Datasheet 2SD2423 Datasheet (HIT)

2SD2423

Silicon NPN Epitaxial, Darlington

Application

Low frequency power amplifier

Features

The transistor with a built-in zener diode of surge absorb.

Outline

UPAK

0.5 Ω
(Typ)

2, 4

3

I

D

1

2

3

1

4

1. Base

2. Collector

3. Emitter

4. Collector (Flange)

2 kΩ

(Typ)

2SD2423

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation PC*

CBO

CEO

EBO

C

1

Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Collector to emitter diode forward current I

D

Note: 1. When using the ceramic board 0.7 mm thick (12.5 mm x 20 mm).

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown
voltage

Collector to emitter breakdown
voltage

Collector to emitter sustaining
voltage

Emitter to base breakdown
voltage

Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation

voltage
Collector to emitter saturation

voltage
Base to emitter saturation

voltage
Base to emitter saturation

voltage
Emitter to collector diode

forward voltage
Notes: 1. Pulse test

2. Marking is “GT”.

V

(BR)CBO

V

(BR)CEO

V

CEO(sus)

V

(BR)EBO

CEO

FE

V

CE(sat)1

V

CE(sat)2

V

BE(sat)1

V

BE(sat)2

V

D

50 — 70 V IC = 100 µA, IE = 0

50 — — V IC = 10 mA, RBE = ∞

50 — 70 V IC = 1.5 A, RBE = ∞,

7——VI

——10µAV
2000 — 10000 V
— — 1.5 V IC = 1 A, IB = 1 mA*

— — 2.3 V IC = 1.5 A, IB = 1.5 mA*

— — 2.0 V IC = 1 A, IB = 1 mA*

— — 2.5 V IC = 1.5 A, IB = 1.5 mA*

— — 3.5 V ID = 1.5 A*

50 V
50 V
7V

1.5 A
1W

1.5 A

L = 10 mH*

= 50 mA, IC = 0

E

= 40 V, RBE = ∞

CE

= 3 V, IC = 1 A*

CE

1

1

1

1

1

1

1

2

2SD2423

Maximum Collector Dissipation Curve

2.0

1.5

1.0

0.5

(on the alumina ceramic board)

Collector Power Dissipation Pc (W)

0 50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

C

2.0

1.6

1.2

Pc = 1 W

0.7 mA

0.6 mA

0.9 mA

0.8 mA

1 mA

0.5 mA

0.4 mA

0.3 mA

0.8

10

Area of Safe Operation

Pw = 10 ms

1

C

DC Operation

0.1

0.01

Collector Current I (A)

Ta = 25°C
1 shot pulse

0.001

0.1 1 10 100
Cellector to Emitter Voltage V (V)

DC Current Transfer Ratio vs.

Collector Current

10000

V = 3 V

FE

5000

Ta = 75°C

pulse

2000

1000

500

25°C

–25°C

1 ms

CE

CE

0.4

Collector Current I (A)

I = 0

B

0.2 mA

Ta = 25°C

012345

Collector to Emitter Voltage V (V)

CE

200

DC Current Transfer Ratio h

100

0.1 0.2 0.5 1 2 5 10
Collector Current I (A)

C

3

2SD2423

Collector to Emitter Saturation Voltage vs.

Collector Current

10

I / I = 200

C

B

pulse

5

CE(sat)

2

V (V)

1

Ta = –25°C

0.5

25°C

75°C

0.2

Collector to Emitter Saturation Voltage

0.1

0.1 0.2 0.5 1 2 5 10
Collector Current I (A)

C

Collector Current vs.

Base to Emitter Voltage

3000

V = 3 V

CE

pulse

1000

300

C

100

Ta = –25°C

25°C

75°C

30
10

Base to Emitter Saturation Voltage vs.

Collector Current

10

5

Ta = –25°C
25°C
75°C

BE(sat)

2

V (V)

1

0.5

0.2
I / I = 200

0.1

C

pulse

B

Base to Emitter Saturation Voltage

0.1 0.2 0.5 1 2 5 10
Collector Current I (A)

C

Collector Output Capacitance vs.

Collector to Base Voltage

100

Ta = 25°C
I = 0

50

E

f = 1 MHz

20

10

5

3

Collector Current I (mA)

1

0 0.4 0.8 1.2 1.6 2.0

Base to Emitter Voltage V (V)

4

BE

2
1

Collector Output Capacitance Cob (pF)

0.1 0.2 0.5 1 2 5 10
Collector to Base Voltage V (V)

CB

Unit: mm

0.53 Max

0.48 Max

4.5 ± 0.1

1.8 Max

1.5

1.5

3.0

1.5 ± 0.1

0.4

φ

1

0.44 Max

(1.5)

(2.5)

2.5 ± 0.1

4.25 Max

0.44 Max

(0.4)

(0.2)

0.8 Min

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

UPAK
—
Conforms

0.050 g

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