Datasheet 2SC1383, 2SC1384 Datasheet (Panasonic)

Transistors

2SC1383, 2SC1384

Silicon NPN epitaxial planar type

For low-frequency power amplification and driver amplification

Complementary to 2SA0683, 2SA0684

■ Features

• Low collector-emitter saturation voltage V

• Complementary pair with 2SA0683, 2SA0684

CE(sat)

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

2SC1383 V

2SC1384 60

2SC1383 V

2SC1384 50

Emitter-base voltage (Collector open) V

Collector current I

Peak collector current I

Collector power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

EBO

C

CP

C

j

stg

30 V

25 V

5V

1A

1.5 A

1W

150 °C

−55 to +150 °C

0.7

±0.1

0.45

5.9

132

+0.2
–0.1

±0.2

(1.27)(1.27)

2.54

+0.3

0.7

–0.2

±0.2

8.6

±0.5

13.5

(3.2)

±0.15

Unit: mm

4.9

±0.2

+0.2

0.45

–0.1

1: Emitter
2: Collector
3: Base

EIAJ: SC-51

TO-92L-A1 Package

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

(Base open)

Emitter-base voltage (Collector open) V

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage V

Base-emitter saturation voltage V

2SC1383 V

CBOIC

2SC1384 60

2SC1383 V

CEOIC

2SC1384 50

EBOIE

I

1

*

CBO

h

FE1

h

FE2

CE(sat)IC

BE(sat)IC

Transition frequency f

Collector output capacitance C

(Common base, input open circuited)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2.*1: Pulse measurement

2: Rank classification

*

Rank Q R S

h

FE1

85 to 170 120 to 240 170 to 340

= 10 µA, IE = 0 30 V

= 2 mA, IB = 025V

= 10 µA, IC = 05V

VCB = 20 V, IE = 0 0.1 µA

2

*

VCE = 10 V, IC = 500 mA 85 340 

VCE = 5 V, IC = 1 A 50 

= 500 mA, IB = 50 mA 0.2 0.4 V

= 500 mA, IB = 50 mA 0.85 1.20 V

VCB = 10 V, IE = −50 mA, f = 200 MHz 200 MHz

T

VCB = 10 V, IE = 0, f = 1 MHz 11 20 pF

ob

Publication date: March 2003 SJC00104CED

1

2SC1383, 2SC1384

PC  T

1.2

1.0

(W)

C

0.8

0.6

0.4

0.2

Collector power dissipation P

0

0 16040 12080

a

Ambient temperature Ta (°C)

V

 I

10

CE(sat)

C

IC / IB = 10

(V)

CE(sat)

1

0.1

0.01

Collector-emitter saturation voltage V

0.001

0.01 0.1 1 10

Ta = 75°C

25°C

−25°C

Collector current IC (A)

IC  V

1.50

1.25

(A)

1.00

C

0.75

0.50

CE

IB = 10 mA

Collector current I

0.25

0

0108264

Collector-emitter voltage VCE (V)

V

 I

100

BE(sat)

C

IC / IB = 10

(V)

BE(sat)

10

25°C

1

0.1

Ta = −25°C

75°C

Base-emitter saturation voltage V

0.01

0.01 0.1 1 10

Collector current IC (A)

T

a

= 25°C

9 mA

8 mA

7 mA

6 mA

5 mA

4 mA

3 mA

2 mA

1 mA

IC  I

B

(A)

C

1.2

1.0

0.8

0.6

0.4

VCE = 10 V

= 25°C

T

a

Collector current I

0.2

0

012108264

Base current IB (mA)

hFE  I

600

500

FE

400

300

Ta = 75°C

200

Forward current transfer ratio h

100

0

0.01 0.1 1 10

C

VCE = 10 V

25°C

−25°C

Collector current IC (A)

fT  I

200

VCB = 10 V

= 25°C

T

a

160

(MHz)

T

120

80

40

Transition frequency f

0

−1 −10 −100

Emitter current IE (mA)

2

E

50

40

(pF)

ob

C

30

20

10

(Common base circuited)

Collector output capacitance

0

1 10 100

Cob  V

CB

IE = 0
f = 1 MHz

= 25°C

T

a

120

100

(V)

CER

V

80

60

40

20

Collector-emitter voltage

(Resistor between B and E)

0

0.1 1 10 100

Collector-base voltage VCB (V)

V

 R

CER

BE

2SC1384

2SC1383

IC = 10 mA

= 25°C

T

a

Base-emitter resistance RBE (kΩ)

SJC00104CED

)

a

(T

CEO

I

= 25°C)

a

(T

CEO

I

2SC1383, 2SC1384

I

 T

4

10

3

10

2

10

10

CEO

a

VCE = 10 V

(A)

C

Collector current I

Safe operation area

10

I

CP

1

I

C

0.1

0.01

Single pulse
T

t = 1 s

= 25°C

a

t = 10 ms

2SC1383

2SC1384

1

0 16040 12080

Ambient temperature Ta (°C)

0.001

0.1 1 10 100

Collector-emitter voltage VCE (V)

SJC00104CED

3

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