Datasheet 2SC1473, 2SC1473A Datasheet (Panasonic)

Transistor

2SC1473, 2SC1473A

Silicon NPN triple diffusion planer type

For general amplification
2SC1473 complementary to 2SA1018
2SC1473A complementary to 2SA1767

Features

■

●

High collector to emitter voltage V

●

High transition frequency fT.

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter

Collector to
base voltage
Collector to
emitter voltage

2SC1473
2SC1473A
2SC1473

2SC1473A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

.

CEO

Ratings

–55 ~ +150

250
300
200
300

7

100

70
750
150

Unit

V

V

V
mA
mA

mW

˚C
˚C

0.45

0.7

2.5

+0.15
Ð0.1

±0.1

+0.6
Ð0.2

123

5.0

±0.2

2.5

+0.6
Ð0.2

±0.2

0.7

±0.2

2.3

±0.2

5.1

±0.5

12.9

Unit: mm

4.0

±0.2

+0.15

0.45

Ð0.1

1:Emitter

2:Collector

3:Base

EIAJ:SC–43A

TO-92-A1 Package

Electrical Characteristics (Ta=25˚C)

■

Parameter

Collector cutoff
current
Collector to emitter
voltage

2SC1473
2SC1473A
2SC1473

2SC1473A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance

*

hFE Rank classification

Symbol

I

CEO

V

CEO

V

EBO

h

FE

V

CE(sat)

f

T

C

ob

Rank P Q R

h

FE

30 ~ 100 60 ~ 150 100 ~ 220

322

Conditions

VCE = 120V, IB = 0
VCE = 120V, IB = 0

IC = 100µA, IC = 0

IE = 1µA, IC = 0

*

VCE = 10V, IC = 5mA
IC = 50mA, IB = 5mA
VCB = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz

min

200
300

30

50

7

typ80max

1
1

220

1.2

10

Unit

µA

V

V

V

MHz

pF

Transistor

2SC1473, 2SC1473A

PC — Ta IC — V

1.0

)

0.9

W

(

0.8

C

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

IC — I

B

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

0 2.01.60.4 1.20.8

Base current IB (mA

VCE=10V
Ta=25˚C

)

CE

120

100

)

mA

(

80

0.8mA

C

60

40

Collector current I

20

0

0108264

)

Collector to emitter voltage VCE (V

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.1 1 10 1000.3 3 30

Collector current IC (mA

1.2mA

1.0mA

1.4mA

V

1.6mA

CE(sat)

1.8mA

— I

25˚C

Ta=25˚C

IB=2mA

0.6mA

0.4mA

0.2mA

C

IC/IB=10

Ta=75˚C

–25˚C

)

120

100

)
mA

(

C

Collector current I

)

)
mA

(

B

Base current I

80

60

40

20

0

0 2.01.60.4 1.20.8

3.0

2.5

2.0

1.5

1.0

0.5

0

0 1.00.80.2 0.60.4

IC — V

BE

VCE=10V

25˚C

Ta=75˚C

–25˚C

Base to emitter voltage VBE (V

IB — V

BE

VCE=10V
Ta=25˚C

Base to emitter voltage VBE (V

)

)

hFE — I

C

360

FE

300

240

180

120

60

Forward current transfer ratio h

0

0.1 1 10 1000.3 3 30

Ta=75˚C

VCE=10V

25˚C

–25˚C

Collector current IC (mA

fT — I

E

160

140

)

MHz

120

(

T

100

80

60

40

Transition frequency f

20

0

–1 –3 –10 –30 –100

)

Emitter current IE (mA

VCB=10V
Ta=25˚C

)

10

)

9

pF

(

8

ob

7

6

5

4

3

2

1

Collector output capacitance C

0

Collector to base voltage VCB (V

Cob — V

1 3 10 30 100

CB

IE=0
f=1MHz
Ta=25˚C

)

323

Transistor

4

10



3

10

)



)
Ta

(

2

10

Ta=25˚C

(

CBO

I



CBO

I

10



1

0 20016040 12080

Ambient temperature Ta (˚C

I

— T a I

CBO

4

VCB=250V

10



3

10

)



)
Ta

(

2

10

Ta=25˚C

(

EBO

I



EBO

I

10



1

0 20016040 12080

)

Ambient temperature Ta (˚C

2SC1473, 2SC1473A

— Ta Area of safe operation (ASO)

EBO

VEB=5V

1000

300

)

I

CP

100

mA

(

I

C

C

30

10

3

1

Collector current I

0.3

0.1
1 10 100 10003 30 300

)

Collector to emitter voltage VCE (V

DC

Single pulse
Ta=25˚C

t=1ms

t=10ms

2SC1473A

2SC1473

)

324

Request for your special attention and precautions in using the technical information

and semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-

ment if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative character-

istics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.

(3) The products described in this material are intended to be used for standard applications or gen-

eral electronic equipment (such as office equipment, communications equipment, measuring in­struments and household appliances).
Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.

• Any applications other than the standard applications intended.

(4) The products and product specifications described in this material are subject to change without

notice for reasons of modification and/or improvement. At the final stage of your design, purchas­ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.

(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-

mum rating, the range of operating power supply voltage and heat radiation characteristics. Other­wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.

(6) When using products for which dry packing is required, observe the conditions (including shelf life

and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.

(7) No part of this material may be reprinted or reproduced by any means without written permission

from our company.

Please read the following notes before using the datasheets

A. These materials are intended as a reference to assist customers with the selection of Panasonic

semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.

B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but

there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may ap­pear in this material.

C. These materials are solely intended for a customer's individual use.

Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.

2001 MAR

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.