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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1761
ESCRIPTION
D
·With TO-220Fa package
·Low collector saturation voltage
·Complement to type 2SB1187
·Wide safe operating area
APPLICATIONS
·For low frequency power
amplifier applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
Collector-base voltage Open emitter 80 V
CBO
V
Collector-emitter voltage Open base 60 V
CEO
V
Emitter-base voltage Open collector 5 V
EBO
I
C
ICM Collector current-Peak 6 A
P
C
T
j
Collector current (DC) 3 A
TC=25 30
Collector power dissipation
T
=25
a
Junction temperature 150
2
W
T
Storage temperature -55~150
stg
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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1761
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
Collector-emitter breakdown voltage IC=1mA , IB=0 60 V
Collector-base breakdown voltage IC=50µA , IE=0 80 V
Emitter-base breakdown voltage IE=50µA , IC=0 5 V
Collector-emitter saturation voltage IC=2A IB=0.2A 1.0 V
Base-emitter saturation voltage IC=2A IB=0.2A 1.5 V
Collector cut-off current VCB=60V IE=0 10 µA
Emitter cut-off current VEB=4V; IC=0 10 µA
hFE DC current gain IC=0.5A ; VCE=5V 60 320
f
T
Transition frequency IC=0.5A ; VCE=5V 8 MHz
Cob Output capacitance IE=0 ; VCB=10V ,f=1MHz 90 pF
h
Classifications
FE
D E F
60-120 100-200 160-320
2
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SavantIC Semiconductor Product Specification
Silicon NPN Power Transistors 2SD1761
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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