Datasheet 2SC5545 Datasheet (HIT)

Silicon NPN Epitaxial

VHF / UHF wide band amplifier

Features

• Excellent inter modulation characteristic

• High power gain and low noise figure ;

PG=16dB typ. , NF=1.1dB typ. at f=900MHz

Outline

MPAK-4

2SC5545

ADE-208-746 (Z)

1st. Edition

Jan. 1999

Note: Marking is “ZS-”.

2

3

1

4

1. Collector

2. Emitter

3. Base

4. Emitter

2SC5545

C

C

C

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I

CBO

CEO

EBO

C

Collector power dissipation Pc 150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Collector to base breakdown

V

(BR)CBO

voltage
Collector cutoff current I
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h

CBO

CEO

EBO

FE

Collector output capacitance Cob — 0.69 1.1 pF V

Gain bandwidth product f

T

Power gain PG 14 16 — dB V

Noise figure NF — 1.1 2.0 dB V

15——V I

——1 µAV
——1 mAV
——10µAV
80 120 160 V VCE = 3V , IC = 20mA

10 12.6 — GHz VCE = 3V , IC = 20mA

15 V
6V

1.5 V
50 mA

= 10µA , IE = 0

C

= 12V , IE = 0

CB

= 6V , RBE = Åá

CE

= 1.5V , IC = 0

EB

= 3V , IE = 0

B

f = 1MHz

= 3V, IC = 20mA

E

f = 900MHz

= 3V, IC = 5mA

E

f = 900MHz

2

Main Characteristics

2SC5545

Maximum Collector Dissipation Curve

200

150

100

50

Collector Power Dissipation Pc (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Collector Output Capacitance vs.

2.0

1.6

Collector to Base Voltage

I = 0

E

f = 1MHz

DC Current Transfer Ratio vs.

200

FE

Collector Current

100

DC Current Transfer Ratio h

0

10

25

1

20

Collector Current I (mA)

Gain Bandwidth Product vs.

20

Collector Current

16

T

V = 3 V

CE

50

C

V = 3 V

CE

100

1.2

0.8

0.4

0

0.2 0.5 2

0.1 1 10

Collector Output Capacitance Cob (pF)

Collector to Base Voltage V (V)

5

CB

12

8

4

0

Gain Bandwidth Product f (GHz)

12 5

Collector Current I (mA)

10 20

C

50 100

3

2SC5545

Power Gain vs. Collector Current

20

16

12

8

4

Power Gain PG (dB)

0

2

1

5

Collector Current I (mA)

S Parameter vs. Collector Current

21

20

V = 3 V

CE

16

f = 1GHz

V = 3 V

CE

f = 900MHz

20

10 50 100

C

Noise Figure vs. Collector Current

5

4

3

2

1

Noise Figure NF (dB)

0

25

1

Collector Current I (mA)

10

V = 3 V

CE

f = 900MHz

20

50

C

100

2

21

12

8

4

21

S parameter |S | (dB)

0

25 20

1 10 100

Collector Current I (mA)

50

C

4

2SC5545

180°

S11 Parameter vs. Frequency

.8

.6

.4

.2

0

–.2

.2

–.4

Condition :

.6

.4

.8

–.6

–.8

–1

V = 3 V , I = 20 mA

CE

100 to 2000 MHz (100 MHz step)

S12 Parameter vs. Frequency S22 Parameter vs. Frequency

120°

150°

–150°

–120°

Condition :

100 to 2000 MHz (100 MHz step)

–90°

V = 3 V , I = 20 mA

CE

1

90°

1.5

1

1.5
2

3

4

234

–1.5

C

10

5

–4

–3

–2

Scale: 0.04 / div.

60°

30°

–30°

–60°

C

5

–5

10

–10

0°

180°

S21 Parameter vs. Frequency

90°

120°

150°

–150°

–120°

Condition :

100 to 2000 MHz (100 MHz step)

.6

.4

.2

0

–.2

.2

–.4

–.6

Condition :

100 to 2000 MHz (100 MHz step)

–90°

V = 3 V , I = 20 mA

CE

1

.8

.6

.4

.8

–.8

–1

V = 3 V , I = 20 mA

CE

1.5

1

Scale: 10 / div.

60°

–60°

C

1.5
2

3

234

–1.5

C

10

5

–3

–2

30°

–30°

4

–4

0°

5

10

–10

–5

5

2SC5545

Sparameter (VCE = 3V, IC = 20mA, Zo = 50Ω)

S11 S21 S12 S22
f (MHz) MAG ANG MAG ANG MAG ANG MAG ANG
100 0.567 –60.8 34.04 146.8 0.0207 67.3 0.817 –37.3
200 0.539 –102.7 24.61 125.5 0.0329 54.3 0.605 –63.5
300 0.528 –128.1 18.16 113.2 0.0399 50.6 0.463 –80.5
400 0.525 –143.2 14.26 105.5 0.0447 50.3 0.379 –92.4
500 0.518 –153.6 11.65 100.2 0.0495 51.6 0.327 –101.8
600 0.526 –161.2 9.82 96.4 0.0545 53.3 0.293 –109.6
700 0.526 –167.9 8.48 92.9 0.0594 54.8 0.269 –116.2
800 0.528 –172.8 7.46 90.0 0.0639 56.1 0.253 –121.9
900 0.532 –178.3 6.63 87.4 0.0698 57.7 0.242 –127.0
1000 0.535 178.2 6.00 85.1 0.0741 58.7 0.235 –131.2
1100 0.536 174.2 5.48 82.9 0.0801 59.5 0.229 –135.1
1200 0.549 170.6 5.04 81.0 0.0851 60.6 0.225 –139.1
1300 0.546 167.6 4.67 79.1 0.0901 60.9 0.223 –142.0
1400 0.547 165.4 4.34 77.4 0.0961 61.5 0.222 –144.7
1500 0.552 162.4 4.09 75.7 0.102 62.1 0.222 –147.2
1600 0.562 159.4 3.82 74.0 0.106 62.3 0.223 –149.7
1700 0.561 157.3 3.62 72.5 0.113 62.5 0.224 –152.3
1800 0.563 154.8 3.43 70.7 0.118 62.9 0.227 –154.3
1900 0.573 152.5 3.26 69.2 0.124 62.3 0.229 –155.8
2000 0.577 150.0 3.13 67.8 0.130 63.0 0.232 –157.6

6

Package Dimensions

2.8

1.9

0.95 0.95

3

0.4

+ 0.1
– 0.05

+ 0.3
– 0.1

2SC5545

Unit: mm

+ 0.1

– 0.3

+ 0.1

0.4

– 0.05

0.65

2

0.16

+ 0.1
– 0.06

0.4

+ 0.1
– 0.05

+ 0.2

– 0.6

1.5

2.8

4

0.95

1

0.85

0.6

+ 0.1
– 0.05

+ 0.1

– 0.3

0.65

0 – 0.1

1.8

0.3

+ 0.2

– 0.1

1.1

Hitachi Code

EIAJ

JEDEC

MPAK–4

SC–61AA

—

7

2SC5545

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

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Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan.

8

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