Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1419
DESCRIPTION
·With TO-220 package
·Large collector power dissipation
APPLICATIONS
·For medium power amplifier applicattions
PINNING
PIN DESCRIPTION
1
2
3 Emitter
Base
Collector;connected to
mounting base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 2 A
ICM Collector current-peak 3 A
PC Collector power dissipation TC=25℃ 20 W
Collector-base voltage Open emitter 50 V
Collector-emitter voltage Open base 50 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1419
CHARACTERISTICS
Tj=25℃ unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=30mA ,IB=0 50 V
(BR)CEO
(BR)CBO
(BR)EBO
V
CEsat
V
BEsat
I
CBO
I
EBO
h
FE
Collector-base breakdown voltage IC=1mA ,IE=0 50 V
Emitter-base breakdown voltage IE=1mA ,IC=0 5 V
Collector-emitter saturation voltage IC=1A; IB=0.1A 1.0 V
Base-emitter saturation voltage IC=1A; IB=0.1A 1.5 V
Collector cut-off current VCB=50V; IE=0 100
Emitter cut-off current VEB=5V; IC=0 100
μA
μA
DC current gain IC=1A ; VCE=4V 35 320
fT Transition frequency IC=0.5A ; VCE=10V 5 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1419
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
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