Datasheet 2SA778A, 2SA778 Datasheet (HIT)

2SA778(K), 2SA778A(K)

Application

High voltage medium speed switching

Outline

TO-92 (1)

Silicon PNP Epitaxial

1. Emitter

2. Collector

3. Base

3

2

1

2SA778(K), 2SA778A(K)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SA778(K) 2SA778A(K) Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Collector power dissipation P

CBO

CEO

EBO

C

C

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

2SA778(K) 2SA778A(K)

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Collector cutoff current I

Emitter cutoff current I
DC current transfer ratio h

Collector to emitter
saturation voltage

Base to emitter
saturation voltage

Collector output
capacitance

Gain bandwidth product f

Turn on time t
Turn off time t

Storage time t

V

(BR)CBO

V

(BR)CER

CBO

–150 — — –180 — — V IC = –50 µA, IE = 0

–150 — — –180 — — V IC = –50 µA,

— — –1.0 — — — µAVCB = –100 V, IE = 0
— — — — — –1.0 µAVCB = –150 V, IE = 0
— — –1.0 — — –1.0 µAVEB = –5 V, IC = 0
30 100 — 40 100 200 VCE = –3 V,

— –0.3 –1.0 — –0.3 –1.0 V IC = –15 mA,

— –0.77 –1.0 — –0.77 –1.0 V IC = –15 mA,

V

V

EBO

FE

CE(sat)

BE(sat)

Cob — — 10 — — 10 pF VCB = –10 V, IE = 0,

T

on

off

stg

— 50 — — 50 — MHz VCE = –3 V,

— 135 — — 135 — ns VCC = –10.3 V
— 1.7 — — 1.7 — µsIC = 10 IB1 = –10

— — 1.0 — — 1.0 µsVCC = –10 V,

–150 –180 V
–150 –180 V
–5 –5 V
–50 –50 mA
200 200 mW

R

= 30 kΩ

BE

I

= –15 mA

E

I

= –1 mA

B

I

= –1 mA

B

f = 1 MHz

I

= –15 mA

C

I

= –10 mA

B2

I

=–17 mA

C

I

= –1mA,

B1

I

= –12 mA

B2

2

2SA778(K), 2SA778A(K)

t

on

P.G.
tr, t

15ns

≤

f

PW 5µs

≤

duty ratio 10%

≤

Input

–13 V

Output

Switching Time Test Circuit

, t

Test Circuit

off

6 k

D.U.T.

6 k

0.002 0.002

+–+–

6 V –10.3 V

505050

Response Waveform

0

0

10%

10%

t

d

90%

t

on

CRT

1 k

UnitR : Ω

C : µF

90%

t

stg

t

off

`

10%

90%

P.G.

≤

, t

5ns

t

r

f

≥

PW 5µs
duty ratio = 50%

Switching Time Test Circuit

Test Circuit

t

stg

0.1

2.4 k

D.U.T

0.002 0.002

50

–++–

Response Waveform

+7 V

Input

0

10%

0

Output

t

stg

510

5050

10%

0.1
CRT

16

–10 V–3 V

UnitR : Ω

C : µF

3

2SA778(K), 2SA778A(K)

Maximum Collector Dissipation Curve

300

200

100

Collector power dissipation Pc (mW)

0 50 100 150

Ambient Temperature Ta (°C)

Typical Output Characteristics (2)

–0.5

–0.4

(mA)

C

–0.3

–0.2

–4

–3

–2

Typical Output Characteristics (1)

–50

–40

(mA)

C

–30

–20

–0.8

–0.7

–0.9

–1.0

–0.6

–0.5

–0.4

–0.3

–0.2

P

C

= 200 mW

–0.15
–0.1

–10

Collector Current I

–0.05 mA

IB = 0

0 –1–2–3–4–5

Collector to Emitter Voltage V

CE

(V)

Collector Cutoff Current vs.

Collector to Base Voltage

–300

125

–100

(nA)

–30

CBO

100

75

–10

–3

50

–0.1

Collector Current I

–1 µA

IB = 0

0 –40 –80 –120 –160 –200

Collector to Emitter Voltage VCE (V)

–1.0

Collector Current I

Ta = 25°C

–0.3

Collector to Base Voltage VCB (V)

–200–160–120–80–400

4

2SA778(K), 2SA778A(K)

DC Current Transfer Ratio vs.

Collector Current

140

VCE = –3 V

FE

120

75
50

100

25

0

80

60

DC current transfer ratio h

40

Ta = –25°C

–1 –2 –5 –10 –20 –50

Collector Current I

(mA)

C

Base to Emitter Saturation Voltage vs.

Collector Current

–0.9

IC = 10 IB

–0.8

–25

0

–0.7

(V)

(sat)
BE

–0.6

V

25
50

Ta = 75°C

–0.5

Base to emitter saturation voltage

–0.4

–0.1 –0.2 –0.5 –1.0 –2 –5 –10 –20 –50

Collector Current I

(mA)

C

Collector to Emitter Saturation Voltage vs.

Collector Current

–2.0

IC = 10 IB

–1.6

–1.2

(V)

(sat)
CE

–0.8

V

–0.4

Collector to emitter saturation voltage

0
–0.1–0.2 –0.5 –1.0 –2 –5 –10 –20 –50

Collector Current I

C

Input and Output Capacitance vs.

Voltage

(pF)

(pF)

ob

12

Cib (IC = 0)

10

ib

f = 1 MHz

8

6

Cob (IE = 0)

4

2

Emitter input capacitance C

Collector output capacitance C

0
–0.5 –1.0 –2 –5 –10 –20 –50

Collector to Base Voltage VCB (V)

Emitter to Base Voltage V

(mA)

EB

(V)

5

2SA778(K), 2SA778A(K)

Gain Bandwidth Product vs.

Collector Current

60

VCE = –3 V

50

(MHz)

T

40

Switching Time vs. Collector Current

5

2

1.0

IC = 10 IB1 = –10 I

t

stg

B2

t

off

0.5

30

20

10

Gain bandwidth product f

0
–0.5 –1.0 –2 –5 –10 –20 –50

Collector Current I

(mA)

C

0.2

0.1

0.05

Switching time t (µs)

0.02

0.01
–0.5–1.0 –2 –5 –10 –20 –50

Collector Current I

t

on

t

d

(mA)

C

6

Unit: mm

0.60 Max

0.5 ± 0.1

4.8 ± 0.3

1.27

2.54

0.7

5.0 ± 0.2

2.3 Max

12.7 Min

3.8 ± 0.3

0.5

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

TO-92 (1)
Conforms
Conforms

0.25 g

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