Page 1
DATA SHEET
2SC2148, 2SC2149
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2148, 2SC2149 are economical microwave transistors
encapsulated into new hermetic stripline packages, "micro X".
These are designed for small signal amplifier, low noise amplifier,
and oscillator applications in the L to C band, and CML circuit use.
SILICON TRANSISTORS
PACKAGE DIMENSIONS
(Unit : mm)
1
FEATURES
2SC2148 NF: 2.1 dB TYP. @f = 500 MHz
2SC2149 NF: 2.6 dB TYP. @f = 2.0 GHz
4.0 MIN.
2
4.0 MIN.
1.
2.
3.
4.
3
2.55±0.2
2.1
φ
Emitter
Collector
Emitter
Base
4.0 MIN.
4.0 MIN.
0.5±0.05
45°
4
0.55
+0.06
−0.03
0.1
0.5±0.05
1.8 MAX.
Derating curves of the 2SC2148, 2SC2149.
The maximum junction temperature of these transistors is allowed up to 200 °C, but the ambient or storage
temperature is limitted to 150 °C. The operating junction temperature is estimated with power consumption (PT) and
thermal resistance mentioned on these derating curves.
The information in this document is subject to change without notice.
Document No. P11809EJ2V0DS00 (2nd edition)
(Previous No. TC-1428)
Date Published August 1996 P
Printed in Japan
©
1981
Page 2
2SC2148
500
400
300
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
th(j-c)
with infinite heat sink; R
130 °C/W
mounting on ceramic boad with solder
(Al
2O3
20 × 50 × 0.635 mm)
; R
th(j-a)
190 °C/W
2SC2148, 2SC2149
200
100
−Total Power Dissipation−mW
T
0
P
2SC2149
600
400
200
−Total Power Dissipation−mW
T
P
0
50
100
150 200
48
TA−Ambient Temperature−°C
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
50 100 110 140150 200
TA−Ambient Temperature−°C
free-air; R
with infinite heat sink; R
th(j-a)
610 °C/W
th(j-c)
120 °C/W
mounting on ceramic boad with solder
(Al
2O3
20 × 50 × 0.635 mm)
th(j-a)
180 °C/W
; R
free-air; R
th(j-a)
600 °C/W
2
Page 3
2SC2148, 2SC2149
2SC2148
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 30 V
Collector to Emitter Voltage VCEO 14 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current I
Total Power Dissipation PT(TA = 48 °C) 250 mW
Total Power Dissipation PT(Tc = 150 °C) 250 mW
Junction Temperature T
Storage Temperature Tstg −65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 0.1
Emitter Cutoff Current IEBO 0.1
DC Current Gain hFE 30 80 200 VCE = 10 V, IC = 10 mA
Gain Bandwidth Product fT 3.0 GHz VCE = 10 V, IC = 10 mA
Output Capacitance * Cob 0.55 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Gain S21e
Noise Figure NF 2.1 3.5 dB VCE = 10 V, IC = 3.0 mA, f = 500 MHz
Maximum Available Gain MAG 13.3 dB VCE = 10 V, IC = 10 mA, f = 1.0 GHz
C 50 mA
j 200 °C
2
7.5 9.3 dB VCE = 10 V, IC = 10 mA, f = 1.0 GHz
µ
AVCB = 15 V, IE = 0
µ
AVEB = 2.0 V, IC = 0
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (TA = 25 °C)
DC CURRENT GAIN vs.
200
100
50
−DC Current Gain
FE
h
20
10
0.5 1 5
COLLECTOR CURRENT
C
−Collector Current−mA
I
CE
= 10 V
V
10 50
−Collector Current−mA
C
I
50
10
5
1
0.5
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 10 V
0.5 0.6 0.7 0.8 0.9
VBE−Base to Emitter Voltage−V
3
Page 4
2SC2148, 2SC2149
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
5
3
1
0.5
0.3
−Gain Bandwidth Product−GHz
T
f
0.1
0.5 1 5 10 50
VCE = 10 V
IC−Collector Current−mA
COLLECTOR AND EMITTER CAPACITANCE vs.
