Page 1
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
V
B
IB=1mA
R
on
= ✕1000(Ω)
f=1kHz
V=0.3V
1kΩ
V
A
V
V
VA–V
B
V
B
2SD1328
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
Features
■
●
Low collector to emitter saturation voltage V
●
Low ON resistance Ron.
●
High foward current transfer ratio hFE.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
*1
hFE Rank classification
Marking Symbol 1DR 1DS 1DT
CE(sat)
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Parameter
Rank R S T
h
FE
200 ~ 350 300 ~ 500 400 ~ 800
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
*1
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
*3
R
on
Ratings
25
20
12
1
0.5
200
150
–55 ~ +150
VCB = 25V, IE = 0
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 2V, IC = 0.5A
IC = 0.5A, IB = 20mA
IC = 0.5A, IB = 50mA
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
.
Unit
V
V
V
A
A
mW
˚C
˚C
Conditions
*2
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : 1D
*2
*2
*3
Ron Measurement circuit
min
25
20
12
200
typ
max
100
800
0.13
200
10
1.0
*2
Pulse measurement
0.4
1.2
Unit: mm
Unit
nA
V
V
V
V
V
MHz
pF
Ω
1
Page 2
Transistor
2SD1328
PC — Ta IC — V
240
)
mW
200
(
C
160
120
80
40
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
Ta=–25˚C
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
C
IC/IB=10
25˚C
75˚C
)
V
CE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
0654132
)
Collector to emitter voltage VCE (V
hFE — I
1200
FE
1000
800
Ta=75˚C
600
400
200
Forward current transfer ratio h
25˚C
–25˚C
0
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IB=4.0mA
C
Ta=25˚C
3.5mA
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
VCE=2V
)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.01 0.1 1 100.03 0.3 3
)
Collector current IC (A
400
350
)
MHz
300
(
T
250
200
150
100
Transition frequency f
50
0
–1 –3 –10 –30 –100
Emitter current IE (A
CE(sat)
Ta=75˚C
25˚C
fT — I
— I
–25˚C
E
C
IC/IB=25
)
VCB=10V
Ta=25˚C
)
Cob — V
24
)
pF
(
20
ob
16
12
8
4
CB
Collector output capacitance C
0
1 3 10 30 100
Collector to base voltage VCB (V
2
IE=0
Ta=25˚C
f=1MHz
)
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