Page 1
2SC5247
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product
fT = 13.5 GHz typ
• High gain, low noise figure
PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz
ADE-208-281
1st. Edition
Outline
SMPAK
3
1
2
1. Emitter
2. Base
3. Collector
Page 2
2SC5247
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: Marking is “ZD–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V
(BR)CBO
voltage
Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio h
CBO
I
CEO
EBO
FE
Collector output capacitance Cob — 0.47 0.75 pF VCB = 5 V, IE = 0,
Gain bandwidth product f
T
Power gain PG 14 17 — dB VCE = 4 V, IC = 20 mA,
Noise figure NF — 1.2 2.5 dB VCE = 4 V, IC = 5 mA,
15——V I
——1 µAVCB = 12 V, IE = 0
——1 mAV
——10µAVEB = 1.5 V, IC = 0
50 100 160 VCE = 4 V, IC = 20 mA
10.5 13.5 — GHz VCE = 4 V, IC = 20 mA
15 V
8V
1.5 V
50 mA
80 mW
= 10 µA, IE = 0
C
= 8 V, RBE = ∞
CE
f = 1 MHz
f = 900 MHz
f = 900 MHz
2
Page 3
Collector Power Dissipation Curve
160
120
80
200
FE
160
120
2SC5247
DC Current Transfer Ratio vs.
Collector Current
80
40
Collector Power Dissipation Pc (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
CE
T
20
V = 4V
16
12
8
4
Gain Bandwidth Product f (GHz)
0
1
251020 50 100
Collector Current I (mA)
C
40
V = 4 V
0
0.01
CE
Pulse Test
0.1
1 10 100
Collector Current I (mA)
C
DC Current Transfer Ratio h
Collector Output Capacitance vs.
1.0
0.8
Collector to Base Voltage
I = 0
E
f = 1 MHz
0.6
0.4
0.2
Collector Output Capacitance Cob (pF)
0
0.1 0.2 0.5 1 2 5 10 20
Collector to Base Voltage V (V)
CB
3
Page 4
2SC5247
Power Gain vs. Collector Current
20
f = 900 MHz
V = 4V
16
V = 1V
12
CE
8
Power Gain PG (dB)
4
0
0.1 0.2 0.5 1 2 5 10 20
Collector Current I (mA)
C
CE
50
Noise Figure vs. Collector Current
10
f = 900 MHz
8
6
V = 1V
4
Noise Figure NF (dB)
2
CE
0
0.1 0.2 0.5 1 2 5 10 20
Collector Current I (mA)
C
V = 4V
CE
50
4
Page 5
2SC5247
S11 Parameter vs. Frequency
.8
.6
.4
.2
–.6
.6
.4
.8
–.8
–1
CE
0
–.2
.2
–.4
Condition: V = 4 V , Zo = 50
200 to 2000 MHz (200 MHz step)
S12 Parameter vs. Frequency
120°
150°
180°
–150°
–120°
Condition: V = 4 V , Zo = 50
200 to 2000 MHz (200 MHz step)
1
–90°
CE
1.5
1.5
1.0
234
–1.5
(I = 5 mA)
C
(I = 20 mA)
C
Scale: 0.04 / div.
90°
(I = 5 mA)
C
(I = 20 mA)
C
60°
–60°
S21 Parameter vs. Frequency
Scale: 5 / div.
90°
2
3
4
5
10
10
5
–10
–5
–4
–3
–2
150°
180°
–150°
Ω
120°
–120°
Condition: V = 4 V , Zo = 50
–90°
CE
60°
30°
0°
–30°
–60°
Ω
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 20 mA)
C
S22 Parameter vs. Frequency
1
.8
.6
.4
30°
0°
–30°
Ω
.2
–.6
.6
.4
–.8
0
–.2
.2
–.4
Condition: V = 4 V , Zo = 50
.8
–1
CE
200 to 2000 MHz (200 MHz step)
1.5
1.5
1.0
234
–1.5
(I = 5 mA)
C
(I = 20 mA)
C
2
3
4
5
10
10
5
–10
–5
–4
–3
–2
Ω
5
Page 6
2SC5247
S11 Parameter vs. Frequency
.8
.6
.4
.2
–.6
.6
.4
–.8
.8
–1
CE
0
–.2
.2
–.4
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
S12 Parameter vs. Frequency
120°
150°
180°
–150°
–120°
Condition: V = 1 V , Zo = 50
200 to 2000 MHz (200 MHz step)
1
–90°
CE
1.5
1.5
1.0
234
–1.5
(I = 5 mA)
C
(I = 20 mA)
C
Scale: 0.04 / div.
90°
(I = 5 mA)
C
(I = 20 mA)
C
60°
–60°
S21 Parameter vs. Frequency
Scale: 5 / div.
