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2SC2411K
Transistors
Medium Power Transistor (32V, 0.5A)
2SC2411K
zFeatures
1) High I
2) Low V
CMax.
I
CMax. = 0.5A
CE(sat).
Optimal for low voltage operation.
3) Complements the 2SA1036K.
zStructure
Epitaxial planar type
NPN silicon transistor
zAbsolute maximum ratings (Ta = 25°C)
zExternal dimensions (Units : mm)
2SC2411K
(1)
ROHM : SMT3
EIAJ : SC-59
∗ Denotes h
2.9±0.2
1.9±0.2
0.95
0.95
(2)
−0.1
+0.2
2.8±0.2
1.6
(3)
All terminals have same dimensions
+0.1
0.4
−0.05
Abbreviated symbol : C∗
FE
1.1
0.8±0.1
+0.1
0.15
−0.06
(1) Emitter
(2) Base
(3) Collector
+0.2
−0.1
0 ∼ 0.1
0.3 ~ 0.6
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
PC must not be exceeded.
*
Symbol Limits Unit
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
40 V
32
5
0.5
0.2
150
−55 to +150
V
V
A
W
°C
°C
*
Rev.A 1/3
Page 2
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
BV
BV
BV
I
I
V
Transition frequency
Output capacitance
Cob
zPackaging Specifications and h
Package
Code
FE
h
Type
2SC2411K
Basic ordering unit (pieces)
QR
FE
h
FE values are classified as follows:
CBO
CEO
EBO
CBO
EBO
h
FE
CE (sat)
f
T
Min.
Typ. Max. Unit Conditions
40
32
5
−
−
120
−
−
−
−
−
−
−
−
−
−
250
6.5
−
−
−
1
1
390
0.6
−
−
MHz
C
VI
V
C
I
V
E
I
µA
µA
pF
CB
V
EB
V
CE
V
−
I
C/IB
V
CE
V
CB
V
= 100µA
= 1mA
= 100µA
= 20V
= 4V
= 3V, IC = 100mA
= 500mA/50mA
= 5V, IE = −20mA, f = 100MHz
= 10V, IE = 0A, f = 1MHz
Taping
T146
3000
2SC2411K
Item Q R
FE
h
120 to 270 180 to 390
zElectrical characteristic curves
1000
V
CE
=6V
500
200
mA)
(
C
100
Ta=100
50
20
10
5
2
1
0.5
COLLECTOR CURRENT : I
0.2
0.1
BASE TO EMITTER VOLTAGE : V
°C
80
°C
25
°C
−25
°C
−55
°C
0.80.2 0.4 0.90.70.5 1.10.3 1.00.6
BE
(
Fig.1 Grounded emitter propagation
characteristics
V)
100
Ta=25
°C
mA)
(
C
50
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
0.50mA
10 2345
Fig.2 Grounded emitter output
characteristics ( Ι )
0.45mA
I
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
B
=
0A
1
V)
(
Ta
=
25
°C
Ta
lC/l
B
=
10
CE(sat)
0.5
0.2
0.1
0.05
0.02
0.5 1 2 5 10 20 50 100 1000200 500
COLLECTOR SATURATION VOLTAGE : V
CE
(
V)
COLLECTOR CURRENT : I
Fig.4 Collector-emitter saturation voltage
vs. collector current
C
(
mA)
Rev.A 2/3
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Transistors
1
V)
(
Ta
Ta
lC/l
CE(sat)
0.5
0.2
0.1
0.05
0.02
0.5 1 2 5 10 20 50 100 1000200 500
COLLECTOR SATURATION VOLTAGE : V
=
25
°C
B
=
10
COLLECTOR CURRENT : I
C
(
mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
pF)
(
pF)
(
50
Cib
20
Ta
=
f=1MHz
I
E
0A
=
I
C
0A
=
1000
500
FE
200
100
DC CURRENT GAIN : h
Fig.5 DC current gain vs. collector current
25°C
°C
100
=
Ta
°C
75
C
°
50
°C
25
°C
0
C
°
50
−25
°C
50
−
20
10
COLLECTOR CURRENT : I
2SC2411K
CE=
mA)
3V
MHz)
(
T
200
100
50
TRANSITION FREQUENCY : f
50010000.1 200100.2 50 1000.5 2012 5
−0.5 −1 −2 −5 −10 −20 −50
EMITTER CURRENT : I
E
(
mA)
Ta=25
V
V
C
(
500
Fig. 6 Gain bandwidth product vs.
emitter current
°C
5V
CE
=
10
5
2
COLLECTOR OUTPUT CAPACITANCE : Cob
EMITTER INPUT CAPACITANCE : Cib
0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : V
EMITTER TO BASE VOLTAGE : V
Cob
CB
(
EB
(
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
V)
V)
Rev.A 3/3
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Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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