Page 1
Transistor
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
2SC2295
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1022
Features
■
●
Optimum for RF amplification of FM/AM radios.
●
High transition frequency fT.
●
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
C
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
200
150
–55 ~ +150
Unit
V
V
V
mA
mW
˚C
˚C
Unit: mm
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini T ype Package
Marking symbol : V
Electrical Characteristics (Ta=25˚C)
■
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
*
hFE Rank classification
Rank B C
Marking Symbol VB VC
Parameter
h
FE
Symbol
I
CBO
*
h
FE
f
T
NF
Z
rb
C
re
70 ~ 140 110 ~ 220
Conditions
VCB = 10V, IE = 0
VCB = 10V, IE = –1mA
VCB = 10V, IE = –1mA, f = 200MHz
VCB = 10V, IE = –1mA, f = 5MHz
VCB = 10V, IE = –1mA, f = 2MHz
VCE = 10V, IC = 1mA, f = 10.7MHz
min
70
150
typ
250
2.8
22
0.9
max
0.1
220
4
50
1.5
Unit
µA
MHz
dB
Ω
pF
1
Page 2
Transistor 2SC2295
PC — Ta IC — V
250
)
225
mW
(
200
C
175
150
125
100
75
50
25
Collector power dissipation P
0
0 1406020 80 12040 100
Ambient temperature Ta (˚C
IB — V
BE
120
100
)
µA
(
80
B
60
40
Base current I
20
0
01.00.80.2 0.60.4
Base to emitter voltage VBE (V
VCE=10V
Ta=25˚C
CE
12
10
)
mA
(
8
C
6
4
Collector current I
2
0
018612
)
Collector to emitter voltage VCE (V
IC — V
60
50
)
mA
)
(
40
C
30
20
Collector current I
10
0
0 2.01.60.4 1.20.8
Base to emitter voltage VBE (V
25˚C
Ta=75˚C
Ta=25˚C
IB=100µA
80µA
60µA
40µA
20µA
BE
VCE=10V
–25˚C
)
15.0
12.5
)
mA
(
10.0
C
7.5
5.0
Collector current I
2.5
0
0 1008020 6040
)
)
100
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
0.1 1 10 1000.3 3 30
IC — I
B
VCE=10V
Ta=25˚C
Base current IB (µA
V
— I
CE(sat)
C
IC/IB=10
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
)
hFE — I
C
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
0.1 1 10 1000.3 3 30
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
2
VCE=10V
fT — I
E
400
350
)
MHz
300
(
T
250
200
150
100
Transition frequency f
50
0
– 0.1 –1 –10 –100– 0.3 –3 –30
)
Emitter current IE (mA
VCB=10V
f=100MHz
Ta=25˚C
)
60
)
Ω
(
50
rb
40
30
20
10
Reverse transfer impedance Z
0
– 0.1 – 0.3 –1 –3 –10
Zrb — I
E
VCB=10V
f=2MHz
Ta=25˚C
Emitter current IE (mA
)
Page 3
Transistor 2SC2295
Cre — V
)
3.0
pF
(
re
2.5
2.0
1.5
1.0
0.5
Common emitter reverse transfer capacitance C
0
0.1 1 10 1000.3 3 30
Collector to emitter voltage VCE (V
0
)
mS
(
– 0.1
re
– 0.2
– 0.3
– 0.4
1mA
yre=gre+jb
VCE=10V
IC=3mA
re
bre — g
CE
f=10.7MHz
Ta=25˚C
re
f=10.7MHz
)
IE=–1mA
58
100
NF — I
E
)
dB
(
12
10
8
6
4
VCB=6V
f=100MHz
R
g
Ta=25˚C
Noise figure NF
2
0
– 0.1 – 0.3 –1 –3 –10
Emitter current IE (mA
bfe — g
fe
)
mS
(
0
– 0.1mA
–20
fe
–40
–60
–80
–1mA
–2mA
100
IE=–4mA
f=10.7MHz
58
100
100
10.7
58
58
=50Ω
bie — g
ie
24
20
)
mS
(
16
ie
12
8
Input susceptance b
4
0
)
–4mA
–2mA
=–1mA
E
I
f=10.7MHz
0403282416
Input conductance gie (mS
boe — g
1.2
)
1.0
mS
(
oe
IE=–1mA
0.8
0.6
0.4
100
58
Vie=gie+jb
ie
VCE=10V
–7mA
100
58
)
oe
yoe=goe+jb
oe
VCE=10V
– 0.5
Reverse transfer susceptance b
– 0.6
– 0.5 0– 0.1– 0.4 – 0.2– 0.3
Reverse transfer conductance gre (mS
–100
Forward transfer susceptance b
–120
0 1008020 6040
)
Forward transfer conductance gfe (mS
yfe=gfe+jb
VCE=10V
0.2
fe
Output susceptance b
f=10.7MHz
0
00.50.40.1 0.30.2
)
Output conductance goe (mS
)
3
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