Page 1
Transistor
2SC1318A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SA720A
Features
■
●
High collector to emitter voltage V
●
Optimum for the driver stage of a low-frequenc y and 25 to 30W
output amplifier.
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
.
CEO
Ratings
–55 ~ +150
80
70
5
1
0.5
750
150
Unit
V
V
V
A
A
mW
˚C
˚C
5.0±0.2 4.0±0.2
5.1±0.213.5±0.5
+0.2
0.45
–0.1
1.27 1.27
213
2.54±0.15
+0.2
0.45
–0.1
1:Emitter
2.3±0.2
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
Unit: mm
Electrical Characteristics (Ta=25˚C)
■
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
Rank classification
FE1
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Rank Q R S
h
FE1
85 ~ 170 120 ~ 240 170 ~ 340
Conditions
VCB = 20V, IE = 0
IC = 10µA, IE = 0
IC = 2mA, IB = 0
IE = 10µA, IC = 0
*1
VCE = 10V, IC = 150mA
VCE = 10V, IC = 500mA
IC = 300mA, IB = 30mA
IC = 300mA, IB = 30mA
*2
*2
*2
*2
VCB = 10V, IE = –50mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
80
70
5
85
40
typ
160
max
340
100
0.2
0.85
120
11
*2
Pulse measurement
0.1
0.6
1.5
20
Unit
µA
V
V
V
V
V
MHz
pF
1
Page 2
Transistor
2SC1318A
PC — Ta IC — V
1.2
)
W
(
1.0
C
0.8
0.6
0.4
0.2
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
V
— I
CE(sat)
)
10
V
(
3
CE(sat)
1
0.3
0.1
0.03
0.01
0.003
0.001
Collector to emitter saturation voltage V
1 10 100 10003 30 300
Ta=75˚C
25˚C
Collector current IC (mA
)
C
IC/IB=10
–25˚C
)
CE
1.2
1.0
)
A
(
0.8
C
0.6
0.4
Ta=25˚C
IB=–10mA
Collector current I
0.2
0
0108264
Collector to emitter voltage VCE (V
V
— I
BE(sat)
100
)
V
(
30
BE(sat)
10
3
1
Ta=–25˚C
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
1 10 100 10003 30 300
C
IC/IB=10
25˚C
75˚C
Collector current IC (A
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
)
1.2
1.0
)
A
(
0.8
C
0.6
0.4
Collector current I
0.2
0
0108264
)
Base current IB (mA
hFE — I
300
FE
250
200
150
100
50
Forward current transfer ratio h
0
1 10 100 10003 30 300
Collector current IC (mA
IC — I
Ta=75˚C
25˚C
–25˚C
B
VCE=10V
Ta=25˚C
)
C
VCE=10V
)
fT — I
200
180
)
160
MHz
(
140
T
120
100
80
60
40
Transition frequency f
20
0
–1 –3 –10 –30 –100
Emitter current IE (mA
2
E
VCB=10V
Ta=25˚C
)
50
)
45
pF
(
40
ob
35
30
25
20
15
10
5
Collector output capacitance C
0
Collector to base voltage VCB (V
Cob — V
1 3 10 30 100
CB
IE=0
f=1MHz
Ta=25˚C
4
10
3
10
)
)
Ta
(
2
10
Ta=25˚C
(
CBO
I
CBO
I
10
1
0 18060 120
)
I
— Ta
CBO
VCB=20V
Ambient temperature Ta (˚C
)
Page 3
Transistor
5
10
VCE=10V
4
10
)
3
)
10
Ta
(
Ta=25˚C
(
CEO
2
I
10
CEO
I
10
1
0 1406020 80 12040 100
Ambient temperature Ta (˚C
I
CEO
2SC1318A
— Ta
)
3
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