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Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1