90°
2
3
4
5
10
10
5
–10
–5
–4
–3
–2
150°
180°
–150°
Ω
120°
–120°
Condition: V = 1 V , Zo = 50
–90°
CE
60°
30°
0°
–30°
–60°
Ω
200 to 2000 MHz (200 MHz step)
(I = 5 mA)
C
(I = 20 mA)
C
S22 Parameter vs. Frequency
1
.8
.6
.4
30°
0°
–30°
Ω
.2
–.6
.6
.4
–.8
0
–.2
.2
–.4
Condition: V = 1 V , Zo = 50
.8
–1
CE
200 to 2000 MHz (200 MHz step)
1.5
1.5
1.0
234
–1.5
(I = 5 mA)
C
(I = 20 mA)
C
2
3
4
5
10
10
5
–10
–5
–4
–3
–2
Ω
6
Page 7
2SC5247
S Parameter (VCE = 4 V, IC = 5 mA, ZO = 50 Ω)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.785 –33.8 11.8 153 0.037 72.5 0.905 –20.6
400 0.650 –59.8 9.73 134 0.061 61.4 0.758 –34.2
600 0.537 –79.7 7.85 120 0.077 56.3 0.632 –42.5
800 0.450 –96.7 6.54 111 0.087 54.6 0.540 –47.4
1000 0.400 –112 5.43 103 0.097 54.8 0.477 –49.5
1200 0.354 –122 4.67 96.7 0.105 55.3 0.434 –51.2
1400 0.317 –134 4.09 92.1 0.114 56.6 0.403 –52.3
1600 0.308 –145 3.64 87.6 0.123 58.0 0.382 –53.4
1800 0.283 –154 3.32 83.6 0.133 59.0 0.363 –54.7
2000 0.279 –163 3.02 79.8 0.142 60.3 0.348 –55.6
S Parameter (VCE = 4 V, IC = 20 mA, ZO = 50 Ω)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.510 –60.9 21.4 137 0.029 67.3 0.747 –33.8
400 0.376 –96.0 14.3 116 0.044 63.5 0.527 –45.5
600 0.310 –120 10.4 106 0.056 64.8 0.411 –48.7
800 0.278 –137 8.05 98.5 0.069 66.9 0.347 –49.7
1000 0.266 –151 6.56 92.9 0.082 68.5 0.310 –49.1
1200 0.251 –162 5.54 88.6 0.095 69.4 0.287 –49.1
1400 0.252 –172 4.81 85.3 0.108 70.7 0.272 –48.8
1600 0.253 178 4.25 81.8 0.122 70.8 0.261 –49.2
1800 0.252 173 3.83 78.6 0.135 70.9 0.255 –49.8
2000 0.253 165 3.48 75.8 0.148 71.3 0.248 –50.6
7
Page 8
2SC5247
S Parameter (VCE = 1 V, IC = 5 mA, ZO = 50 Ω)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.763 –39.3 11.6 151 0.046 69.6 0.879 –25.4
400 0.627 –68.8 9.27 130 0.073 58.4 0.708 –42.0
600 0.517 –90.9 7.33 117 0.089 53.2 0.570 –51.8
800 0.448 –108 5.94 107 0.101 51.6 0.475 –57.9
1000 0.408 –124 4.98 99.6 0.111 51.7 0.409 –61.7
1200 0.375 –137 4.28 94.3 0.121 52.4 0.365 –64.5
1400 0.351 –147 3.73 89.2 0.130 53.4 0.333 –66.0
1600 0.333 –157 3.32 84.9 0.141 54.6 0.311 –67.9
1800 0.326 –166 3.02 81.3 0.152 56.0 0.290 –69.8
2000 0.325 –174 2.76 77.3 0.161 57.6 0.275 –71.1
S Parameter (VCE = 1 V, IC = 10 mA, ZO = 50 Ω)
Freq. S11 S21 S12 S22
(MHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
200 0.484 –81.3 18.7 131 0.036 62.6 0.651 –43.8
400 0.404 –120 12.0 111 0.052 59.5 0.425 –60.0
600 0.378 –142 8.49 101 0.066 61.6 0.315 –66.5
800 0.367 –157 6.54 94.6 0.080 64.1 0.254 –70.3
1000 0.370 –168 5.31 89.4 0.094 65.6 0.219 –71.6
1200 0.365 –176 4.50 85.2 0.109 67.1 0.195 –73.3
1400 0.363 177 3.92 81.8 0.124 68.0 0.180 –74.1
1600 0.373 170 3.46 78.3 0.139 68.3 0.170 –75.9
1800 0.367 164 3.13 75.4 0.155 68.5 0.162 –77.6
2000 0.372 158 2.84 72.2 0.170 68.9 0.156 –78.4
8
Page 9
4.2 Max
3.2 Max
1.8 Max
2.2 Max
Unit: mm
0.6 Max
0.45 ± 0.1
1.27 1.27
2.54
0.6
14.5 Min
Hitachi Code
JEDEC
EIAJ
Weight
0.4 ± 0.1
(reference value)
SPAK
—
—
0.10 g
Page 10
Cautions
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received the latest product standards or specifications before final design, purchase or use.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
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failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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products.
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