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2N7002
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-23 CASE
MAXIMUM RATINGS (TA=25oC)
SYMBOL UNITS
Drain-Source Voltage V
Drain-Gate Voltage V
Gate-Source Voltage V
Continuous Drain Current (TC=25oC) I
Continuous Drain Current (TC=100oC) I
Continuous Source Current (Body Diode) I
Maximum Pulsed Drain Current I
Maximum Pulsed Source Current I
Power Dissipation P
Operating and Storage
Junction Temperature TJ,T
Thermal Resistance Θ
DS
DG
GS
D
D
S
DM
SM
D
JA
TM
CentralCentral
Central
CentralCentral
Semiconductor Corp.Semiconductor Corp.
Semiconductor Corp.
Semiconductor Corp.Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002
type is a N-Channel Field Effect Transistor,
manufactured by the N-Channel DMOS
Process, designed for high speed pulsed
amplifier and driver applications.
Marking Code is 702.
60 V
60 V
40 V
115 mA
75 mA
115 mA
800 mA
800 mA
350 mW
stg
-55 to +150
357
o
C
o
C/W
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
GSSF
I
GSSR
I
DSS
I
DSS
I
D(ON)
BV
DSS
V
GS(th)
V
DS(ON)
V
DS(ON)
r
DS(ON)
VGS=20V 100 nA
VGS=-20V -100 nA
VDS=60V, VGS=0 1.0 µA
VDS=60V, VGS=0, TA=125oC 500 µA
V
≥ 2V
DS
ID=10µA 60 105 V
VDS=VGS, ID=250µA 1.0 2.1 2.5 V
VGS=10V, ID=500mA 3.75 V
VGS=5.0V, ID=50mA 1.5 V
VGS=10V, ID=500mA 3.7 7.5 Ω
DS(ON)
, VGS=10V 500 mA
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SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
r
DS(ON)
r
DS(ON)
r
DS(ON)
g
FS
C
rss
C
iss
C
oss
t
on
t
off
V
SD
VGS=10V, ID=500mA, TA=100oC 13.5 Ω
VGS=5.0V, ID=50mA 6.2 7.5 Ω
VGS=5.0V, ID=50mA, TA=100oC 13.5 Ω
V
DS
≥ 2V
DS(ON)
, ID=200mA 80 mmhos
VDS=25V, VGS=0, f=1.0MHz 5.0 pF
VDS=25V, VGS=0, f=1.0MHz 50 pF
VDS=25V, VGS=0, f=1.0MHz 25 pF
VDD=30V, ID=10V, RG=25Ω, RL=25Ω 20 ns
VDD=30V, ID=10V, RG=25Ω, RL=25Ω 20 ns
VGS=0V, IS=11.5mA -1.5 V
All dimensions in inches (mm).
LEAD CODE:
1) GATE
2) SOURCE
3) DRAIN
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R2
R1
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