Datasheet 2SD1754A, 2SD1754 Datasheet (Panasonic)

Po wer Transistors

2SD1754, 2SD1754A

Silicon NPN triple diffusion planar type

For power amplification with high forward current transfer ratio

Features

■

●

High foward current transfer ratio h

●

Satisfactory linearity of foward current transfer ratio h

●

I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1754
2SD1754A
2SD1754

2SD1754A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

V

V
I

CP

I

C

I

B

P

C

T

j

T

stg

CBO

CEO

EBO

FE

=25˚C)

C

Ratings

80

100

60
80

6
6
3
1

15

1.3

150

–55 to +150

FE

Unit

V

V

V
A
A
A

W

˚C
˚C

10.2±0.3

7.2±0.3

+0.3

–0.

10.0

7.2±0.3

7.0±0.3

3.0±0.2

0.8±0.21.0±0.2

4.6±0.4

7.0±0.3

1.1±0.1

123

4.6±0.4

1.1±0.1

0.75±0.1

2.3±0.2

213

2.0±0.2

3.0±0.2

0.75±0.1

2.3±0.2

3.5±0.2

1:Base
2:Collector
3:Emitter
I Type Package

3.5±0.2

1.0 max.

2.5

0.5 max.

1:Base
2:Collector
3:Emitter
I Type Package (Y)

Unit: mm

0.85±0.1

0.4±0.1

Unit: mm

0 to 0.15

0.9±0.1
0 to 0.15

1.01.0

2.5±0.2

2.5±0.2

Electrical Characteristics (T

■

Parameter

Collector cutoff
current

2SD1754

2SD1754A
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage

2SD1754

2SD1754A
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency

*

hFE Rank classification

Rank Q P

h

500 to 1000 800 to 1500

FE

C

Symbol

I

CBO

I

CEO

I

EBO

V

CEO

*

h

FE

V

CE(sat)

f

T

=25˚C)

Conditions

VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VEB = 6V, IC = 0

IC = 25mA, IB = 0

VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz

min

60
80

500

typ30max

100
100
100
100

1500

1

Unit

µA

µA
µA

V

V

MHz

1

Po wer Transistors 2SD1754, 2SD1754A

PC—Ta IC—V

20

)
W

(

(1)

C

15

10

5

(2)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

(1) TC=Ta
(2) Without heat sink

V

CE(sat)—IC

(P

C

=1.3W)

)

IC/IB=40

TC=100˚C

25˚C

–25˚C

)

CE

1.0

0.8

)
A

(

C

0.6

0.4

Collector current I

0.2

0

012108264

IB=1.2mA

1mA

0.7mA

0.6mA

0.5mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

TC=100˚C

1000

Forward current transfer ratio h

25˚C

–25˚C

300

100

30

10

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

TC=25˚C

0.4mA

0.3mA

0.2mA

0.1mA

VCE=4V

)

5

4

)
A

(

C

3

2

Collector current I

1

0

01.21.00.80.2 0.60.4

)

Base to emitter voltage VBE (V

10000

3000

)
MHz

1000

(

T

300

100

30

10

Transition frequency f

3

1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

25˚C

TC=100˚C

fT—I

C

VCE=12V
f=10MHz
T

C

Collector current IC (A

–25˚C

)

=25˚C

)

Area of safe operation (ASO) R

100

30

)

10

A

I

(

CP

C

I

C

3

300ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

10ms

Non repetitive pulse

=25˚C

T

C

t=1ms

2SD1754

2SD1754A

Collector to emitter voltage VCE (V

)

3

10

)
˚C/W

2

(

10

(t)

th

10

1

Thermal resistance R

–1

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10