Page 1
2SD2656
Transistors
General purpose amplification (30V, 1A)
2SD2656
!!!!Application
)
Low frequency amplifier
!!!!Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE(sat) ≤ 350mV
At I
C = 500mA / IB = 25mA
!!!!External dimensions (Units : mm)
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗Single pulse, PW=1ms
V
V
V
I
P
Tstg
CBO
CEO
EBO
I
CP
Tj
C
C
Limits
30
30
6
1
2
200
150
−55~+150 °C
!!!!Electrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
BV
BV
V
CBO
CEO
EBO
I
CBO
EBO
I
CE(sat)
FE
h
T
f
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗1 Pulsed
V
V
V
A
∗
A
mW
°C
30
−−
30
−−
6
−−
−−
−−
140 350 mV
−
270
−
400
−
5
−
100 nA
100 nA
680
MHz
−
pF
−
0.3
0.15
0.1Min.
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
Abbreviated symbol : EU
!!!!Packaging specifications
Package
Code
Type
Basic ordering unit (pieces)
2SD2656
V
I
C
=10µA
V
C
=1mA
I
V
E
=10µA
I
VCB=30V
EB
=6V
V
IC/IB=500mA/25mA
− V
CE/IC
=2V/100mA
VCE=2V, IE=−100mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
1
(
0.65
)
2
)
3
(
1.25
2.1
Each lead has same dimensions
0~0.1
1.3
(
0.65
0.2
0.9
0.7
2.0
(1) Emitter
(2) Base
(3) Collector
1
∗
1
∗
Taping
T106
3000
1/2
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2SD2656
Transistors
!!!!Electrical characteristic curves
1000
FE
Ta=25°C
Ta=100°C
Ta=−40°C
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
1
(A)
C
0.1
Ta=100°C
0.01
Ta=25°C
Ta=−40°C
VCE=2V
Pulsed
C
(A)
VCE=2V
Pulsed
10
(V)
(V)
BE (sat)
CE (sat)
Ta=−40°C
Ta=100°C
1
Ta=25°C
V
BE(sat)
0.1
V
CE(sat)
0.01
0.001 0.01 0.1 1
BASE SATURATION VOLTAGE : V
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
Ta=100°C
IC/IB=20/1
IC/IB=20
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
C
10
(V)
CE(sat)
Ta=25°C
V
CE
=2V
1
0.1
IC/IB=50/1
IC/IB=20/1
0.01
0.001
(A)
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
IC/IB=10/1
COLLECTOR CURRENT : I
C
(A)
Fig.3 Collector-emitter saturation voltage
vs. collector current
1000
tdon
100
tr
10
tf
tstg
COLLECTOR CURRENT : I
0.001
0
BASE TO EMITTER VOLTAGE : V
Fig.4 Grounded emitter propagation
characteristics
100
Cib
Cob
10
1
0.01 0.1 1 10 100
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
1.51.00.5
BE
(V)
IC=0A
f=1MHz
Ta=25°C
EB
CB
TRANSITION FREQUENCY : f
10
0.01 0.1 1
10
(A)
C
0.1
0.01
COLLECTOR CURRENT : I
0.001
(V)
(V)
VCE=2V
Ta=25°C
f=100MHz
EMITTER CURRENT : I
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
P
W
=100ms
1ms
10ms
CE
1
DC Operation
Ta=25°C
Single Pulse
0.1 1 10 100
COLLECTOR TO EMITTER VOLTAGE : V
Fig.8 Safe Operating Area
SWITCHING TIME : (ns)
Ta=25°C
V
CE
=5V
C/IB
=20/1
I
1
0.01 0.1 1
COLLECTOR CURRENT : I
Fig.6 Switching time
(V)
C
(A)
2/2
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Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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