Page 1
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
60V 7.5Ω 0.5A 2N7002
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
DS(ON)
(max) (min) TO-236AB*
I
D(ON)
Order Number / Package
2N7002
Product marking for TO-236AB:
702❋
where ❋ = 2-week alpha date code
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
and fast switching speeds
ISS
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Driver (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
DSS
DGS
Gate Source
TO-236AB
(SOT-23)
top view
Note: See Package Outline section for dimensions.
7-9
Page 2
Thermal Characteristics
Package I
(continuous)* ID (pulsed) Power Dissipation
D
@ TA = 25°C °C/W °C/W
TO-236AB 115mA 800mA 0.36W 200 350 115mA 800mA
ID (continuous) is limited by max rated Tj.
*
θ
jc
θ
ja
IDR*I
DRM
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
(ON)
t
(OFF)
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage 60 V ID = 10µA, VGS = 0V
Gate Threshold Voltage 1.0 2.5 V VGS = VDS, ID = 250µA
Change in V
with Temperature -5.5 mV/°CID = 250µA, V
GS(th)
GS
= V
Gate Body Leakage ±100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 1 µAV
500 µAV
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
T
= 125°C
A
ON-State Drain Current 500 mA VGS = 10V, VDS = 25V
Static Drain-to-Source
ON-State Resistance
Change in R
with Temperature 1.0 %/°CV
DS(ON)
Forward Transconductance 80 m VDS = 25V, ID = 0.5A
7.5 Ω VGS = 5V, ID = 50mA
7.5 Ω V
= 10V, ID = 0.5A
GS
= 10V, ID = 0.5A
GS
Ω
Input Capacitance 50
Common Source Output Capacitance 25 pF V
= 0V, VDS = 25V, f = 1MHz
GS
Reverse Transfer Capacitance 5
Turn-ON Time 20 ns
Turn-OFF Time 20
VDD = 30V, ID = 0.2A,
R
= 25Ω
GEN
Diode Forward Voltage Drop 1.2 V ISD = 0.2A, VGS = 0V
Reverse Recovery Time 400 ns ISD = 0.8A, VGS = 0V
DS
2N7002
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
7-10
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
2N7002
Output Characteristics
2.0
1.6
1.2
(amperes)
0.8
D
I
0.4
0
0102030 5040
VDS (volts)
Transconductance vs. Drain Current
0.5
0.4
VDS = 25V
VGS =
10V
9V
8V
7V
6V
5V
4V
3V
Saturation Characteristics
2.0
1.6
1.2
0.8
(amperes)
D
I
0.4
0
0246 108
V
DS
Power Dissipation vs. Temperature
0.5
0.4
(volts)
VGS =
10V
9V
8V
7V
6V
5V
4V
3V
0.3
(siemens)
0.2
FS
G
0.1
0
0 0.40.2
1.0
0.1
(amperes)
D
I
0.01
TA = -55°C
25°C
125°C
0.6 1.00.8
ID (amperes)
Maximum Rated Safe Operating Area
SOT-23 (pulsed)
SOT-23 (DC)
0.3
(watts)
D
0.2
P
0.1
1.0
0.8
0.6
0.4
0
SOT-23
0 15010050
TA(°C)
Thermal Response Characteristics
1257525
0.001
0.1 100101
TA = 25°C
VDS(volts)
7-11
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
tp (seconds)
SOT-23
= 25°C
T
A
PD = 0.36W
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.1
1.0
(normalized)
DSS
BV
10
(ohms)
DS(ON)
R
On-Resistance vs. Drain Current
V
= 5V
8
6
4
2
GS
2N7002
V
= 10V
GS
0.9
-50 0 50 100 150
T
Tj (°C)
Transfer Characteristics
2.0
VDS = 25V
1.6
°C
= -55
T
A
1.2
(amperes)
0.8
D
I
0.4
0
0246810
(volts)
V
GS
125°C
Capacitance vs. Drain-to-Source Voltage
50
f = 1MHz
25°C
0
0 0.5 1.0 1.5 2.52.0
I
(amperes)
D
V
and
GS(th)
1.4
1.2
1.0
(normalized)
GS(th)
0.8
V
0.6
-50 0 50 100 150
R
Variation with Temperature
DS(ON)
R
@ 10V, 0.5A
DS(ON)
V
GS(th)
Tj (°C)
Gate Drive Dynamic Characteristics
10
8
VDS = 10V
@ 1mA
2.0
1.6
1.2
0.8
0.4
0
DS(ON)
R (normalized)
C
ISS
25
C (picofarads)
0
0 10203040
C
OSS
C
RSS
VDS (volts)
7-12
6
(volts)
GS
4
V
2
0
0 0.2 0.4
30 pF
90 pF
(nanocoulombs)
Q
G
0.6
VDS = 40V
0.8 1.0
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