Datasheet 2SD1251A Datasheet (Panasonic)

Po wer Transistors

2SD1251, 2SD1251A

Silicon NPN triple diffusion junction type

For power amplification

Features

■

●

Wide area of safe operation (ASO)

●

N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

10.0±0.310.5min.

2.0 1.5±0.1

8.5±0.2

6.0±0.5

1.5max.

0.8±0.1

3.4±0.3

Unit: mm

1.0±0.1

1.1max.

0.5max.

Absolute Maximum Ratings (T

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SD1251
2SD1251A
2SD1251

2SD1251A
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Electrical Characteristics (T

■

Symbol

V

V

V
I

CP

I

C

I

B

P

C

T

j

T

stg

Parameter

Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage

2SD1251
2SD1251A

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency

*1

h

Rank classification

FE2

CBO

CEO

EBO

C

Symbol

I

CBO

I

EBO

V

CEO(sus)

h

FE1

*1

h

FE2

V

BE

V

CE(sat)

f

T

=25˚C)

C

Ratings

60
80
60
80

8
6
4
1

30

1.3

150

–55 to +150

=25˚C)

*2

VCB = 20V, IE = 0
VEB = 8V, IC = 0

IC = 0.2A, L = 25mH

VCE = 3V, IC = 0.1A
VCE = 3V, IC = 1A
VCE = 3V, IC = 1A
IC = 2A, IB = 0.4A
VCE = 10V, IC = 0.2A, f = 0.5MHz

Rank Q P O

h

FE2

30 to 60 50 to 100 80 to 160

Note: Ordering can be made by the common rank (OP rank h

Unit

V

V

V
A

10.0±0.3

A
A

2.0

4.4±0.5

W

˚C
˚C

Conditions

*2

V

50/60Hz mercury relay

FE2

Test circuit

CEO(sus)

L 25mH

120Ω

6V

1Ω

15V

= 50 to 160) in the rank classification.

5.08±0.5
213

8.5±0.2

6.0±0.3

5.08±0.5

123

min

60
80
40
30

I

C

X

Y
G

2.54±0.3

–0.4

+0

1.5

0.8±0.1

2.54±0.3

typ1max

(A)

0.2

0.1

1:Base
2:Collector
3:Emitter
N Type Package

Unit: mm

3.4±0.3

1.0±0.1

–0.2

+0.4

3.0

R0.5
R0.5

1.1 max.

1:Base
2:Collector
3:Emitter
N Type Package (DS)

4.4±0.5

0 to 0.4

Unit

30

µA

1

mA

V

160

1.2
1

V
V

MHz

60/80 V

14.7±0.5

(V)

CE

1

Po wer Transistors 2SD1251, 2SD1251A

PC—Ta IC—V

50

)
W

(

40

C

(1)

30

20

10

(2)

Collector power dissipation P

(3)

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

30

V

(

10

CE(sat)

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.03 0.1 0.3 1 3

(1) TC=Ta
(2) With a 50 × 50 × 2mm

Al heat sink

(3) Without heat sink

(P

=1.3W)

C

V

CE(sat)—IC

IC/IB=5
T

TC=100˚C

25˚C

Collector current IC (A

=25˚C

C

–25˚C

)

)

CE

2.4

2.0

)

A

(

1..6

C

1.2

0.8

IB=35mA

Collector current I

0.4

0

012108264

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

TC=100˚C

25˚C

300

–25˚C

100

30

10

Forward current transfer ratio h

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

=25˚C

T

C

30mA
25mA

20mA

15mA

10mA

5mA

VCE=3V

)

IC—V

3.2

2.8
TC=100˚C

)

2.4

A

(

C

2.0

1.6

1.2

0.8

Collector current I

0.4

0

02.42.01.60.4 1.20.8

)

Base to emitter voltage VBE (V

Cob—V

10000

)
pF

3000

(

ob

1000

300

100

30

10

3

Collector output capacitance C

1

0.1 1 10 1000.3 3 30

Collector to base voltage VCB (V

25˚C

–25˚C

BE

CB

V

CE

IE=0
f=1MHz
T

=25˚C

C

=3V

)

)

Area of safe operation (ASO) R

100

30

)

10

A

I

(

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

10ms

300ms

Non repetitive pulse

=25˚C

T

C

t=5ms

2SD1251

2SD1251A

Collector to emitter voltage VCE (V

)

3

10

)

2

10

˚C/W

(

(t)

th

10

1

–1

10

Thermal resistance R

–2

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10