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SILICON POWER TRANSISTOR
DATA SHEET
The 2SC2334 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SA1010
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
2SC2334
ORDERING INFORMATION
Part No. Package
2SC2334 TO-220AB
(TO-220AB)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO 150 V
Collector to emitter voltage VCEO 100 V
Emitter to base voltage VEBO 7.0 V
Collector current (DC) IC(DC) 7.0 A
Collector current (pulse) IC(pulse) PW ≤ 300 µs,
duty cycle ≤ 10%
Base current (DC) IB(DC) 3.5 A
TC = 25°C 40 W Total power dissipation PT
T
A = 25°C 1.5 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
15 A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14902EJ2V1DS00 (2nd edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2002
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2SC2334
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage
Collector cutoff current
Emitter cutoff current IEBO VEB = 5.0 V, IC = 0 A 10
DC current gain
Collector saturation voltage VCE(sat) IC = 5.0 A, IB = 0.5 A
Base saturation voltage VBE(sat) IC = 5.0 A, IB = 0.5 A
Turn-on time ton 0.5
Storage time tstg 1.5
Fall time tf
Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
VCEO(SUS) IC = 5.0 A, IB1 = 0.5 A, L = 1 mH 100 V
VCEX(SUS)1 IC = 5.0 A, IB1 = −IB2 = 0.5 A,
BE(OFF) = −5.0 V, L = 180
V
V
CEX(SUS)2 IC = 10 A, IB1 = 1.0 A, IB2 = −0.5 A,
BE(OFF) = −5.0 V, L = 180
V
µ
H, clamped
µ
H, clamped
ICBO VCB = 100 V, IE = 0 A 10
100 V
100 V
µ
A
ICER VCE = 100 V, RBE = 51 Ω, TA = 125°C 1.0 mA
ICEX1 VCE = 100 V, VBE(OFF) = −1.5 V 10
I
CEX2 VCE = 100 V, VBE(OFF) = −1.5 V,
A = 125°C
T
hFE1 VCE = 5.0 V, IC = 0.5 A
hFE2 VCE = 5.0 V, IC = 3.0 A
h
FE3 VCE = 5.0 V, IC = 5.0 A
C = 5.0 A, RL = 10 Ω,
I
B1 = −IB2 = −0.5 A, VCC ≅ 50 V
I
Note
40
Note
40 200
Note
20
Note
0.6 V
Note
1.5 V
Refer to the test circuit.
1.0 mA
0.5
µ
A
µ
A
µ
s
µ
s
µ
s
Marking M L K
hFE2 40 to 80 60 to 120 100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D14902EJ2V1DS
Page 3
)
TYPICAL CHARACTERISTICS (TA = 25°C)
2 mm aluminum board,
no insulating board,
(W)
T
Total Power Dissipation P
grease coating, natural
air cooling
With infinite heatsink
2SC2334
Derating dT (%)
Ambient Temperature TA (°C)
(A)
C
Case Temperature TC (°C)
Collector Current I
Single pulse
Collector to Emitter Voltage VCE (V)
C/W)
°
(
th(j-c)
Transient Thermal Resistance r
Pulse Width PW (ms
Data Sheet D14902EJ2V1DS
3
Page 4
2SC2334
(
µ
)
(A)
(A)
C
C
Collector Current I
Collector to Emitter Voltage VCE (V)
FE
DC Current Gain h
Collector Current IC (A)
Pulse test
Collector Current I
Collector to Emitter Voltage VCE (V)
(V)
(V)
CE(sat )
BE(sat)
Pulse test
Base Saturation Voltage V
Collector Saturation Voltage V
Collector Current IC (A)
s)
s)
µ
µ
s
(
(
on
stg
f
Fall Time t
StorageTime t
Turn-On Time t
Collector Current IC (A)
4
Data Sheet D14902EJ2V1DS
Page 5
PACKAGE DRAWING (UNIT: mm)
1. Base
2. Collector
3. Emitter
4. Fin (collector)
2SC2334
Data Sheet D14902EJ2V1DS
5
Page 6
•
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2SC2334
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M8E 02. 11-1
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