Page 1
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1368
DESCRIPTION
·With TO-126 package
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN DESCRIPTION
1
2
3 Base
Emitter
Collector;connected to
mounting base
Absolute maximum ratings(Ta=25
SYMBOL PARAMETER CONDITIONS VALUE UNIT
V
CBO
V
CEO
V
EBO
IC Collector current 1.5 A
PC Collector power dissipation TC=25℃ 8 W
Collector-base voltage Open emitter 25 V
Collector-emitter voltage Open base 25 V
Emitter-base voltage Open collector 5 V
℃)
Tj Junction temperature 150 ℃
T
Storage temperature -55~150 ℃
stg
Page 2
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1368
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V
V
V
Collector-emitter breakdown voltage IC=1mA; IB=0 25 V
(BR)CEO
(BR)CBO
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
Collector-base breakdown voltage IC=50μA; IE=0 25 V
Emitter-base breakdown voltage IE=50μA; IB=0 5 V
Collector-emitter saturation voltage IC=1.5A; IB=0.15A 0.8 V
Collector cut-off current VCB=25V; IE=0 1.0 μA
Emitter cut-off current VEB=5V; IC=0 1.0 μA
DC current gain IC=0.5A ; VCE=2V 60 320
fT Transition frequency IC=0.5A ; VCE=5V 180 MHz
2
Page 3
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors 2SC1368
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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