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Power Transistors
2SC1567, 2SC1567A
Silicon NPN epitaxial planar type
For low-frequency high power driver
Complementary to 2SA0794, 2SA0794A
■ Features
• High collector-emitter voltage (Base open) V
• Optimum for the driver stage of low-frequency and 40 W to 100 W
output amplifier
• TO-126B package which requires no insulation plate for installation to the heat sink
CEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SC1567 V
2SC1567A 120
2SC1567 V
2SC1567A 120
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
stg
100 V
100 V
5V
0.5 A
1A
1.2 W
150 °C
−55 to +150 °C
φ 3.16
±0.1
0.75
+0.5
8.0
–0.1
±0.1
4.6
±0.2
123
±0.5
±0.3
11.0
3.8
±0.1
1.9
±1.0
16.0
0.5
±0.1
0.5
2.3
±0.2
TO-126B-A1 Package
±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
3.2
±0.2
±0.1
3.05
1.76
±0.1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open) V
Forward current transfer ratio h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
2SC1567 V
CEOIC
2SC1567A 120
EBOIE
FE1
h
FE2
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank R S
h
FE1
Publication date: February 2003 SJD00092BED
130 to 220 185 to 330
= 100 µA, IB = 0 100 V
= 1 µA, IC = 05V
*
VCE = 10 V, IC = 150 mA 130 330
VCE = 5 V, IC = 500 mA 50 100
= 500 mA, IB = 50 mA 0.2 0.4 V
= 500 mA, IB = 50 mA 0.85 1.20 V
VCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF
ob
1
Page 2
2SC1567, 2SC1567A
PC T
1.6
)
W
(
C
1.2
0.8
0.4
a
Without heat sink
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C
V
I
10
CE(sat)
C
IC/IB=10
(V)
CE(sat)
1
0.1
0.01
Collector-emitter saturation voltage V
0.001
1
TC=100˚C
25˚C
10 100 1 000
–25˚C
Collector current IC (mA)
IC V
1.2
1.0
IB=20mA
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
012210486
)
Collector-emitter voltage VCE (V
V
100
18mA
BE(sat)
16mA
I
CE
14mA
12mA
C
TC=25˚C
10mA
8mA
6mA
4mA
2mA
)
IC/IB=10
(V)
BE(sat)
10
1
0.1
TC=–25˚C
100˚C
25˚C
1.2
1.0
(A)
0.8
C
0.6
0.4
Collector current I
0.2
0
015105
4
10
FE
3
10
2
10
10
IC I
B
Base current IB (mA)
hFE I
C
V
TC=100˚C
25˚C
–25˚C
VCE=10V
T
=25˚C
C
=10V
CE
Forward current transfer ratio h
Base-emitter saturation voltage V
0.01
1
10 100 1 000
Collector current IC (mA)
1
1 10 100 1 000
Collector current IC (mA)
200
160
(MHz)
T
120
80
40
Transition frequency f
0
−1 −10 −100
Emitter current IE (mA)
2
fT I
E
VCB=10V
f=200MHz
T
=25˚C
C
Cob V
50
(pF)
ob
C
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
CB
Collector-base voltage VCB (V
SJD00092BED
IE=0
f=1MHz
T
=25˚C
C
I
T
5
10
VCE=20V
4
10
CEO
a
)
3
10
)
a
T
(
= 25°C
a
T
(
CEO
I
2
10
CEO
I
10
1
)
0 2001601208040
Ambient temperature Ta (°C
)
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4
10
3
10
)
)
a
T
(
= 25°C
2
a
10
T
(
CBO
I
CBO
I
10
1
016040 12080
I
T
CBO
a
VCB=20V
Ambient temperature Ta (°C
2SC1567, 2SC1567A
Safe operation area
10
I
CP
1
)
A
(
C
I
C
0.1
Collector current I
0.01
0.001
1
)
10 100 1
Collector-emitter voltage VCE (V
t=1s
Single pulse
T
C
t=10ms
2SC1567
=25˚C
2SC1567A
000
)
SJD00092BED
3
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if any of the products or technologies described in this material and controlled under the "Foreign
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
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2002 JUL
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