Datasheet 2N7002F Datasheet (Philips) [ru]

2N7002F

N-channel TrenchMOS FET

Rev. 03 — 28 April 2006 Product data sheet

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.

1.2 Features

■ Logic level threshold compatible ■ Very fast switching

■ Surface-mounted package ■ TrenchMOS technology

1.3 Applications

■ Logic level translator ■ High-speed line driver

1.4 Quick reference data

■ VDS≤ 60 V ■ ID≤ 475 mA

■ R

≤ 2 Ω ■ P

DSon

≤ 0.83 W

tot

2. Pinning information

Table 1: Pinning

Pin Description Simplified outline Symbol

1 gate (G)
2 source (S)
3 drain (D)

12

3

SOT23

G

mbb076

D

S

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

2N7002F TO-236AB plastic surface-mounted package; 3 leads SOT23

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

V

GSM

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage 25 °C ≤ Tj≤ 150 °C - 60 V
drain-gate voltage (DC) 25 °C ≤ Tj≤ 150 °C; RGS=20kΩ -60V
gate-source voltage - ±30 V
peak gate-source voltage tp≤ 50 µs; pulsed; duty cycle = 25 % - ±40 V
drain current Tsp=25°C; VGS= 10 V; see Figure 2 and 3 - 475 mA

= 100 °C; VGS= 10 V; see Figure 2 - 300 mA

T

sp

peak drain current Tsp=25°C; pulsed; tp≤ 10 µs; see Figure 3 - 1.9 A
total power dissipation Tsp=25°C; see Figure 1 - 0.83 W
storage temperature −65 +150 °C
junction temperature −65 +150 °C

source current Tsp=25°C - 475 mA
peak source current Tsp=25°C; pulsed; tp≤ 10 µs - 1.9 A

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 2 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

------------------------

P

tot 25 C°()

100 %×= I

03aa17

T

(°C)

sp

Fig 1. Normalized total power dissipation as a

function of solder point temperature

10

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

-------------------- -

I

D25 C

()

100 %×=

°

03aa25

T

(°C)

sp

Fig 2. Normalized continuous drain current as a

function of solder point temperature

03ai11

I

D

(A)

1

-1

10

-2

10

1 10 10

Limit R

DSon

= V

/ I

DS

D

tp =

10 µs

100 µs

DC

VDS (V)

1 ms
10 ms
100 ms

Tsp=25°C; IDM is single pulse

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

2

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 3 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

R

th(j-a)

[1] Mounted on a printed-circuit board; minimum footprint; vertical in still air

thermal resistance from junction to solder point see Figure 4 - - 150 K/W
thermal resistance from junction to ambient

[1]

- - 350 K/W

3

10

Z

th(j-sp)

(K/W)

2

10

δ =

0.5

0.2

0.1

10

0.05

0.02
single pul se

1

-5

10

-4

10

-3

10

-2

10

-1

10

1 10

t

(s)

p

Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration

003aab358

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 4 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

6. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

drain-source breakdown
voltage

V

I

DSS

I

GSS

R

GS(th)

DSon

gate-source threshold voltage ID= 0.25 mA; VDS=VGS; see Figure 9 and 10

drain leakage current VDS=48V; VGS=0V

gate leakage current VGS= ±15 V; VDS= 0 V - 10 100 nA
drain-source on-state

resistance

Dynamic characteristics

Q
Q

Q
C
C
C
t
t

G(tot)
GS

GD
iss
oss
rss

on
off

total gate charge
gate-source charge - 0.1 - nC
gate-drain charge - 0.27 - nC
input capacitance VGS=0V; VDS= 10 V; f = 1 MHz;
output capacitance - 6.8 30 pF
reverse transfer capacitance - 3.5 10 pF
turn-on time VDS=50V; RL= 250 Ω; VGS=10V;
turn-off time - 11 15 ns

Source-drain diode

V

SD

t

rr

Q

r

source-drain voltage IS= 300 mA; VGS= 0 V; see Figure 13 - 0.85 1.5 V
reverse recovery time IS= 300 mA; dIS/dt = −100 A/µs; VGS=0V - 30 - ns
recovered charge - 30 - nC

ID=10µA; VGS=0V

=25°C 60--V

T

j

= −55 °C 55--V

T

j

=25°C 1 2 2.5 V

T

j

= 150 °C 0.6 - - V

T

j

= −55 °C - - 2.75 V

T

j

=25°C - 0.01 1 µA

T

j

= 150 °C --10µA

T

j

VGS= 10 V; ID= 500 mA; see Figure 6 and 8

=25°C - 0.78 2 Ω

T

j

= 150 °C - 1.45 3.7 Ω

T

j

= 4.5 V; ID= 75 mA; see Figure 6 and 8 - 1.2 4 Ω

V

GS

= 300 mA; VDS=30V; VGS=10V;

I

D

see

Figure 11 and 12

- 0.69 - nC

- 3150pF

see

Figure 14

- 2.5 10 ns

R

=50Ω; RGS=50Ω

G

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 5 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

V

03ai13

DS

4.5

4

3.5VGS (V) =

(V)

1

I

D

(A)

0.8

0.6

0.4

0.2

0

0 0.5 1 1.5 2

10 5

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

03ai16

(A)

1

I

D

0.8

4.5

03ai15

(A)

I

D

5

10

5000

R

DSon

(mΩ)

4000

3000

2000

1000

0

0 0.2 0.4 0.6 0.8 1

=25°C

j

VGS (V) =

4

Fig 6. Drain-source on-state resistance as a function

of drain current; typical values

2.4

a

1.8

03aa28

0.6

0.4

0.2

0

0246

Tj = 150 °C

Tj=25°C and 150 °C; VDS>ID× R

25 °C

V

DSon

(V)

GS

Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

1.2

0.6

0

-60 0 60 120 180

R

DSon

=

a

------------------------------

R

DSon 25 C°()

T

(°C)

j

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 6 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

003aab101

V

GS(th)

3

max

(V)

2

1

0

-60 0 60 120 180

ID= 0.25 mA; VDS=V

typ

min

GS

T

(°C)

j

Fig 9. Gate-source threshold voltage as a function of

junction temperature

003aab359

V

(V)

10

GS

ID = 0.3 A
T
V

8

= 25 °C

j

= 30 V

DS

-3

10

I

D

003aab100

(A)

-4

10

-5

10

-6

10

0123

min typ max

V

(V)

GS

Tj=25°C; VDS=5V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage

V

DS

6

4

2

0

0 0.2 0.4 0.6 0.8

(nC)

Q

G

ID= 300 mA; VDS=30V

Fig 11. Gate-source voltage as a function of gate

charge; typical values

I

D

V

GS(pl)

V

GS(th)

V

GS

Q

GS1QGS2

Q

G(tot)

Q

GD

003aaa508

Q

GS

Fig 12. Gate charge waveform definitions

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 7 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

1

I

S

(A)

0.8

0.6

0.4

0.2

0

0.2 0.4 0.6 0.8 1

150 °C

03ai17

Tj = 25 °C

(V)

V

SD

Tj=25°C and 150 °C; VGS=0V VGS= 0 V; f = 1 MHz

Fig 13. Source current as a function of source-drain

voltage; typical values

03ai18

C

C

C

VDS (V)

iss

oss

rss

2

C

(pF)

10

10

1

2

-1

10

1 10 10

Fig 14. Input,output and reverse transfer capacitances

as a function of drain-source voltage; typical
values

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 8 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

7. Package outline

Plastic surface-mounted package; 3 leads SOT23

D

3

A

A

1

12

e

1

b

p

e

w M

B

E

H

E

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

UNIT

1.1

mm

0.9

OUTLINE

VERSION

SOT23 TO-236AB

1

A

max.

0.1

cD

b

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

3.0

2.8

E

1.4

1.2

REFERENCES

1.9

e

e

0.95

HEL

1

2.5

2.1

0.45

0.15

Qwv

p

0.55

0.2

0.45

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

Fig 15. Package outline SOT23

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 9 of 12

Philips Semiconductors

2N7002F

N-channel TrenchMOS FET

8. Revision history

Table 6: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

2N7002F_3 20060428 Product data sheet - - 2N7002F_2
Modifications:

• Table 5 “Characteristics”: V

• Table 5 “Characteristics”: V

• Table 5 “Characteristics”: R

• Table 5 “Characteristics”: g

GS(th) ID
GS(th)
DSon

fs

• Table 5 “Characteristics”: Addition of Q

• Table 5 “Characteristics”: C

• Table 5 “Characteristics”: t

iss

on

• Figure 3, 4, 5, 6, 7, 9, 10, 13 and 14: modified

• Figure 11: added

2N7002F_2 20050509 Product data sheet - 9397 750 14945 2N7002F-01
2N7002F-01 20020211 Product data - 9397 750 09096 -

condition modified

maximum limits modified

typical values modified

removed

, QGS and Q

G(tot)

, C

and C

oss

and t

typical values modified

off

values modified

rss

GD

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 10 of 12

Philips Semiconductors

9. Data sheet status

2N7002F

N-channel TrenchMOS FET

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification Thisdata sheet containsdata from the preliminary specification.Supplementary datawill be published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

10. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
makes norepresentation or warrantythat such applicationswill be suitablefor
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a laterdate.Philips Semiconductors reserves the right tochange the specification without notice, in
order to improve the design and supply the best possible product.

right to make changesatany time in order to improvethedesign, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes norepresentations or warrantiesthat these productsare
free frompatent, copyright, or maskwork right infringement, unless otherwise
specified.

12. Trademarks

11. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.

TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

13. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

2N7002F_3 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.

Product data sheet Rev. 03 — 28 April 2006 11 of 12

Philips Semiconductors

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11

10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

13 Contact information . . . . . . . . . . . . . . . . . . . . 11

2N7002F

N-channel TrenchMOS FET

© Koninklijke Philips Electronics N.V. 2006

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 28 April 2006

Document number: 2N7002F_3