Datasheet 2SD1457A, 2SD1457 Datasheet (Panasonic)

Po wer Transistors

2SD1457, 2SD1457A

Silicon NPN triple diffusion planar type Darlington

For power amplification

Features

■

●

High foward current transfer ratio h

●

High collector to base voltage V

●

Full-pack package which can be installed to the heat sink with
one screw

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to
emitter voltage

2SD1457

2SD1457A
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

V

V
I

CP

I

C

P

C

T

j

T

stg

CBO

CEO

EBO

FE

CBO

=25˚C)

C

Ratings

200
150
200

5

10

6

60

3

150

–55 to +150

Unit

V

V

V
A
A

W

˚C
˚C

15.0±0.3

11.0±0.2

21.0±0.516.2±0.5

3.5 0.715.0±0.2

12.5
Solder Dip

10.9±0.5

321

TOP–3 Full Pack Package(a)

Internal Connection

B

φ3.2±0.1

2.0±0.2

1.1±0.1

5.45±0.3

Unit: mm

5.0±0.2

3.2

2.0±0.1

0.6±0.2

1:Base
2:Collector
3:Emitter

C

E

Electrical Characteristics (T

■

Parameter

Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency

*

hFE Rank classification

I
V
V
h
V
V
f

Rank Q P O

h

700 to 2500 2000 to 5000

FE

=25˚C)

C

Symbol

CBO

CEO(sus)

EBO

*

FE

CE(sat)

BE(sat)

T

4000 to 10000

Conditions

VCB = 200V, IE = 0
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
IC = 3A, IB = 0.06A
VCE = 10V, IC = 0.5A, f = 1MHz

min

150

5

700

typ15max

100

10000

1.5

2.5

Unit

µA

V
V

V
V

MHz

1

Po wer Transistors 2SD1457, 2SD1457A

PC—Ta IC—V

100

)
W

(

80

C

60

40

20

Collector power dissipation P

0

0 15012510025 7550

100

)
V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01

0.01 0.1 1 100.03 0.3 3

(1) TC=Ta
(2) With a 100 × 100 × 2mm

Al heat sink

(3) With a 50 × 50 × 2mm

Al heat sink

=3.0W)

(P

(1)

(2)
(3)

C

Ambient temperature Ta (˚C

V

BE(sat)—IC

IC/IB=50

TC=–25˚C

100˚C

Collector current IC (A

25˚C

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

0654132

)

Collector to emitter voltage VCE (V

hFE—I

100000

30000

FE

10000

TC=100˚C

3000

1000

25˚C

300

–25˚C

100

Forward current transfer ratio h

30

10

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

IB=2.0mA

1.8mA

1.6mA

1.4mA

1.2mA

1.0mA

0.8mA

0.6mA

C

TC=25˚C

0.4mA

0.2mA

VCE=2V

)

)

100

V

(

30

CE(sat)

10

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

)

10000

)
pF

3000

(

ob

1000

300

100

30

10

Collector output capacitance C

V

CE(sat)—IC

IC/IB=50

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

Cob—V

3

1

0.1 1 10 1000.3 3 30

TC=100˚C

CB

25˚C

–25˚C

IE=0
f=1MHz
T

=25˚C

C

)

Collector to base voltage VCB (V

)

Area of safe operation (ASO) R

100

30

I

)

CP

10

A

(

I

C

C

3

20ms

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

Non repetitive pulse

=25˚C

T

C

t=1ms

DC

2SD1457

Collector to emitter voltage VCE (V

0.1ms

3ms

2SD1457A

)

3

10

)
˚C/W

2

(

10

(t)

th

10

1

Thermal resistance R

–1

10

–3

10

–2

10

2

—t

th(t)

(1) P

=10V × 0.3A (3W) and without heat sink

T

=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink

(2) P

T

–1

110

Time t (s

10 10

)

2

10

(1)

(2)

3

4

10