Page 1
2SC1623
NPN General Purpose Transistors
P b
Lead(Pb)-Free
1
3
2
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous mA
Total Device Dissipation FR-5 Board
=25°C
T
A
Derate above 25°C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Value Unit
50
60
7
150
225
1.8
mW/°C
V
V
V
mW
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, TA=25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
R
R
P
T
θJA
D
θJA
T
stg
j
556
300
2.4
417
-55 to+150
-55 to +150
°C/W
mW
mW/°C
°C/W
°C
°C
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2SC1623
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min MaxTyp Unit
OFF CHARACTERISTICS
= 60V, IE = 0
V
CB
VEB = 5V, IC = 0
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
= 100mA, IB = 10mA
I
C
Base-Emitter Saturation Voltage
= 100mA, IB = 10mA
I
C
Base-Emitter On Voltage
I
= 1mA,VCE=6.0V
C
DC Current Transfer Ration
V
= 6V, IC = 1mA
CE
SMALL-SIGNAL CHARACTERISTICS
Transition frequence
V
= 6V, IC=10mA
CE
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
V
h
f
BE
FE
-
- 0.1
-
-
0.55 0.62
120
T
-
-
-
0.15
0.86
-
250
0.1
0.3
1.0
0.65
560
-
µA
µA
V
V
V
MHz
Output Capacitance(VCE = 6V, IE=0, f=1.0MHz)
CLASSIFICATION h
Rank
Range
Marking
FE
Q
120-270
L5
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C
ob
R
180-390
L6
2/5
-
3
-
P
f
S
270-560
L7
Rev.A 30-Jul-10
Page 3
2SC1623
50
20
10
50
2
1
0.5
, COLLECTOR CURRENT (mA)
C
0.2
I
0.1
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6
25°C
= 100°C
A
T
– 55°C
VCE= 6 V
VBE,BASE TO EMITTER VOLTAGE(V)
Fig.1 Grounded emitter propagation characteristics
10
8
6
100
T A = 25°C
80
60
40
20
, COLLECTOR CURRENT (mA)
C
I
0
0 0.4 0.8 1.2 1.6 2.0
0.50mA
VCE,COLLECTOR TO EMITTER VOLTAGE (V)
Fig.2 Grounded emitter output characteristics( )
500
200
100
4
2
, COLLECTOR CURRENT (mA)
C
I
0
0 4 8 12 16 20
VCE,COLLECTOR TO EMITTER VOLTAGE (V)
Fig.3 Grounded emitter output characteristics( )
500
200
100
50
, DC CURRENT GAIN
FE
h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Fig.5 DC current gain vs. collector current ( )
50
, DC CURRENT GAIN
FE
h
20
10
0.2 0.5 1 2 5 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Fig.4 DC current gain vs. collector current ( )
0.5
0.2
0.1
0.05
0.02
, COLLECTOR SATURATION VOLTAGE(V)
0.01
CE(sat)
V
0.2 0.5 1 2 5 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
collector current
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Rev.A
Page 4
2SC1623
0.5
0.2
0.1
0.05
0.02
, COLLECTOR SATURATION VOLTAGE(V)
0.01
CE(sat)
V
0.2 0.5 1 2 5 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
500
200
I
0.5
0.2
0.1
0.05
0.02
, COLLECTOR SATURATION VOLTAGE(V)
0.01
CE(sat)
V
0.2 0.5 1 2 5 10 20 50 100
IC, COLLECTOR CURRENT (mA)
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
20
10
5
100
, TRANSITION FREQUENCY(MHz)
r
f
50
–0.5 –1 –2 –5 –10 –20 –50 –100
IE, EMITTER CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
200
100
50
20
, BASE COLLECTOR TIME CONSTANT( ps)
10
bb
r
-
c
–0.2 –0.5 –1 –2 –5 –10
C
IE, EMITTER CURRENT (mA)
Fig.11 Base-collector time constant vs.emitter current
2
1
, COLLECTOR OUTPUT CAPACITANCE( pF)
, EMITTER INPUT CAPACITANCE (pF)
ob
ib
C
0.2 0.5 1 2 5 10 20 50
C
VCB, COLLECTOR TO BASE VOLTAGE (V)
V
, EMITTER TO BASE VOLTAGE (V)
EB
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
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Page 5
2SC1623
SOT-23 Outline Dimension
A
B
TOP VIEW
D
E
G
H
C
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
SOT-23
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