Page 1
2SC5252
Silicon NPN Triple Diffused Planar
Application
Character display horizontal deflection output
Features
High breakdown voltage
•
V
= 1500 V
CBO
High speed switching
•
t
≤ 0.15 µsec(typ.)
f
Isolated package
•
TO–3P•FM
ADE-208-391A (Z)
2nd. Edition
Outline
TO-3PFM
1. Base
2. Collector
3. Emitter
1
2
3
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2SC5252
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector peak current I
C
C(peak)
Collector power dissipation PC*
CBO
CEO
EBO
1
1500 V
800 V
6V
15 A
30 A
50 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CEO
800 — — V IC = 10 mA, RBE = ∞
voltage
Emitter to base breakdown
V
(BR)EBO
6——VI
= 10 mA, IC = 0
E
voltage
Collector cutoff current I
DC current transfer ratio h
DC current transfer ratio h
Collector to emitter saturation
V
CES
FE1
FE2
CE(sat)
— — 500 µA VCE = 1500 V, RBE = 0
8—35 V
3—6 V
——5VI
= 5 V, IC = 1 A
CE
= 5 V, IC = 8 A
CE
= 10 A, IB = 3 A
C
voltage
Base to emitter saturation
V
BE(sat)
— — 1.5 V IC = 10 A, IB = 3 A
voltage
Fall time t
f
— 0.15 0.3 µsec ICP = 7 A, IB1 = 2 A, fH = 31.5 kHz
2
Page 3
Collector Power Dissipation
80
60
40
20
Collector Power Dissipation Pc (W)
0
vs. Case Temperature
50 100 150 200
Case Temperature Tc (°C)
2SC5252
50
40
C
30
20
10
Collector Current I (A)
0
Collector to Emitter Voltage V (V)
Areaof Safe Operaion
I = –1 A
L = 180 µH
duty < 1 %
(400 V, 30 A)
(600 V, 8 A)
(800 V, 4 A)
400 800 1200 1600
Tc = 25°C
(1500 V, 0.5 mA)
B1
2000
CE
3
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2SC5252
10
Typical Output Characteristics
Tc = 25 °C
Pulse Test
C
5
2.0 A
1.8 A
1.6 A
1.4 A
1.2 A
1.0 A
0.8 A
0.6 A
0.4 A
Collector Current I (A)
I = 0
B
0
510
Collector to Emitter Voltage V (V)
DC Current Transfer Ratio vs.
Collector Current
100
FE
50
75°C
25°C
20
0.2 A
CE
10
Tc = –25°C
5
2
V = 5 V
1
CE
Pulse Test
DC Current Transfer Ratio h
0.1 0.2 0.5 1 2 5 10
Collector Current I (A)
C
20
4
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Collector to Emitter Saturation Voltage
10
I / I = 3
5
Pulse Test
CE(sat)
2
V (V)
1
0.5
0.2
0.1
Collector to Emitter Saturation Voltage
0.05
0.1 0.2 0.5 1 2 5 20
vs. Collector Current
C B
75 °C
25 °C
Collector Current I (A)
Tc = –25 °C
C
Base to Emitter Saturation Voltage
vs. Collector Current
10
I / I = 3
C B
5
Pulse Test
2SC5252
10
2
Tc = –25 °C
25 °C
BE(sat)
V (V)
1
0.5
75 °C
0.2
Base to Emitter Saturation Voltage
0.1
0.1 0.2 0.5 1 2 5 10
Collector Current I (A)
20
C
5
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2SC5252
Collector to Emitter Saturation Voltage
10
Tc = 25°C
Pulse Test
8
CE(sat)
V (V)
6
4
2
0
Collector to Emitter Saturation Voltage
0.1 0.2 0.5 1 2 5 10
1.0
0.8
0.6
f
vs. Base Current
I = 6 A
C
8 A
10 A
12 A
Base Current I (A)
Fall Time vs. Base Current
B
Icp = 7 A
f = 31.5 kHz
H
Tc = 25°C
0.4
Fall Time t (µs)
0.2
0
0.8 1.6 2.4 3.2 4.0
Base Current I (A)
B1
6
Page 7
2SC5252
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
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7
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