Page 1
SHINDENGEN
Switching Power Transistor
2SC5241
5A NPN
RATINGS
●Absolute Maximum Ratings
Item Symbol
Storage Temperature
Junction Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current DC
Collector Current Peak
Base Current DC
Base Current Peak
Total Transistor Dissipation
Dielectric Strength
Mounting Torque
FX Series
OUTLINE DIMENSIONS
Case : FTO-220
Unit : mm
Conditions
Tstg -55～150 ℃
Tj 150 ℃
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
CP
I
B
I
BP
P
T
Vdis
TOR
VEB = 5V
Terminals to case, AC 1 minute
(Recommended torque)
Ratings Unit
600 V
450 V
600
7V
5A
10
2
4
30
2
0.5(0.3)
kV
N･m
A
W
●Electrical Characteristics (Tc=25℃)
Item Symbol
Collector to Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Saturation Voltage
Thermal Resistance
Transition Frequency
Turn on Time
Storage Time
Fall Time
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
V
(sus)
CEO
I
CBO
I
CEO
I
EBO
h
FE
h
FEL
VCE(sat)
VBE(sat)
θjc
f
T
ton
ts
tf
IC = 0.1A
rated V
CBO
rated V
CEO
rated V
EBO
V
= 5V, IC = 2.5A
CE
V
= 5V, IC = 1mA
CE
IC = 2.5A
IB = 0.5A
Junction to case
V
= 10V, IC = 0.5A
CE
IC = 2.5A
IB1 = 0.5A, IB2 = 1A
RL = 60Ω, V
BB2
= 4V
Conditions
Ratings Unit
Min 450 V
Max 0.1 mA
Max 0.1
Max 0.1 mA
Min 10
Min 5
Max 1.0 V
Max 1.5 V
Max 4.16 ℃/W
STD 20 MHz
Max 0.5
Max 2.0 μs
Max 0.2
Page 2
C
- I
FE
h
= 5V
CE
V
[A]
C
2SC5241
Tc = 150°C
100
100°C
50°C
FE
25°C
0°C
−25°C
10
−55°C
DC Current Gain h
Collector Current I
1
0.001 0.01 0.1 1 10
Page 3
BE
[V]
Base-Emitter Voltage V
3
2.5
Saturation Voltage
2
1.5
10A
1
5A
0.5
0
4
[A]
B
2SC5241
1.25A 2.5A 5A 10A
=
C
I
0.5A
3
2.5
CE
[V]
2.5A
Base Current I
1.25A
= 0.5A
C
I
2
1.5
1
0.5
Tc = 25°C
0.01 0.1 1
0
Collector-Emitter Voltage V
Page 4
[µs]
SW
2SC5241
t
s
1
Switching Time - I
C
0.1
Switching Time t
0.01
0 1 2 3 4 5
t
on
t
f
Collector Current IC [A]
IB1 = 0.2I
IB2 = 0.4I
V
BB2
VCC = 150V
Tc = 25°C
C
C
= 4V
Page 5
[µs]
SW
2SC5241
1
Switching Time - V
t
s
t
on
CC
0.1
Switching Time t
0.01
0 50 100 150 200 250 300
t
f
IC = 2.5A
IB1 = 0.5A
IB2 = 1.0A
V
Tc = 25°C
Collector Voltage VCC [V]
BB2
= 4V
Page 6
2SC5241
1
Switching Time - Tc
t
s
[µs]
SW
0.1
Switching Time t
t
on
t
f
IC = 2.5A
IB1 = 0.5A
IB2 = 1.0A
V
= 4V
BB2
R
= 60Ω
L
0.01
0 50 100 150
Case Temperature Tc [°C]
Page 7
[µs]
SW
2SC5241
L-Load Switching Time - I
t
s
C
1
0.1
Switching Time t
0.01
0 1 2 3 4 5
IB1 = 0.2I
IB2 = 0.4I
V
BB2
V
CE (clamp)
Tc = 25°C
Collector Current IC [A]
tf + t
t
= 4V
vs
f
C
C
= 300V
Page 8
2SC5241
1
[µs]
SW
L-Load Switching Time - IC (At High Temperature)
t
s
0.1
Switching Time t
0.01
0 1 2 3 4 5
tf + t
IB1 = 0.2I
IB2 = 0.4I
V
BB2
V
CE (clamp)
Tc = 100°C
Collector Current IC [A]
vs
t
f
= 4V
C
C
= 300V
Page 9
2
10
1
10
0
10
-1
10
Transient Thermal Impedance
2SC5241
10
1
0.1
Time t [s]
-2
10
-3
10
-4
10
0.01
Transient Thermal Impedance θjc(t) [°C/W]
Page 10
10
[A]
C
2SC5241
10ms
DC
PT limit
1
Forward Bias SOA
1ms
150µs
50µs
Collector Current I
0.1
Tc = 25°C
Single Pulse
0.01
1 10 100
Collector-Emitter Voltage VCE [V]
I
S/B
limit
450
Page 11
2SC5241 Collector Current Derating
100
80
60
40
Collector Current Derating [%]
20
PT limit
I
S/B
limit
VCE = fixed
0
0 50 100 150
Case Temperature Tc [°C]
Page 12
10
[A]
C
2SC5241
8
6
Reverse Bias SOA
4
Collector Current I
2
IB1 = 0.3I
IB2 = 1.5A
V
BB2
Tc < 150°C
0
0 100 200 300 400 500 600
C
= 5V
Collector-Emitter Voltage VCE [V]
Loading...