2SC1627
2003-03-24
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC1627
Driver Stage Amplifier Applications
Voltage Amplifier Applications
!" Complementary to 2SA817
!" Driver stage application of 20 to 25 watts amplifiers.
Maximum Ratings
(Ta !!!! 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
80 V
Collector-emitter voltage V
CEO
80 V
Emitter-base voltage V
EBO
5 V
Collector current IC 300 mA
Base current IB 60 mA
Collector power dissipation PC 600 mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
!55~125 °C
Electrical Characteristics
(Ta !!!! 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
VCB" 50 V, IE" 0 #$ # 0.1 %A
Emitter cut-off current I
EBO
VEB" 5 V, IC" 0 # # 0.1 %A
Collector-emitter saturation voltage V
(BR) CEOIC
" 5 mA, IB" 0 80 # # V
h
FE (1)
(Note)
V
CE
" 2 V, IC" 50 mA 70 # 240
DC current gain
h
FE (2)
VCE" 2 V, IC" 200 mA 40 # #
Collector-emitter saturation voltage V
CE (sat)
IC" 200 mA, IB" 10 mA # # 0.5 V
Base-emitter voltage VBE VCE" 2 V, IC" 5 mA 0.55 # 0.8 V
Transition frequency fT VCE" 10 V, IC" 10 mA # 100 # MHz
Collector output capacitance Cob VCB" 10 V, IE" 0, f " 1 MHz # 10 # pF
Note: h
FE (1)
classification O: 70~140, Y: 120~240
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)