Datasheet 2SC2320 Specification

Page 1
2SC2320
Free Datasheet http://www.datasheet4u.com/
Audio Frequency Voltage Amplifier Applications
Low Noise Amplifier Applications
Excellent hFE Linearity
Complementary to 2SA999
MAXIMUM RATINGS (Ta = 25 °C)
CHARACTERISTIC
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VEBO
VCEO
Ic
Pc
Tj
Tstg
RATING
50
6
50
200
300
125
-55~+125
UNIT
V
V
V
mA
mW
°C
°C
NPN Epitaxial Planar Silicon Transistor
Unit : mm
4.6
1 2 3
6.2 MAX.
0.45
10.5 MIN.
4.4 MAX.
1 : Emitter
2 : Collector
3 : Base
1.25
1 2 3
1.25
EIAJ : SC-43
JEDEC : TO-92
1.5
ELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector Cut-off current
Emitter Cut-off current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
NF
TEST CONDITION
Ic = 100 A, RBE = μ
VCB = 50V, IE = 0
VEB = 6V, Ic = 0
VCE = 6V, Ic = 1mA
VCE = 6V, Ic = 0,1mA
Ic = 100mA, IB = 10mA
VCE = 6V, IE = 10mA
VCB = 6V, IE = 0, f = 1MHz
VCE = 6V, IE = 0,3mA
f = 100Hz, RG = 10k
hFE Rank classification :
Rank
hFE
D
90~180
MIN.
TYP.
50
90
50
E
150~300
200
3,5
F
250~500
MAX. UNIT.
V
0.1
0.1
μA
μA
800
0.3
V
MHz
pF
2
dB
G
400~800
MITSUBISHI ELECTRIC
Page 2
2SC2320
Free Datasheet http://www.datasheet4u.com/
MITSUBISHI ELECTRIC
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