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Transistors
2SC1047
Silicon NPN epitaxial planar type
For high-frequency amplification
5.0
±0.2
Unit: mm
4.0
±0.2
■ Features
2.5
+0.6
–0.2
±0.2
0.7
±0.2
2.3
±0.2
5.1
±0.5
12.9
+0.15
0.45
–0.1
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
T
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Emitter-base voltage (Collector open) V
Collector current I
Collector power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
EBO
C
C
j
−55 to +150 °C
stg
30 V
20 V
3V
20 mA
400 mW
150 °C
0.45
0.7
2.5
+0.15
–0.1
±0.1
+0.6
–0.2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Emitter-base voltage (Collector open) V
CBOIC
EBOIE
Base-emitter voltage V
Forward current transfer ratio
*
h
Common-emitter reverse transfer C
capacitance
Transition frequency f
Power gain G
Noise figure NF VCB = 6 V, IE = −1 mA, f = 100 MHz 3.3 5 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank C D
h
FE
65 to 160 100 to 260
= 10 µA, IE = 030V
= 10 µA, IC = 03V
VCE = 6 V, IC = 1 mA 0.72 V
BE
VCE = 6 V, IC = 1 mA 65 260
FE
VCB = 6 V, IE = −1 mA, f = 10.7 MHz 0.8 1 pF
re
VCB = 6 V, IE = −1 mA, f = 200 MHz 450 650 MHz
T
VCB = 6 V, IE = −1 mA, f = 100 MHz 20 dB
P
Publication date: November 2002 SJC00099CED
1
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2SC1047
PC T
500
400
(mW)
C
300
200
100
Collector power dissipation P
0
0 16040 12080
Ambient temperature Ta (°C)
IC V
30
Ta = 75°C
25°C
−25°C
25
20
(mA)
C
15
10
Collector current I
5
BE
a
VCE = 6 V
IC V
12
10
8
(mA)
C
6
4
Collector current I
2
0
012186
Collector-emitter voltage VCE (V)
V
I
CE(sat)
25°C
Ta = 75°C
−25°C
(V)
CE(sat)
100
10
1
0.1
CE
Ta = 25°C
IB = 100 µA
80 µA
60 µA
40 µA
20 µA
C
IC / IB = 10
IC I
12
10
(mA)
C
VCE = 10 V
8
6
4
B
6 V
Collector current I
2
0
0 12060 180
Base current IB (µA)
hFE I
360
300
FE
240
180
120
Forward current transfer ratio h
60
C
Ta = 75°C
25°C
−25°C
Ta = 25°C
VCE = 6 V
0
0 2.01.60.4 1.20.8
Base-emitter voltage VBE (V)
fT I
1 200
1 000
(MHz)
800
T
600
400
Transition frequency f
200
0
− 0.1 −1 −10 −100
E
VCB = 10 V
6 V
Emitter current IE (mA)
2
Ta = 25°C
Collector-emitter saturation voltage V
0.01
0.1 1 10 100
Collector current IC (mA)
Zrb I
120
100
(Ω)
rb
80
60
40
20
Reverse transfer impedance Z
0
− 0.1 −1 −10
E
f = 2 MHz
T
VCE = 6 V
= 25°C
a
10 V
Emitter current IE (mA)
SJC00099CED
0
0.1 1 10 100
Collector current IC (mA)
Cre V
2.4
(pF)
re
2.0
C
1.6
1.2
0.8
0.4
Common-emitter reverse transfer capacitance
0
0.1 1 10 100
CE
IC = 1 mA
f = 10.7 MHz
= 25°C
T
a
Collector-emitter voltage VCE (V)
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2SC1047
Cob V
1.2
(pF)
ob
1.0
C
0.8
0.6
0.4
0.2
Collector output capacitance
(Common base, input open circuited)
0
030252051510
CB
IE = 0
f = 1 MHz
T
Collector-base voltage VCB (V)
bie g
20
yie = gie + jb
VCE = 10 V
18
16
−2 mA
14
(mS)
ie
12
10
−1 mA
8
58
= − 0.5 mA
E
6
I
Input susceptance b
4
2
0
25
25
f = 10.7 MHz
015936 12
ie
ie
−4 mA
100
58
Input conductance gie (mS)
= 25°C
a
150
−7 mA
100
GP I
40
35
30
25
(dB)
P
20
15
Power gain G
10
5
0
− 0.1 −1 −10 −100
E
VCE = 10 V
6 V
f = 100 MHz
= 50 Ω
R
g
= 25°C
T
a
Emitter current IE (mA)
bre g
0
yre = gre + jb
VCE = 10 V
−1
(mS)
re
−2
−3
−4
−5
Reverse transfer susceptance b
−6
− 0.5 0− 0.1− 0.4 − 0.2− 0.3
re
re
−1 mA
−4 mA
IE = −7 mA
f = 150 MHz
100
Reverse transfer conductance gre (mS)
NF I
12
10
8
6
4
Noise figure NF (dB)
2
0
− 0.1 −1 −10 −100
VCE = 6 V, 10 V
E
f = 100 MHz
= 50 Ω
R
g
= 25°C
T
a
Emitter current IE (mA)
bfe g
100
10.7
100
100
fe
25
58
−4 mA
yfe = gfe + jb
VCE = 10 V
58
fe
10.7
25
58
0
− 0.4 mA
−1 mA
−20
(mS)
fe
−40
−60
−80
−100
Forward transfer susceptance b
−120
150
−2 mA
150
f = 15 MHz
= −7 mA
I
E
0 1008020 6040
Forward transfer conductance gfe (mS)
boe g
1.2
−1 mA
1.0
= − 0.5 mA
−4 mA
E
I
(mS)
0.8
oe
0.6
0.4
Output susceptance b
0.2
0
0 0.50.40.1 0.30.2
58
25
f = 10.7 MHz
Output conductance goe (mS)
−2 mA
−7 mA
oe
100
yoe = goe + jb
VCE = 10 V
150
oe
SJC00099CED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
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