Datasheet 2N7002KW Datasheet (Fairchild)

May 2011

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Features

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Pb Free/RoHS Compliant

• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101

D

2N7002KW — N-Channel Enhancement Mode Field Effect Transistor

S

SOT-323

G

Marking : 7KW

Absolute Maximum Ratings * T

= 25°C unless otherwise noted

A

Symbol Parameter Value Units

V

DSS

V

GSS

I

D

T

T

STG

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Drain-Source Voltage 60 V
Gate-Source Voltage ±20 V

Maximum Drain Current - Continuous

T

- Pulsed
Operating Junction Temperature Range -55 to +150 °C

J

Storage Temperature Range -55 to +150 °C

= 100°C

J

310
195

1.2

mA
mA

A

Thermal Characteristics

Symbol Parameter Value Units

P

R

θJA

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size

Total Device Dissipation

D

Derating above TA = 25°C
Thermal Resistance, Junction to Ambient * 410 °C/W

300

2.4

mW

mW/°C

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev . A0 1

2N7002KW — N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics

BV

I

DSS

I

GSS

Drain-Source Breakdown Voltage V

DSS

Zero Gate Voltage Drain Current V

Gate-Body Leakage V

= 0V, ID =10μA60 V

GS
DS

V

DS
GS

= 60V, V
= 60V, V

= ±20V, V

= 0V

GS

= 0V, TJ = 125°C

GS

= 0V ±10 μA

DS

1.0

0.5

μA

mA

On Characteristics (Note1)

V

GS(th)

R

DS(ON)

V

DS(ON)

I

D(ON)

g

Gate Threshold Voltage VDS = VGS, ID = 250μA1.12.1V
Static Drain-Source

On-Resistance

VGS = 10V, ID = 500mA
VGS = 10V , ID = 500mA, TJ = 100°C
VGS = 5V, ID = 50mA

= 5V, ID = 50mA, TJ = 100°C

V

GS

Drain-Source On-Voltage VGS = 10V, ID = 500mA

VGS = 5V, ID = 50mA
On-State Drain Current VGS = 10V, V
Forward Transconductance VDS = 2V, ID = 0.2A 80 mS

FS

= 2V 500 mA

DS

1.6

2.4
2
3

3.75

1.5

Ω
Ω
Ω
Ω

V
V

Dynamic Characteristics

C
C
C

Input Capacitance

iss

Output Capacitance 25 pF

oss

Reverse Transfer Capacitance 5 pF

rss

VDS = 25V, VGS= 0V, f = 1.0MHz

50 pF

Switching Characteristics

t

D(ON)

t

D(OFF)

Turn-On Delay Time
Turn-Off Delay Time 60

= 30V, RL = 150Ω, VGS= 10V,

V

DD

= 200mA, R

I

D

GEN

= 25Ω

20

ns
ns

Drain-Source Diode Characteristics and Maximum Ratings

I

Maximum Continuous Drain-Source Diode Forward Current 115 mA

S

I

V

Maximum Pulsed Drain-Source Diode Forward Current 0.8

SM

Drain-Source Diode Forward

SD

VGS = 0V, IS = 115mA 1.1

Voltage

A
V

Note1 : 1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2. 0% .

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev . A0 2

Typical Performance Characteristics

2N7002KW — N-Channel Enhancement Mode Field Effect Transistor

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Temperature.

2.4

2.1

1.8

1.5

1.2

0.9

. Drain-Source Current (A)

D

0.6

I

0.3

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

8V

7V

VGS = 10V

9V

VDS. Drain-Source Voltage (V)

Figure 3. On-Resistance Variation with

Gate Voltage and Drain Current.