REVERSE VOLTAGE
3
f = 1.0 MHz
2
−Collector Capacitance−pF
ob
C
−Emitter Capacitance−pF
ib
C
1
C
0.5
C
ib
ob
INSERTION GAIN vs.
15
COLLECTOR CURRENT
CE
V
= 10 V
f = 1.0 GHz
10
−Insertion Gain−dB
2
5
21e
S
0
0.5 1 5 10 50
IC−Collector Current−mA
NOISE FIGURE vs.
COLLECTOR CURRENT
CE
V
f = 500 MHz
untuned (50 Ω)
tuned
= 10 V
NF−Noise Figure−dB
7
6
5
4
3
2
1
0.3
0 0.5 1 2 5 10 20 30
VCB−Collector to Base Voltage−V
V
EB
−Emitter to Base Voltage−V
0
0.5 1 5 10 50
IC−Collector Current−mA
4
Page 5
2SC2148, 2SC2149
2SC2149
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage VCBO 25 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current I
Total Power Dissipation PT(TA = 25 °C) 290 mW
Total Power Dissipation PT(Tc = 140 °C) 500 mW
Junction Temperature T
Storage Temperature Tstg −65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Collector Cutoff Current ICBO 0.1
Emitter Cutoff Current IEBO 0.1
DC Current Gain hFE 30 70 200 VCE = 10 V, IC = 20 mA
Gain Bandwidth Product fT 5.0 GHz VCE = 10 V, IC = 20 mA
Output Capacitance * Cob 0.6 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Gain S21e
Noise Figure NF
Maximum Available Gain MAG
C 70 mA
j 200 °C
2
12.7 dB f = 1.0 GHz
5.0 6.7 dB
1.7 dB f = 1.0 GHz
2.6 4.0 dB
17 dB f = 1.0 GHz
11 dB
µ
AVCB = 15 V, IE = 0
µ
AVEB = 2.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 5.0 mA
VCE = 10 V, IC = 20 mA
f = 2.0 GHz
f = 2.0 GHz
f = 2.0 GHz
* The emitter terminal should be connected to the guard terminal of the three-terminal capacitance bridge.
TYPICAL CHARACTERISTICS (TA = 25 °C)
DC CURRENT GAIN vs.
200
100
50
−DC Current Gain
FE
h
20
10
0.5 1 5 10 50 70
COLLECTOR CURRENT
CE
V
= 10 V
IC−Collector Current−mA
−Collector Current−mA
C
I
70
50
20
10
5
2
1
0.5
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
CE
= 10 V
V
0.5 0.6 0.7 0.8 0.9
VBE−Base to Emitter Voltage−V
5
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2SC2148, 2SC2149
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
7
CE
= 10 V
V
5
2
1
0.5
0.2
−Gain Bandwidth Product−GHz
T
f
0.1
0.5 1 5 10 7050
IC−Collector Current−mA
COLLECTOR AND EMITTER CAPACITANCE vs.
REVERSE VOLTAGE
2
f = 1.0 MHz
C
1
ob
C
ib
INSERTION GAIN vs.
15
COLLECTOR CURRENT
CE
= 10 V
V
f = 1.0 GHz
10
−Insertion Gain−dB
2
5
21e
S
0
0.5 1 5 10 7050
IC−Collector Current−mA
NOISE FIGURE vs.
7
6
5
4
3
COLLECTOR CURRENT
CE
V
f = 1.85 GHz
= 10 V
−Collector Capacitance−pF
−Emitter Capacitance−pF
ob
ib
0.5
C
C
0.3
0 0.5 1 2 5 10 20 30
VCB−Collector to Base Voltage−V
V
EB
−Emitter to Base Voltage−V
2
NF−Noise Figure−dB
1
0
0.5 1 5 10 7050
IC−Collector Current−mA
6
Page 7
[MEMO]
2SC2148, 2SC2149
7
Page 8
2SC2148, 2SC2149
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5
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