Datasheet 2SD2648 Datasheet (SANYO)

Page 1
Ordering number : ENN6923
2SD2648
NPN Triple Diffused Planar Silicon Transistor
2SD2648
Color TV Horizontal Deflection
Output Applications
Features
High speed.
High breakdown voltage(V
High reliability(Adoption of HVP process).
Adoption of MBIT process.
=1500V).
Specifications
Package Dimensions
unit : mm
2174A
[2SD2648]
3.4
16.0
5.0
2.8
0.7
22.0
2.0
20.4
3.5
21.0
5.45
4.0
123
5.45
5.6
3.1
8.0
0.8
2.1
0.9
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PMLH
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage V Collector-to-Emitter Voltage V Emitter-to-Base Voltage V Collector Current I Collector Current (Pulse) I
Collector Dissipation P Junction T emperature Tj 150 ° C
Storage T emperature T stg --55 to +150 °C
CBO CEO EBO
C
CP
C
Tc=25°C85W
1500 V
700 V
5V 15 A 35 A
3.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Collector Cutoff Current I Collector Cutoff Current I Collector Sustain Voltage V Emitter Cutoff Current I
CBO CES
CEO
EBO
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max VCB=800V, IE=0 10 µA VCE=1500V , RBE=0 1.0 mA
(sus) IC=100mA, IB=0 700 V
VBE=4V, IC=0 1.0 mA
Unit
Continued on next page.
41301 TS IM TA-3090
No.6923-1/4
Page 2
2SD2648
Continued from preceding page.
Parameter Symbol Conditions
Collector-to-Emitter Saturation Voltage VCE(sat) IC=10.8A, IB=2.16A 3 V Base-to-Emitter Saturation Voltage VBE(sat) IC=10.8A, IB=2.16A 1.5 V
DC Current Gain Fall Time t
hFE1VCE=5V, IC=1A 15 hFE2VCE=5V, IC=12A 5 8
IC=7A, IB1=1.4A, IB2=--2.8A 0.3 µs
f
min typ max
Switching Time Test Circuit
I
PW=20µs D.C.1%
B1
I
B2
OUTPUT
Ratings
Unit
INPUT
12
10
-- A
8
C
6
4
Collecotr Current, I
2
1.8A
V
50
R
R
100µF 470µF
I
C
2.0A
B
+
-- V
CE
R
L
28.6
+
VCC=200VVBE= --2V
I
-- V
C
12
BE
VCE=5V
1.6A
1.4A
10
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
-- A
8
C
6
4
Collector Current, I
2
C
°
Ta=120
C
°
C
°
25
--40
0
01 3 5 7 9
2468
Collector-to-Emitter Voltage, VCE -- V
h
-- I
25
--40
°C
°
FE
C
100
7 5
3
FE
2
10
7 5
DC Current Gain, h
3 2
1.0
0.1 1.0 10
Ta=120°C
23 57 2 2357
C
Collector Current, IC -- A
I
=0
B
10
IT02994
VCE=5V
IT02996 IT02997
0
0.20 0.4 0.6 0.8 1.0 1.41.2
Base-to-Emitter V oltage, VBE -- V
10
IC / IB=5
7 5
3 2
1.0
(sat) -- V
7
CE
5
25
3
°
C
2
0.1 7 5
3
Collector-to-Emitter
Saturation V oltage, V
2
0.01
0.1 1.0 10
Ta= --40°
23 57 2 2357
VCE(sat) -- I
C
C
120°
Collector Current, IC -- A
C
IT02995
No.6923-2/4
Page 3
2SD2648
10
7 5
3 2
SW Time -- I
t
stg
C
VCC=200V IC / IB1=5 I R load
B2 / IB1
=2
10
7 5
3 2
SW Time -- I
t
stg
B2
VCC=200V IC=7A IB1=1.4A R load
1.0 7
5
3
Switching Time, SW Time -- µs
2
0.1
100
10
-- A C
1.0
0.1
Collector Current, I
0.01
23 7 52237
0.1
7
ICP=35A
5 3
IC=15A
2
7 5
3 2
7 5
3 2
7 5
3
Tc=25°C
2
Single pulse
1.0
357235723572
Collector-to-Emitter Voltage, VCE -- V
3.5
3.0
-- W
2.5
C
2.0
t
f
5
1.0 10
Collector Current, IC -- A
Forward Bias A S O
100µs
P
C
=85W
10ms
DC operation
10 100 1000
P
-- Ta
C
No heat sink
300µs
1ms
IT02998
IT03000
1.0 7
5
3
Switching Time, SW Time -- µs
2
0.1
0.1
5 3
2
10
7
-- A C
5 3
2
1.0 7 5
Collector Current, I
3 2
0.1
100
23 7 523 7
Collector-to-Emitter Voltage, VCE -- V
90 85 80
70
-- W C
60
50
t
f
5
1.0 10
Base Current, IB2 -- A
Reverse Bias A S O
23 257
P
-- Tc
C
IT02999
L=500µH IB2= --3A Tc=25°C Single pulse
1000
IT03001
1.5
1.0
Collector Dissipation, P
0.5
0020 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT03002
40
30
20
Collector Dissipation, P
10
0020 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT03003
No.6923-3/4
Page 4
2SD2648
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2001. Specifications and information herein are subject to change without notice.
PS
No.6923-4/4
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