Page 1
2SD2653
Transistors
Low frequency amplifier
2SD2653
zApplicat ion
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
CE(sat)
≦ 180mV
C
= 1A / IB = 50mA
at I
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Single pulse, PW=1ms
∗2 Mounted on a 25
t
×25×
0.8mm Ceramic substrate
CBO
V
V
CEO
V
EBO
I
I
CP
P
Tj
Tstg
C
C
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗ Pulsed
zPackaging specifications
Package
Code
Type
Basic ordering unit (pieces)
2SD2653
Limits
15
12
6
2
4
500
∗2
1W
150
−55 to +150
BV
BV
BV
I
I
CE(sat)
V
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
15
12
270 − 680
Cob − 20 −
Taping
TL
3000
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
Unit
V
V
V
A
∗1
A
mW
°C
°C
−−
−−
6
−−
−−
−−
− 90
360
−
100
100
180 mV
V
V
V
nA VCB=15V
nA VEB=6V
− VCE=2V, IC=200mA
MHz
−
pF
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
I
C
=10µA
C
=1mA
I
I
E
=10µA
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
IC=1A, IB=50mA
∗
VCE=2V, IE=−200mA, f=100MHz
CB
=10V, IE=0A, f=1MHz
V
∗
Rev.B 1/2
Page 2
2SD2653
0
0
0
e
.5
0
0
0
)
Transistors
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
10
0.001 0.01 0.1 1 1
Ta=100°C
Ta=25°C
Ta=−40°C
COLLECTOR CURRENT : I
Fig.1 DC current gain
vs. collector current
10
(A)
C
1
Ta=100°C
0.1
Ta=25°C
VCE=2V
Pulsed
C
(A)
VCE=2V
Pulsed
1
IC/IB=20/1
V
CE
=2V
(V)
Pulsed
CE(sat)
0.1
Ta=100°C
0.01
COLLECTOR TO EMITTER
SATURATION VOLTAGE : V
0.001
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I
Fig.2 Base-emitter saturation voltage
vs. collector current
1000
(MHz)
T
100
Ta=25°C
Ta=−40°C
C
(A)
Ta=25°C
CE
=2V
V
f=100MHz
1
(V)
Ta=25°C
Pulsed
CE(sat)
0.1
IC/IB=50/1
0.01
IC/IB=20/1
IC/IB=10/1
0.001
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : I
COLLECTOR SATURATION VOLTAGE : V
Fig.3 Collector-emitter saturation voltag
vs. collector current
1000
100
C
(A)
Ta=25°C
VCE=5V
f=100MHz
tstg
Ta=−40°C
0.01
COLLECTOR CURRENT : I
0.001
0 0.5 1 1
BASE TO EMITTER CURRENT : V
BE
Fig.4 Grounded emitter propagation
characteristics
TRANSITION FREQUENCY : f
10
0.001 0.01 0.1 1 1
(V)
EMITTER CURRENT : I
E
(A)
Fig.5 Gain bandwidth product
vs. emitter current
10
SWITCHING TIME : (ns)
1
0.01 0.1 1 1
COLLECTOR CURRENT : I
C
Fig.6 Switching time
tdon
tf
tr
(A)
1000
100
10
1
0.1
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
COLLECTOR TO BASE VOLTAGE : V
Fig.7 Collector output capacitance
Cib
11010
Cob
Ta=25˚C
I
f=1MHz
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
C
=
0A
EB
V)
(
CB
V)
(
Rev.B 2/2
Page 3
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
Loading...