Datasheet 2SC458LG, 2SC2310 Datasheet (HIT)

2SC458 (LG), 2SC2310

Silicon NPN Epitaxial

Application

• Low frequency low noise amplifier

• Complementary pair with 2SA1031 and 2SA1032

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SC458 (LG), 2SC2310

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SC458 (LG) 2SC2310 Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P

CBO

CEO

EBO

C

E

C

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

30 55 V
30 50 V
55V
100 100 mA
–100 –100 mA
200 200 mW

2

2SC458 (LG), 2SC2310

Electrical Characteristics (Ta = 25°C)

2SC458 (LG) 2SC2310

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I
Emitter cutoff current I
DC current transfer ratio hFE*
Collector to emitter

saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output

capacitance
Noise figure NF — 3 5 — 3 5 dB VCE = 6 V, IC = 0.1 mA,

Small signal input
impedance

Small signal voltage
feedback ratio

Small signal current
transfer ratio

Small signal output
admittance

Note: 1. The 2SC458 (LG) and 2SC2310 are grouped by hFE as follows.

BCD

2SC458 (LG) 100 to 200 160 to 320 250 to 500
2SC2310 100 to 200 160 to 320 —

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

BE

T

30 — — 55 — — V IC = 10 µA, IE = 0

30 — — 50 — — V IC = 1 mA, RBE = ∞

5 ——5 ——V IE = 10 µA, IC = 0

— — 0.5 — — 0.5 µAVCB =18 V, IE = 0
— — 0.5 — — 0.5 µAVEB = 2 V, IC = 0

1

100 — 500 100 — 320 VCE = 12 V, IC = 2 mA
— — 0.2 — — 0.2 V IC = 10 mA, IB = 1 mA

— 0.67 0.75 — 0.67 0.75 V VCE = 12 V, IC = 2 mA
— 230 — — 230 — MHz VCE = 12 V, IC = 2 mA

Cob — 1.8 3.5 — 1.8 3.5 pF VCB = 10 V, IE = 0,

f = 1 MHz

f = 120 Hz, R

h

ie

— 16.5 — — 16.5 — kΩ VCE = 5V, IC = 0.1mA,

= 500 Ω

g

f = 270 Hz

h

re

h

fe

h

oe

—70——70—× 10

— 130 — — 130 —

— 11.0 — — 11.0 — µS

–6

3

2SC458 (LG), 2SC2310

Maximum Collector Dissipation Curve

300

(mW)

C

200

100

Collector Power Dissipation P

0 50 100 150

Ambient Temperature Ta (°C)

Typical Transfer Characteristics

5

4

(mA)

C

VCE = 12 V

3

Typical Output Characteristics

10

8

(mA)

C

6

4

2

Collector Current I

0

Collector to Emitter Voltage VCE (V)

DC Current Transfer Ratio vs.

300

FE

VCE = 12 V

200

60

50

40

30

20

10 µA

IB = 0

Collector Current

Ta = 75°C

25

P

C

= 200mW

252015105

2

1

Collector Current I

0

Base to Emitter Voltage V

BE

(V)

100

DC Current Transfer Ratio h

1.00.80.60.40.2

0

0.03 0.1 300.3 31.0 10
Collector Current I

(mA)

C

4

2SC458 (LG), 2SC2310

Small Signal Current Transfer Ratio vs.

Collector Current

300

fe

f = 270 Hz

VCE = 12 V

200

100

Small Signal Current Transfer Ratio h

0

0.03 0.1 300.3 31.0 10
Collector Current I

(mA)

C

Collector Output Capacitance vs.

Collector to Base Voltage

5

(pF)

ob

4

IE = 0
f = 1 MHz

Base to Emitter Voltage vs.

Ambient Temperature

0.9

(V)

0.8

BE

0.7

0.6

0.5

Base to Emitter Voltage V

0.4
–20 0 8020 6040

Ambient Temperature Ta (°C)

Emitter Input Capacitance vs.

Emitter to Base Voltage

5

(pF)

ib

4

VCE = 12 V
I

= 2 mA

C

IC = 0

f = 1 MHz

3

2

1

Collector Output Capacitance C

0

42081612

Collector to Base Voltage V

CB

(V)

3

2

1

Emitter Input Capacitance C

0

210486

Emitter to Base Voltage V

EB

(V)

5

2SC458 (LG), 2SC2310

Contours of Constant Noise Figure

10

5

(kΩ)

g

2

NF = 1dB

1.0

0.5

2

3

4

0.2

Signal Source Resistance R

0.1

6

8

0.05 0.1 0.2 1.00.5 2.0
Collector Current I

Contours of Constant Noise Figure

10

5

(kΩ)

g

VCE = 6 V

f = 10 kHz

2

NF = 0.5 dB

1.0
1

0.5
2

0.2

Signal Source Resistance R

4

0.1

0.05 0.1 0.2 1.00.5 2.0
Collector Current I

C

VCE = 6 V
f = 120 Hz

(mA)

C

4
2

1

(mA)

12

10

Contours of Constant Noise Figure

14

8

10

(kΩ)

g

1.0

5

VCE = 6 V

f = 1 kHz

2

NF = 0.5 dB

8

4
3

1.0

6

0.5

0.2

Signal Source Resistance R

0.1

8

2

3
4

0.05 0.1 0.2 1.00.5 2.0
Collector Current I

(mA)

C

Noise Figure vs. Frequency

10

IC = 0.1 mA

= 500 Ω

R

8

V

g

CE

= 6 V

6

4

Noise Figure NF (dB)

2

0

100 1k 3k300 10k 30k30

Frequency f (Hz)

6

Noise Figure vs. Collector to Emitter Voltage

8

IC = 0.1 mA
R

= 500 Ω

g

6

f = 120 Hz

4

Noise Figure NF (dB)

2

2SC458 (LG), 2SC2310

h Parameter vs. Collector Current

100

50

VCE = 6 V

20

C

f = 270 Hz

10

5
2

1.0

0.5

h

ie

h

reh

fe

h

oe

= 0.1mA

0.2

0.1

0.05

0.02

Percentage of Relative to I

0.01

0.010.02 0.05 0.1 0.2 2 50.5 1.0 10
Collector Current I

0

1

Collector to Emitter Voltage VCE (V)

1.8

= 5V

1.6

CE

h

oe

h

re

h

fe

1.4

1.2

h

ie

1.0

Percentage of Relative to V

0.8

(mA)

C

30201052

h Parameter vs. Collector to

Emitter Voltage

IC = 0.1 mA

f = 270 Hz

h

re

h

oe

h

fe

h

ie

Collector to Emitter Voltage V

CE

h

h

oe

fe

h

ie

h

re

2010521.00.5

(V)

7

Unit: mm

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 (1)
Conforms
Conforms

0.25 g

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