3.0

2.5

(Ω)

2.0

(on),

DS

R

1.5

Drain-Source On-Resistance

1.0

0.5

0.0 0.5 1.0 1.5 2.0

VGS = 4V

4.5V

5V

6V

8V

ID. Drain-Source Current(A)

9V

6V

5V

4V

VGS = 3V

VGS = 7V

10V

2.2

2.0

1.8

1.6

(Ω)

1.4

(on)

1.2

DS

R

1.0

0.8

0.6

Normalized Drain-Source On-Resistance

0.4

-50 0 50 100 150

VGS = 10V

= 500mA

I

D

VGS = 5V

= 50mA

I

D

TJ. Junction Temperature (oC)

Figure 4. On-Resistance Variation with

Drain Current and Temperature.

5

VGS = 10V

4

3

(Ω)

(on)

DS

2

R

1

Drain-Source On-Resistance

0

0.0 0.5 1.0 1.5 2.0

TA = 125oC

TA = 25oC

TA = -55oC

ID. Drain Current (A)

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature.

3.5

3.0

2.5

2.0

VDS = 10V

TA = 25(oC)

TA = -55(oC)

TA = 125(oC)

1.5

1.0

. Drain-Source Current (A)

D

I

0.5

0.0
012345678910

VGS. Gate-Source Voltage (V)

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev . A0 3

1.10

1.05

1.00

0.95

Vth.

0.90

0.85

0.80

0.75

-25 0 25 50 75 100 125

Normalized Gate - Source Threshold Voltage (V)

ID = 0.25mA

ID = 1mA

TJ. Junction Temperature (oC)

VDS = V

GS

Typical Performance Characteristics (Continued)

2N7002KW — N-Channel Enhancement Mode Field Effect Transistor

Figure 7. Breakdown Voltage Variation

with Temperature

1.100

ID=250uA

1.075

1.050

1.025

1.000

0.975

BVdss , Normalized

0.950

Drain Source Breakdown Voltage

0.925

-25 0 25 50 75 100 125

TJ, Junction Temperatture(o C)

Figure 9. Capacitance Characteristics.

100

10

. Capacitance (pF)

RSS

C

OSS,

C

ISS,

C

f = 1M H Z
V

= 0V

GS

1

1 10 100

VDS. Drain to Source Voltage (V)

Figure 8. Body Diode Forward Voltage Variation

with Source Current and Temperature.

10000

VGS = 0 V

1000

100

10

TA=125oC

TA=25oC

1

. Reverse Drain Current [mA]

S

I

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TA=-55oC

VSD. Body Diode Forward Voltage [V]

Figure 10. Gate Charge Characteristics.

10

VDS = 25V

8

C

ISS

6

4

C

OSS

C

RSS

. Gate-Source Voltage (V)

GS

V

2

0

0.00.20.40.60.81.0

ID = 500mA

ID = 115mA

ID = 280mA

Qg. Gate Cha r g e (nC)

Figure 11. Maximum Safe Operating Area.

Figure 12. Transient Thermal Response Curve.

1

0

10

-1

10

R

Limit

-2

10

, Drain Current [A]

D

I

-3

10

-4

10

-1

10

DS(on)

0

10

100ms

1S

DC

Vgs=1 0 V
Single Pulse
Rthja=410

= 25 oC

T

a

VDS, Drain-Source Voltage [V]

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev . A0 4

100μs

1ms

10ms

o

C/W

1

10

2

10

50%

Rthja(t)=r(t)*Rthja

20%

0.1

10%

5%

2%

D=1%

Single Pulse

r(t), Normalized Transient Thermal Resistance

0.01
1E-4 1E-3 0.01 0.1 1 10 100 1000

Rthja=410

o

C/W

t1, time(sec)

Physical Dimensions

2N7002KW — N-Channel Enhancement Mode Field Effect Transistor

SOT-323

2.00±0.20

3°

1.25±0.10 2.10±0.10

1.00±0.10

0.275±0.100

0.135

+0.04
–0.01

0.10 Min

0.95±0.15

0.05

3°

+0.05
–0.02

0.90

±0.10

1.30±0.10

Dimensions in Millimeters

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7002KW Rev . A0 5

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Formative /

In Design

Preliminary First Production

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Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change
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Rev. I53

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