250—1200 250—1200VCE = 12 V, IC = 2 mA
——0.75——0.75 VVCE = 12 V, IC = 2 mA
——0.5——0.5VIC = 10 mA, IB = 1 mA
—230——230—MHz VCE = 12 V, IC = 2 mA
Cob——3.5——3.5pFVCB = 10 V, IE = 0,
——1 ——1 dBVCE = 6 V, IC = 0.1 mA,
3055V
3050V
55V
100100mA
200200mW
f = 1 MHz
f = 10 Hz, R
f = 1 kHz, R
= 10 kΩ
g
= 10 kΩ
g
2
Page 3
2SC1344, 2SC1345
Small Signal h Parameters (VCE = 5V, IC = 0.1 mA, f = 270 Hz, Ta = 25°C, Emitter
common)
ItemSymbolDEFUnit
Input impedancehie110170240kΩ
Voltage feedback ratiohre9.514.516× 10
Current transfer ratiohfe340540825
Output admittancehoe12.012.513.5µS
–4
Maximum Collector Dissipation Curve
250
(mW)
200
C
150
100
50
Collector Power Dissipation P
0
700
FE
600
500
50
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
VCE = 12 V
100150
10
8
(mA)
C
6
4
2
Collector Current I
0
(mA)
Typical Output Characteristics
Collector to Emitter Voltage V
Typical Transfer Characteristics
5
VCE = 12 V
4
C
3
26
24
22
20
18
16
14
12
10
8
6
4
2 µA
IB = 0
84
12162024
CE
(V)
P
C
= 200 mW
400
300
DC Current Transfer Ratio h
200
0.01 0.02 0.05 0.1 0.20.5 1.02510 2050
Collector Current I
Ta = 75°C
25
(mA)
C
2
1
Collector Current I
0
0.20.4
Base to Emitter Voltage V
0.60.81.0
(V)
BE
3
Page 4
2SC1344, 2SC1345
Base to Emitter Voltage vs. Ambient
0.9
(V)
0.8
BE
0.7
0.6
0.5
Base to Emitter Voltage V
0.4
Ambient Temperature Ta (°C)
Emitter Input Capacitance vs.
Emitter to Base Voltage
10
(pF)
ie
5
2
Temperature
0–2020
VCE = 12 V
I
= 2 mA
C
406080
I
= 0
C
f= 1 MHz
Collector Output Capacitance vs.
Collector to Base Voltage
10
(pF)
ob
5
2
Collector Output Capacitance C
1
12
Collector to Base Voltage V
Contours of Constant Noise Figure
100
1 dB
30
(kΩ)
2 dB
g
4 dB
10
6 dB
3
8 dB
10 dB
1.0
2 dB
1 dB
6 dB
4 dB
I
= 0
E
f= 1 MHz
510
(V)
CB
10 dB
8 dB
VCE = 6 V
f = 10 Hz
Emitter Input Capacitance C
1
12
Emitter to Base Voltage V
4
510
(V)
EB
0.3
Signal Source Resistance R
0.1
0.030.10.31.03.0
0.010.0030.001
Collector Current I
(mA)
C
Page 5
2SC1344, 2SC1345
100
Contours of Constant Noise Figure
30
(kΩ)
g
10
1 dB
2 dB
4 dB
3
6 dB
8 dB
1.0
0.3
Signal Source Resistance R
0.1
0.030.10.31.03.0
0.010.0030.001
Collector Current I
Noise Figure vs. Frequency
12
10
8
6
4
Noise Figure NF (dB)
2
2 dB
1 dB
VCE = 6 V
I
C
R
8 dB
6 dB
4 dB
(mA)
C
= 0.1 mA
= 10 kΩ
g
VCE = 6 V
f = 120 Hz
100
Contours of Constant Noise Figure
VCE = 6 V
30
(kΩ)
g
f = 1 kHz
10
1 dB
3
2 dB
4 dB
1.0
8 dB
10 dB
6 dB
0.3
Signal Source Resistance R
0.1
0.030.10.31.03.0
0.010.0030.001
Collector Current I
Noise Figure vs. Collector to
Emitter Voltage
10
IC = 0.1 mA
8
f = 10 Hz
R
= 10 kΩ
g
6
4
Noise Figure NF (dB)
2
1 dB
(mA)
C
2 dB
4 dB
10 dB
8 dB
6 dB
0
201050
Frequency f (Hz)
100 2005001 k
0
215
Collector to Emitter Voltage V
102050
(V)
CE
5
Page 6
2SC1344, 2SC1345
Noise Figure vs. Collector to
Emitter Voltage
10
IC = 0.1 mA
8
f = 120 Hz
R
= 10 kΩ
g
6
4
Noise Figure NF (dB)
2
0
215
Collector to Emitter Voltage V
102050
(V)
CE
Noise Figure vs. Collector to
Emitter Voltage
10
IC = 0.1 mA
8
f = 1 kHz
R
= 10 kΩ
g
6
4
Noise Figure NF (dB)
2
0
215
Collector to Emitter Voltage V
102050
(V)
CE
6
Page 7
Unit: mm
0.60 Max
0.5 ± 0.1
4.8 ± 0.3
1.27
2.54
0.7
5.0 ± 0.2
2.3 Max
12.7 Min
3.8 ± 0.3
0.5
Hitachi Code
JEDEC
EIAJ
Weight
(reference value)
TO-92 (1)
Conforms
Conforms
0.25 g
Page 8
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URLNorthAmerica : http:semiconductor.hitachi.com/
For further information write to:
Hitachi Semiconductor
(America) Inc.
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San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
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Japan: http://www.hitachi.co.jp/Sicd/indx.htm
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Taipei Branch Office
3F, Hung Kuo Building. No.167,
Tun-Hwa North Road, Taipei (105)
Tel: <886> (2) 2718-3666
Fax: <886> (2) 2718-8180
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
Kowloon, Hong Kong
Tel: <852> (2) 735 9218
Fax: <852> (2) 730 0281
Telex: 40815 HITEC HX
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