Datasheet 2SC1515 Datasheet (HIT)

Page 1
Application
High voltage switching
Outline
2SC1515(K)
Silicon NPN Triple Diffused
1. Emitter
2. Collector
3. Base
3
2
1
Page 2
2SC1515 (K)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage V
Emitter to base voltage V Collector current I Collector power dissipation P
CBO
CES
V
CEO
EBO
C
C
Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CES
voltage
V
(BR)CEO
Emitter to base breakdown
V
(BR)EBO
voltage Collector cutoff current I DC current transfer ratio h Collector to emitter saturation
V
CBO
FE
CE(sat)
voltage Base to emitter saturation
V
BE(sat)
voltage Gain bandwidth product f
T
Collector output capacitance Cob 10 pF VCB = 6 V, IE = 0, f = 1 MHz
200 V IC = 10 µA, RBE = 0
150 V IC = 1 mA, RBE = 5——VI
0.1 µAV 30 300 V — 1.0 V IC = 10 mA, IB = 1 mA
1.5 V IC = 10 mA, IB = 1 mA
60 MHz VCE = 6 V, IC = 10 mA
200 V 200 V 150 V 5V 50 mA 200 mW
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 6 V, IC = 10 mA
CE
2
Page 3
2SC1515 (K)
Maximum Collector Dissipation Curve
300
(mW)
C
200
100
Collector Power Dissipation P
0
50
Ambient Temperature Ta (°C)
Collector Cutoff Current vs.
Ambient Temperature
1,000
(nA)
CBO
VCB = 20 V
100
10
100 150
Typical Output Characteristics
20
16
(mA)
C
12
8
4
Collector Current I
0
48
Collector to Emitter Voltage V
DC Current Transfer Ratio vs.
Collector Current
100
VCE = 6 V
80
FE
60
40
200 180 160
140 120 100
80 60 40
20 µA
IB = 0
12 16 20
P
C
= 200 mW
CE
(V)
1.0
Collector Cutoff Current I
0.1 0
40 80
Ambient Temperature Ta (°C)
120 160 200
20
DC Current Transfer h
0
1
310
Collector Current I
30 100
(mA)
C
3
Page 4
2SC1515 (K)
DC Current Transfer Ratio vs.
Ambient Temperature
200
FE
160
VCE = 6 V I
= 10 mA
C
120
80
40
DC Current Transfer Ratio h
0
20 40
Ambient Temperature Ta (°C)
60 80 100
Collector to Emitter Saturation
(V)
Voltage vs. Collector Current
1.2
CE(sat)
1.0
IC = 10 I
B
0.8
0.6
0.4
0.2
0
0.5
1.0 2.0
Collector to Emitter Saturation Voltage V
Collector Current I
5.0 10 20 50 (mA)
C
4
Page 5
Unit: mm
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code JEDEC EIAJ Weight
(reference value)
TO-92 (1) Conforms Conforms
0.25 g
Page 6
Cautions
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2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail­safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.
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