
Application
High voltage switching
Outline
TO-92 (1)
2SC1515(K)
Silicon NPN Triple Diffused
1. Emitter
2. Collector
3. Base
3
2
1

2SC1515 (K)
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P
CBO
CES
V
CEO
EBO
C
C
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to emitter breakdown
V
(BR)CES
voltage
V
(BR)CEO
Emitter to base breakdown
V
(BR)EBO
voltage
Collector cutoff current I
DC current transfer ratio h
Collector to emitter saturation
V
CBO
FE
CE(sat)
voltage
Base to emitter saturation
V
BE(sat)
voltage
Gain bandwidth product f
T
Collector output capacitance Cob — — 10 pF VCB = 6 V, IE = 0, f = 1 MHz
200 — — V IC = 10 µA, RBE = 0
150 — — V IC = 1 mA, RBE = ∞
5——VI
— — 0.1 µAV
30 — 300 V
— — 1.0 V IC = 10 mA, IB = 1 mA
— — 1.5 V IC = 10 mA, IB = 1 mA
60 — — MHz VCE = 6 V, IC = 10 mA
200 V
200 V
150 V
5V
50 mA
200 mW
= 10 µA, IC = 0
E
= 20 V, IE = 0
CB
= 6 V, IC = 10 mA
CE
2

2SC1515 (K)
Maximum Collector Dissipation Curve
300
(mW)
C
200
100
Collector Power Dissipation P
0
50
Ambient Temperature Ta (°C)
Collector Cutoff Current vs.
Ambient Temperature
1,000
(nA)
CBO
VCB = 20 V
100
10
100 150
Typical Output Characteristics
20
16
(mA)
C
12
8
4
Collector Current I
0
48
Collector to Emitter Voltage V
DC Current Transfer Ratio vs.
Collector Current
100
VCE = 6 V
80
FE
60
40
200
180
160
140
120
100
80
60
40
20 µA
IB = 0
12 16 20
P
C
= 200 mW
CE
(V)
1.0
Collector Cutoff Current I
0.1
0
40 80
Ambient Temperature Ta (°C)
120 160 200
20
DC Current Transfer h
0
1
310
Collector Current I
30 100
(mA)
C
3

2SC1515 (K)
DC Current Transfer Ratio vs.
Ambient Temperature
200
FE
160
VCE = 6 V
I
= 10 mA
C
120
80
40
DC Current Transfer Ratio h
0
20 40
Ambient Temperature Ta (°C)
60 80 100
Collector to Emitter Saturation
(V)
Voltage vs. Collector Current
1.2
CE(sat)
1.0
IC = 10 I
B
0.8
0.6
0.4
0.2
0
0.5
1.0 2.0
Collector to Emitter Saturation Voltage V
Collector Current I
5.0 10 20 50
(mA)
C
4

Unit: mm
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g

Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Europe GmbH
Electronic components Group
Dornacher Stra§e 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 049318
Tel: 535-2100
Fax: 535-1533
Hitachi Asia Ltd.
Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX