Datasheet 2N7002-G Specification

Supertex inc.

N-Channel Enhancement-Mode
Vertical DMOS FETs

2N7002

Features

► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low C

and fast switching speeds

ISS

► Excellent thermal stability
► Integral source-drain diode
► High input impedance and high gain

Applications

► Motor controls
► Converters
► Ampliers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

Part Number Package Option Packing

2N7002-G TO-236AB (SOT-23) 3000/Reel

-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

Absolute Maximum Ratings

Parameter Value

General Description

The Supertex 2N7002 is an enhancement-mode (normally­off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefcient

inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.

Product Summary

BV

DSX

/BV

(V)

DGS

R

DS(ON)

(max)

I

D(ON)

(min)

60V 7.5Ω 500mA

Pin Conguration

DRAIN

Drain-to-source voltage BV

Drain-to-gate voltage BV

DSS

DGS

Gate-to-source voltage ±30V

Operating and storage temperature -55°C to +150°C

Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.

Typical Thermal Characteristics

Package θ

TO-236AB (SOT-23) 203OC/W

* Mounted on FR4 board; 25mm x 25mm x 1.57mm

Doc.# DSFP-2N7002
C062813

ja

SOURCE

GATE

TO-236AB (SOT-23)

Product Marking

702W

Package may or may not include the following marks: Si or

W = Code for week sealed
= “Green” Packaging

TO-236AB (SOT-23)

Supertex inc.

www.supertex.com

Supertex inc.

Thermal Characteristics

2N7002

Package

I

D

(continuous)

†

I

D

(pulsed)

Power Dissipation

@TA = 25OC

†

I

DR

I

DRM

TO-236AB 115mA 800mA 0.36W 115mA 800mA

Notes:

(continuous) is limited by max rated Tj.

† I

D

Electrical Characteristics (T

= 25°C unless otherwise specied)

A

Sym Parameter Min Typ Max Units Conditions

BV

V

∆V

R

GS(th)

GS(th)

I

GSS

I

DSS

I

D(ON)

DS(ON)

DSS

Drain-to-Source breakdown voltage 60 - - V VGS = 0V, ID = 10µA

Gate threshold voltage 1.0 - 2.5 V VGS = VDS, ID = 250µA

Change in V

with temperature - - -5.5 mV/OC VGS = VDS, ID = 250µA

GS(th)

Gate body leakage current - - ±100 nA VGS = ±20V, VDS = 0V

Zero Gate voltage drain current

- - 1.0

µA

- - 500

VGS = 0V, VDS = Max rating

VGS = 0V, VDS = 0.8Max rating,
TA = 125OC

On-state Drain current 500 - - mA VGS = 10V, VDS = 25V

Static Drain-to-Source
on-state resistance

- - 7.5

Ω

- - 7.5 VGS = 10V, ID = 500mA

VGS = 5.0V, ID = 50mA

∆R

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

t

(ON)

t

(OFF)

V

SD

t

rr

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Change in R

with temperature - - 1.0 %/OC VGS = 10V, ID = 500mA

DS(ON)

Forward transconductance 80 - - mmho VDS = 25V, ID = 500mA

Input capacitance - - 50

Common Source output capacitance - - 25

pF

Reverse transfer capacitance - - 5.0

Turn-on time - - 20

ns

Turn-off time - - 20

Diode forward voltage drop - 1.2 - V VGS = 0V, ISD = 200mA

Reverse recovery time - 400 - ns VGS = 0V, ISD = 800mA

Switching Waveforms and Test Circuit

INPUT

10V

0V

10%

t

d(ON)

t

(ON)

t

r

90%

t

d(OFF)

t

(OFF)

Pulse

Generator

R

GEN

t

f

VGS = 0V,
VDS = 25V,
f = 1.0MHz

VDD = 30V, ID = 200mA,
R

= 25Ω

GEN

VDD

R

L

OUTPUT

OUTPUT

Doc.# DSFP-2N7002
C062813

VDD

0V

10%

90%

90%

10%

2

INPUT

D.U.T.

www.supertex.com

Supertex inc.

Typical Performance Curves

Saturation Characteristics

Output Characteristics

2N7002

2.0

1.6

1.2

(amperes)

0.8

D

I

0.4

0

0 10 20 30 40 50

V

(volts)

DS

Transconductance vs. Drain Current

0.5

V

= 25V

DS

0.4

0.3

(seimens)

FS

0.2

G

TA = -55OC

25OC

125OC

V

9V

8V

7V

6V

5V

4V
3V

GS

= 10V

2.0

1.6

1.2

(amperes)

0.8

D

I

0.4

0

0 2 4 6 8 10

V

(volts)

DS

Power Dissipation vs. Case Temperature

0.5

0.4

0.3

SOT-23

(watts)

D

P

0.2

V

= 10V

GS

9V

8V

7V

6V

5V

4V

3V

0.1

0

0 0.2 0.4 0.6 0.8 10

ID (amperes)

Maximum Rated Safe Operating Area

1.0

SOT-23 (pulsed)

SOT-23 (DC)

0.1

(amperes)

D

I

0.01

TA = 25OC

0.001

0.1 1.0 10 100

V

(volts)

DS

0.1

0

0 25 50 75 100 125 150

TC (OC)

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

Thermal Resistance (normalized)

0

0.001 0.01 0.1 1.0 10

SOT-23

= 25OC

T

A

= 0.36W

P

D

(seconds)

t

p

Doc.# DSFP-2N7002
C062813

3

www.supertex.com

Supertex inc.

Typical Performance Curves (cont.)

Variation with Temperature

BV

1.1

1.0

(normalized)

DSS

BV

DSS

On-Resistance vs. Drain Current

10

V

= 5.0V

8

GS

V

6

(ohms)

4

DSS(ON)

R

2

GS

2N7002

= 10V

0.9

-50 0 50 100 150

T

(OC)

j

2.0

1.6

1.2

(amperes)

0.8

D

I

Transfer Characteristics

V

= 25V

DS

T

= -55

A

O

C

125

0.4

0

0 2 4 6 8 10

V

GS (volts)

Capacitance vs. Drain-to-Source Voltage

50

f = 1.0MHz

0

0 0.5 1.0 1.5 2.0 2.5

ID (amperes)

V

and R

(th)

1.4

1.2

O

C

25

1.0

(normalized)

GS(th)

V

O

C

0.8

0.6

-50 0 50 100 150

Variation with Temperature

DS

R

@ 10V, 0.5A

DS(ON)

V

@ 1.0mA

GS(th)

2.0

1.6

1.2

0.8

0.4

0

(normalized)

DS(ON)

R

Tj (OC)

Gate Drive Dynamic Characteristics

10

V

= 10V

8

DS

C (picofarads)

Doc.# DSFP-2N7002
C062813

C

ISS

25

C

OSS

C

0

0 10 20 30 40

V

(volts)

DS

RSS

6

(volts)

GS

V

4

2

30 pF

0

0 0.2 0.4 0.6 0.8 1.0

V

= 40V

DS

QG (nanocoulombs)

90 pF

4

www.supertex.com

3-Lead TO-236AB (SOT-23) Package Outline (K1)

2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch

D

3

E

E1

2N7002

0.25

1

e

e1

2

b

Top View

A

A2

A

Seating

Plane

A1

Side View

A

L

L1

View B

View A - A

Gauge

Plane

Seating

Plane

View B

Symbol A A1 A2 b D E E1 e e1 L L1 θ

Dimension

(mm)

NOM - - 0.95 - 2.90 - 1.30 0.50 -

MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8

JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.

Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.

MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20

0.95
BSC

1.90

BSC

0.20

†

0.54

REF

O

0

O

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.

Doc.# DSFP-2N7002
C062813

5

Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: [phone]

www.supertex.com