Datasheet 2SC1567, 2SC1567A Datasheet (Panasonic)

Power Transistors

2SC1567, 2SC1567A

Silicon NPN epitaxial planar type

For low-frequency high power driver
Complementary to 2SA0794, 2SA0794A

■ Features

• High collector-emitter voltage (Base open) V

• Optimum for the driver stage of low-frequency and 40 W to 100 W

output amplifier

• TO-126B package which requires no insulation plate for installa­tion to the heat sink

CEO

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

2SC1567 V

2SC1567A 120

2SC1567 V

2SC1567A 120

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

100 V

100 V

5V

0.5 A

1A

1.2 W

150 °C

−55 to +150 °C

φ 3.16

±0.1

0.75

+0.5

8.0

–0.1

±0.1

4.6

±0.2

123

±0.5

±0.3

11.0

3.8

±0.1

1.9

±1.0

16.0

0.5

±0.1

0.5

2.3

±0.2

TO-126B-A1 Package

±0.1

1: Emitter
2: Collector
3: Base

Unit: mm

3.2

±0.2

±0.1

3.05

1.76

±0.1

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Forward current transfer ratio h

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

2SC1567 V

CEOIC

2SC1567A 120

EBOIE

FE1

h

FE2

CE(sat)IC

BE(sat)IC

Transition frequency f

Collector output capacitance C
(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*: Rank classification

Rank R S

h

FE1

Publication date: February 2003 SJD00092BED

130 to 220 185 to 330

= 100 µA, IB = 0 100 V

= 1 µA, IC = 05V

*

VCE = 10 V, IC = 150 mA 130 330 

VCE = 5 V, IC = 500 mA 50 100

= 500 mA, IB = 50 mA 0.2 0.4 V

= 500 mA, IB = 50 mA 0.85 1.20 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF

ob

1

2SC1567, 2SC1567A

PC  T

1.6

)
W

(

C

1.2

0.8

0.4

a

Without heat sink

Collector power dissipation P

0

0 16040 12080

Ambient temperature Ta (°C

V

 I

10

CE(sat)

C

IC/IB=10

(V)

CE(sat)

1

0.1

0.01

Collector-emitter saturation voltage V

0.001
1

TC=100˚C

25˚C

10 100 1 000

–25˚C

Collector current IC (mA)

IC  V

1.2

1.0

IB=20mA

)
A

(

0.8

C

0.6

0.4

Collector current I

0.2

0

012210486

)

Collector-emitter voltage VCE (V

V

100

18mA

BE(sat)

16mA

 I

CE

14mA

12mA

C

TC=25˚C

10mA

8mA

6mA

4mA

2mA

)

IC/IB=10

(V)

BE(sat)

10

1

0.1

TC=–25˚C

100˚C

25˚C

1.2

1.0

(A)

0.8

C

0.6

0.4

Collector current I

0.2

0

015105

4

10

FE

3

10

2

10

10

IC  I

B

Base current IB (mA)

hFE  I

C

V

TC=100˚C

25˚C

–25˚C

VCE=10V
T

=25˚C

C

=10V

CE

Forward current transfer ratio h

Base-emitter saturation voltage V

0.01
1

10 100 1 000

Collector current IC (mA)

1

1 10 100 1 000

Collector current IC (mA)

200

160

(MHz)

T

120

80

40

Transition frequency f

0

−1 −10 −100

Emitter current IE (mA)

2

fT  I

E

VCB=10V
f=200MHz
T

=25˚C

C

Cob  V

50

(pF)

ob

C

40

30

20

10

Collector output capacitance

(Common base, input open circuited)

0

1 10 100

CB

Collector-base voltage VCB (V

SJD00092BED

IE=0
f=1MHz
T

=25˚C

C

I

 T

5

10

VCE=20V

4

10

CEO

a

)

3

10

)

a

T
(

= 25°C

a

T
(

CEO

I

2

10

CEO

I

10

1

)

0 2001601208040

Ambient temperature Ta (°C

)

4

10

3

10

)

)

a

T
(

= 25°C

2

a

10

T

(

CBO

I

CBO

I

10

1

016040 12080

I

 T

CBO

a

VCB=20V

Ambient temperature Ta (°C

2SC1567, 2SC1567A

Safe operation area

10

I

CP

1

)
A

(

C

I

C

0.1

Collector current I

0.01

0.001
1

)

10 100 1

Collector-emitter voltage VCE (V

t=1s

Single pulse
T

C

t=10ms

2SC1567

=25˚C

2SC1567A

000

)

SJD00092BED

3

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