Page 1
BL Galaxy Electrical Production specification
Small Signal MOSFET Transistor 2N7002T
FEATURES
z Low on-resistance.
z Low gate threshold voltge.
z Low input capacitance.
z Fast switching speed.
z Low input/output leakage.
Pb
Lead-free
APPLICATIONS
z N-channel enhancement mode effect transistor.
z Switching application. SOT-523
ORDERING INFORMATION
Type No. Marking Package Code
2N7002T 72 SOT-523
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
V
DSS
V
DGR
V
GSS
I
D
P
D
R
θJA
TJ, Tstg Junction and Storage Temperature -55-150
Drain-Source voltage 60 V
Drain-Gate voltage(RGS≤1MΩ) 60 V
Gate -Source voltage - continuous
-Non Repetitive (t
Maximum Drain current -continuous
-Pulsed
Power Dissipation 150 mW
Thermal resistance,Junction-to-Ambient 833
<50μs)
p
±20
±40
115
800
V
mA
℃/W
℃
Document number: BL/SSMTH016 www.galaxycn.com
Rev.A 1
Page 2
BL Galaxy Electrical Production specification
V
V
V
V
Small Signal MOSFET Transistor 2N7002T
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-body Leakage Forward
Reverse
Zero Gate Voltage Drain Current I
On-state Drain Current I
Drain-Source on-voltage V
Forward transconductance g
Static drain-Source on-resistance R
Drain-Source diode forward
voltage
(BR)DSSVGS
GS(th)
I
GSS
DSS
D(On)
DS(ON)
FS
DS(ON)
V
SD
=0V,ID=10μA 60
V
VDS=VGS, ID=-250μA 1 2.0
VDS=0V, VGS=20V
V
=0V, VGS=-20V
DS
10
-10
nA
VDS=60V, VGS=0V 1
μA
VDS=60V,VGS=0V,Tj=125℃
500
VGS=10V, VDS=7.5V 0.5 1.0 A
VGS=10V,ID=500mA
V
=5V,ID=50mA
GS
0.6
0.09
3.75
1.5
V
VDS=10V,ID=200mA 80 mS
=10V,ID=500mA
GS
=10V,ID=500mA,Tj=100℃
GS
=5.0V,ID=50mA
GS
=5.0V,ID=50mA, Tj=100℃
GS
1.2
1.7
1.7
2.4
7.5
13.5
7.5
13.5
Ω
VGS=0V,ID=115mA 0.88 1.5 V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-On Delay Time t
Turn-Off Delay Time t
ISS
OSS
RSS
D(ON)
D(OFF)
VDS=25V,VGS=0V,f=1.0MHz
VDD=30V, ID=0.2A,
R
=150Ω, VGS=10V,
L
R
= 25Ω
GEN
22 50
11 25
pF
2 5
7.0 20 ns
11 20 ns
Document number: BL/SSMTH016 www.galaxycn.com
Rev.A 2
Page 3
BL Galaxy Electrical Production specification
Small Signal MOSFET Transistor 2N7002T
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSMTH016 www.galaxycn.com
Rev.A 3
Page 4
BL Galaxy Electrical Production specification
Small Signal MOSFET Transistor 2N7002T
PACKAGE OUTLINE
Plastic surface mounted package SOT-523
K
A
B
C
Dim Min Max
SOT-523
A 1.5 1.7
B 0.75 0.85
C 0.6 0.8
D
G
H
SOLDERING FOOTPRINT
D 0.15 0.3
J
G 0.9 1.1
H 0.02 0.1
J 0.1Typical
K 1.45 1.75
All Dimensions in mm
Unit : mm
PACKAGE INFORMATION
Device Package Shipping
2N7002T SOT-523 3000/Tape&Reel
Document number: BL/SSMTH016 www.galaxycn.com
Rev.A 4
Page 5
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