Page 1
Transistors
Medium Power Transistor (60V, 2A)
2SD2391
zFeatures
1) Low saturation voltage , typically
V
CE (sat) =0.13V at IC / IB =1A /50mA.
2) Collector-emitter voltage =60V
3) Pc = 2W (on 40×40×0.7mm ceramic board).
4) Complements the 2SB1561.
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40 40 0.7mm ceramic board.
+
+
CBO
V
VCEO
VEBO
IC
PC
Tj
Tstg
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
BV
BV
BV
I
I
V
CE(sat)
Cob
CBO
EBO
h
h
f
CBO
CEO
EBO
FE1
FE2
T
Limits
60
60
6
2
6
0.5
2
150
−55 to +150
60
60
6
−
−
−
120
45
−
−
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
(3)(2)(1)
0.5
1.51.5
(1)Base
(2)Collector
(3)Emitter
3.0
Unit
V
V
V
A
∗
1
A
W
∗
2
°C
°C
I
V
V
V
µA
µA
V
−
−
MHz
pF
C
=50µA
C
=1mA
I
I
E
=50µA
V
CB
=50V
EB
=5V
V
I
C/IB
=1A/50mA
CE/IC
V
CE/IC
V
CE
=2V, IE=−0.5A, f=100MHz
V
V
CB
=10V, IE=0A, f=1MHz
0.13
210
21
−
−
−
−
−
−
−
−
0.1
0.1
0.35
270
−
−
−
−
−
0.5
2.5
4.0
1.0
0.40.4
=−2V/−0.5A
=−2V/−1.5A
1.5
2SD2391
0.4
∗
∗
Rev.A 1/3
Page 2
Transistors
zPackaging specifications and h
Type 2SD2391
16mA
I
B
=0mA
MPT3
DT
T100
1000
Ta=
VCE=5V
Q
14mA
12mA
2V
1V
∗
10mA
8mA
6mA
4mA
2mA
Ta=25
25
Package
h
FE
Marking
Code
Basic ordering unit (pieces)
Denotes h
∗
FE
z Electrical characteristic curves
2.0
(A)
C
1.6
1.2
CURRENT : l
0.8
0.4
20mA
18mA
COLLECTOR
0.0
045
COLLECTOR TO EMITTER VOLTAGE
231
Fig.1 Grounded emitter output
characteristics
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10m 20m 50m 100m 200m 500m
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
FE
5
2
1
(A)
C
500m
200m
100m
50m
20m
10m
5m
COLLECTOR CURRENT : I
°C
: VCE (V)
C
°
10512
2m
1m
0.40.2 0.80.6 1.2 1.41.0 1.60
BASE TO EMITTER VOLTAGE : V
Fig.2 Grounded emitter propagation
characteristics
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
1
5m 10m 20m 50m 100m 200m 500m
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation
voltage vs. collector current ( Ι )
C
°
100
25°C
=
Ta
Ta=100°C
−40°C
2SD2391
VCE=2V
C
−40°
BE
(V)
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
10m 20m 50m 100m200m 500m
100
Ta=
COLLECTOR CURRENT : IC (A)
°C
25
°C
°C
40
−
12 510
Fig.3 DC current gain vs.
collector current ( Ι )
1000
(mV)
500
CE(sat)
200
100
50
20
10
5
2
512
1
5m 10m 20m 50m100m 200m 500m
COLLECTOR SATURATION VOLTAGE : V
=50
B
/I
C
I
20
10
COLLECTOR CURRENT : IC (A)
25°C
20
=
B
/I
C
I
Fig.6 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
VCE=2V
Ta=25°C
512
Rev.A 2/3
Page 3
Transistors
1000
500
(MHz)
T
200
100
50
20
10
5
2
TRANSITION FREQUENCY : f
1
−2m −10m −100m −1 −2
EMITTER CURRENT : IE (A)
Fig.7 Gain bandwidth product
vs. emitter current
Ta=25°C
=2V
CE
V
1000
(pF)
500
(pF)
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
EMITTER INPUT CAPACITANCE : Cib
COLLECTOR OUTPUT CAPACITANCE : Cob
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : V
Cib
Cob
Ta=25°C
=1MHz
f
=0A
E
I
=0A
C
I
EB
(V)
Fig.8 Iutput capacitance vs. voltage
2SD2391
50
(A)
20
C
10
Ic max(Pulse)
5
2
1
500m
200m
100m
50m
COLLECTOR CURRENT : l
Ta=25°C
20m
Single pulse
10m
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
P
Pw=
W
P
=
100ms
10ms
W
=1ms
DC
0.210.5 2 5 10 20 50 100 200 500
Fig.9 Safe operating area
Rev.A 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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