Datasheet 2SD1705 Specification

Power Transistors

2SD1705

Silicon NPN epitaxial planar type

For power switching

Complementary to 2SB1154

■ Features

• Low collector-emitter saturation voltage V

• Satisfactory linearity of forward current transfer ratio h

• Large collector current I

C

• Full-pack package which can be installed to the heat sink with one
screw

CE(sat)

FE

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Ta = 25°C 3.0

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

130 V

80 V

7V

10 A

20 A

70 W

150 °C

−55 to +150 °C

±0.5

21.0

±0.5

16.2

(0.7)

±0.2

15.0

(3.5)

Solder Dip

15.0

±0.3

11.0

±0.2

1.1

5.45

10.9

±0.5

123

φ 3.2

±0.1

2.0

±0.2

±0.1

±0.3

TOP-3F-A1 Package

Unit: mm

5.0

±0.2

(3.2)

2.0

0.6

±0.2

1: Base
2: Collector
3: Emitter

EIAJ: SC-92

±0.1

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage (Base open) V

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

CEOIC

I

CBO

I

EBO

FE1

h

FE2

h

FE3

CE(sat)1IC

V

CE(sat)2IC

BE(sat)1IC

V

BE(sat)2IC

Transition frequency f

Turn-on time t

Storage time t

on

stg

Fall time t

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank Q P

h

FE2

90 to 180 130 to 260

= 10 mA, IB = 080V

VCB = 100 V, IE = 010µA

VEB = 5 V, IC = 050µA

VCE = 2 V, IC = 0.1 A 45 

*VCE = 2 V, IC = 3 A 90 260

VCE = 2 V, IC = 6 A 30

= 6 A, IB = 0.3 A 0.5 V

= 10 A, IB = 1 A 1.5

= 6 A, IB = 0.3 A 1.5 V

= 10 A, IB = 1 A 2.5

VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz

T

IC = 6 A, IB1 = 0.6 A, IB2 = − 0.6 A

0.5 µs

VCC = 50 V 2.0 µs

f

0.2 µs

Publication date: September 2003 SJD00210BED

1

2SD1705

PC  T

120

100

(W)

C

80

(1)

60

40

20

(2)

Collector power dissipation P

(3)

0

0 15025 12550 10075

a

(1)TC=Ta
(2)With a 100×100×2mm

Al heat sink

(3)Without heat sink

(P

=3.0W)

C

Ambient temperature Ta (°C)

V

 I

10

(V)

CE(sat)

1

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10

CE(sat)

C

IC/IB=10

TC=100˚C

25˚C

Collector current IC (A)

–25˚C

IC  V

IB=400mA

250mA

200mA

CE

160mA

120mA

100mA

(A)

C

20

16

12

8

Collector current I

4

0

012210486

Collector-emitter voltage VCE (V)

V

 I

100

BE(sat)

C

(V)

BE(sat)

10

TC=–25˚C

1

100˚C

25˚C

0.1

Base-emitter saturation voltage V

0.01

0.01

0.1 1 10

Collector current IC (A)

TC=25˚C

80mA

60mA

40mA

20mA

I

C/IB

=10

V

 I

10

(V)

CE(sat)

1

0.1

Collector-emitter saturation voltage V

0.01

0.1 1 10

CE(sat)

C

(1) IC/IB=10
(2) I

C/IB

T

=25˚C

C

Collector current IC (A)

hFE  I

C

1

000

FE

TC=100˚C

100

10

25˚C

–25˚C

VCE=2V

Forward current transfer ratio h

1

0.1 101

Collector current IC (A)

=20

(2)

(1)

fT  I

000

1

100

(MHz)

T

10

1

Transition frequency f

0.1

0.01 0.1 1 10

Collector current IC (A)

2

C

VCE=10V
f=1MHz
T

=25˚C

C

100

)
µs

(

f

10

, Fall time t

stg

1

, Storage time t

on

0.1

Turn-on time t

0.01
08264

Collector current IC (A)

SJD00210BED

t

on , tstg , tf

t

stg

t

on

t

f

 I

C

Pulsed tw=1ms
Duty cycle=1%
I

=10(IB1=–IB2)

C/IB

V

=50V

CC

T

=25˚C

C

Safe operation area

100

I

CP

I

C

10

(A)

C

1

Collector current I

0.1

0.01
1

Collector-emitter voltage VCE (V)

Non repetitive pulse
T

C

DC

10 100

=25˚C

t=10ms

t=1ms

1 000

2SD1705

4

10

3

10

(°C/W)

th

2

10

10

1

Thermal resistance R

−1

10

10

−3

−4

10

Rth  t

Note: Rth was measured at Ta=25˚C and under natural convection.

(1)P

=10V×0.2A(2W) and without heat sink

T

(2)P

=10V×1.0A(10W) and with a 100×100×2mm Al heat sink

T

−1

−2

10

10110

Time t (s)

2

10

(1)

(2)

3

10

4

10

SJD00210BED

3

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2002 JUL