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Transistors
2SC1509
Silicon NPN epitaxial planar type
For low-frequency driver amplification
Complementary to 2SA0777 (2SA777)
■ Features
• High collector-emitter voltage (Base open) V
• Optimum for the driver stage of a low-frequency and 25 W to 30
W output amplifier
CEO
■ Absolute Maximum Ratings Ta = 25°C
0.7
±0.1
5.9
±0.2
+0.3
±0.2
8.6
–0.2
0.7
±0.5
13.5
4.9
Unit: mm
±0.2
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Peak collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
CP
C
j
−55 to +150 °C
stg
80 V
80 V
5V
0.5 A
1A
750 mW
150 °C
0.45
+0.2
–0.1
132
(1.27)(1.27)
2.54
+0.2
0.45
–0.1
(3.2)
±0.15
TO-92L-A1 Package
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
CBOIC
CEOIC
EBOIE
I
CBO
FE1
h
FE2
CE(sat)IC
BE(sat)IC
Transition frequency f
Collector output capacitance C
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank R S
h
FE1
130 to 220 185 to 330
= 10 µA, IE = 080V
= 100 µA, IB = 080 V
= 10 µA, IC = 05V
VCB = 20 V, IE = 0 0.1 µA
*VCE = 10 V, IC = 150 mA 130 330
VCE = 5 V, IC = 500 mA 50 100
= 300 mA, IB = 30 mA 0.2 0.4 V
= 300 mA, IB = 30 mA 0.85 1.2 V
VCB = 10 V, IE = −50 mA, f = 200 MHz 120 MHz
T
VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF
ob
Note) The part number in the parenthesis shows conventional part number.
Publication date: November 2002 SJC00106BED
1
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2SC1509
PC T
1.2
)
1.0
W
(
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080
a
Ambient temperature Ta (°C
V
I
10
)
V
(
CE(sat)
1
0.1
0.01
Collector-emitter saturation voltage V
0.001
1 10 100 1 000
CE(sat)
C
IC / IB = 10
Ta = 75°C
25°C
−25°C
Collector current IC (mA
IC V
BE(sat)
I
75°C
CE
IB = 10 mA
C
IC / IB = 10
Ta = −25°C
= 25°C
T
a
9 mA
8 mA
7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
1.2
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
0108264
)
300
250
FE
200
150
100
Forward current transfer ratio h
50
1.2
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
)
0108264
Collector-emitter voltage VCE (V
V
100
)
V
(
BE(sat)
10
1
0.1
25°C
IC I
B
Base current IB (mA
hFE I
C
VCE = 10 V
Ta = 75°C
25°C
−25°C
VCE = 10 V
= 25°C
T
a
)
Base-emitter saturation voltage V
0.01
1 10 100 1 000
)
Collector current IC (mA
)
0
1 10 100 1 000
Collector current IC (mA
)
fT I
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
−1 −10 −100
Emitter current IE (mA
2
E
VCB = 10 V
T
= 25°C
a
(pF)
ob
C
Cob V
50
40
CB
IE = 0
f = 1 MHz
T
= 25°C
a
4
10
3
10
VCB = 20 V
I
CBO
T
a
)
30
20
10
Collector output capacitance
(Common base, input open circuited)
0
1 10 100
)
Collector-base voltage VCB (V
)
a
T
(
= 25°C
2
a
10
T
(
CBO
I
CBO
I
10
1
0 18060 120
)
Ambient temperature Ta (°C
)
SJC00106BED
Page 3
)
T
(
I
a
CEO
)
= 25°C
T
(
I
a
CEO
2SC1509
I
T
5
10
4
10
3
10
2
10
CEO
a
VCE = 10 V
)
A
(
C
Collector current I
10
Safe operation area
10
I
CP
1
I
C
0.1
0.01
DC
Single pulse
= 25°C
T
a
t = 10 ms
t = 1 s
1
01406020 80 12040 100
Ambient temperature Ta (°C
0.001
)
0.1 1 10 100
Collector-emitter voltage VCE (V
)
SJC00106BED
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if any of the products or technologies described in this material and controlled under the "Foreign
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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