Page 1
PRODUCT SUMMARY
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
Part Number V
2N7000
2N7002 7.5 @ VGS = 10 V 1 to 2.5 0.115
VQ1000J
VQ1000P 5.5 @ VGS = 10 V 0.8 to 2.5 0.225
BS170 5 @ VGS = 10 V 0.8 to 3 0.5
(BR)DSS
Min (V)
60
V
r
Max (W)
DS(on)
5 @ VGS = 10 V 0.8 to 3 0.2
5.5 @ VGS = 10 V 0.8 to 2.5 0.225
(V) ID (A)
GS(th)
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 2.5 W
D Low Threshold: 2.1 V
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output Leakage
TO-226AA
(TO-92)
S
G
D
1
2
3
Top View
2N7000
Dual-In-Line
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-236
(SOT-23)
G
1
S
2
Top View
Marking Code: 72wll
72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability
D
3
D
1
N
N
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
S
1
G
1
NC NC
G
2
S
2
D
2
1
2
3
4
5
6
7
Top View
Plastic: VQ1000J
Sidebraze: VQ1000P
D
4
14
S
13
G
12
11
G
10
S
9
D
8
N
4
4
3
3
N
3
TO-92-18RM
(TO-18 Lead Form)
D
G
S
1
2
3
Top View
BS170
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11-1
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2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single Total Quad
Parameter Symbol 2N7000 2N7002
Drain-Source Voltage V
Gate-Source Voltage—Non-Repetitive V
Gate-Source Voltage—Continuous V
Continuous Drain Current
Continuous Drain Current
(T
= 150_C)
J
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient R
Operating Junction and
Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
b. t
v 50 ms.
p
a
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
GSM
I
P
TJ, T
DS
GS
I
D
DM
thJA
60 60 60 60 60
"40 "40 "30 "25
"20 "20 "20 "20 "20
0.2 0.115 0.225 0.225 0.5
0.13 0.073 0.14 0.14 0.175
0.5 0.8 1 1
D
stg
0.4 0.2 1.3 1.3 2 0.83
0.16 0.08 0.52 0.52 0.8
312.5 625 96 96 62.5 156
VQ1000J VQ1000P
–55 to 150
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Common Source Output Conductance
b
b
b
b
(BR)DSS
r
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
GS(th)
GSS
DSS
I
D(on)
DS(on)
DS(on)
g
fs
g
os
iss
oss
rss
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 1 mA 2.1 0.8 3
VDS = VGS, ID = 0.25 mA 2.0 1 2.5
VDS = 0 V, VGS = "15 V "10
VDS = 0 V, VGS = "20 V "100
VDS = 48 V, VGS = 0 V 1
TC = 125_C
VDS = 60 V, VGS = 0 V 1
TC = 125_C
VDS = 10 V, VGS = 4.5 V 0.35 0.075
VDS = 7.5 V, VGS = 10 V 1 0.5
VGS = 4.5 V, ID = 0.075 A 4.5 5.3
VGS = 5 V, ID = 0.05 A 3.2 7.5
TC = 125_C
VGS = 10 V, ID = 0.5 A 2.4 5 7.5
TJ = 125_C
VDS = 10 V, ID = 0.2 A 100 80
VDS = 5 V, ID = 0.05 A 0.5
VDS = 25 V, VGS = 0 V
f = 1 MHz
f = 1 MHz
70 60 60
5.8 13.5
4.4 9 13.5
22 60 50
11 25 25
2 5 5
VQ1000J/P
Limits
2N7000 2N7002
1000
BS170 Unit
V
A
W
_C/W
_C
V
nA
mA
500
A
W
mS
pF
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11-2
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
Page 3
2N7000/2N7002, VQ1000J/P, BS170
W
W
m
W
W
Vishay Siliconix
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
Switching
Turn-On Time t
Turn-Off Time t
Turn-On Time t
Turn-Off Time t
SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Common Source Output Conductance
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Switching
Turn-On Time t
Turn-Off Time t
Turn-On Time t
Turn-Off Time t
d
ON
OFF
ON
OFF
VDD = 15 V, RL = 25 W
VDD = 15 V, RL = 25
ID ^0.5 A, V
ID ^ 0.2 A, V
GEN
VDD = 30 V, RL = 150 W
VDD = 30 V, RL = 150
GEN
= 10 V, RG = 25 W
= 10 V, RG = 25 W
7 10
7 10
7 20
11 20
Limits
VQ1000J/P BS170
Parameter Symbol Test Conditions TypaMin Max Min Max Unit
(BR)DSS
GS(th)
GSS
GSS
DSS
DSS
b
b
b
b
I
D(on)
r
DS(on)
g
g
fs
os
iss
oss
rss
VGS = 0 V, ID = 100 mA
VDS = VGS, ID = 1 mA 2.1 0.8 2.5 0.8 3
VDS = 0 V, VGS = "10 V "100
TJ = 125_C
VDS = 0 V, VGS = "15 V "10
VDS = 25 V, VGS = 0 V 0.5
VDS = 48 V, VGS = 0 V, TJ = 125_C
VDS = 60 V, VGS = 0 V 10
VDS = 10 V, VGS = 10 V 1 0.5 A
VGS = 5 V, ID = 0.2 A 4 7.5
VGS = 10 V, ID = 0.2 A 2.3 5
VGS = 10 V, ID = 0.3 A 2.3 5.5
TJ = 125_C
VDS = 10 V, ID = 0.2 A 100
VDS = 10 V, ID = 0.5 A 100
VDS =5 V, ID = 0.05 A 0.5
VDS =25 V, VGS = 0 V
f = 1 MHz
f = 1 MHz
d
ON
OFF
ON
OFF
VDD = 15 V, RL = 23 W
VDD = 15 V, RL = 23
ID ^ 0.6 A, V
ID ^ 0.2 A, V
GEN
VDD = 25 V, RL = 125 W
VDD = 25 V, RL = 125
GEN
= 10 V, RG = 25 W
= 10 V, RG = 25 W
70 60 60
"500
500
4.2 7.6
22 60 60
11 25
2 5
7 10
7 10
7 10
7 10
ns
V
nA
mA
W
mS
pF
ns
Notes
a. For DESIGN AID ONLY, not subject to production testing. VNBF06
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-3
Page 4
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
1.0
Output Characteristics Transfer Characteristics
VGS = 10, 9, 8, 7 V
0.8
0.6
0.4
– Drain Current (A)
D
I
0.2
0.0
0123456
VDS – Drain-to-Source Voltage (V)
7
6
5
4
3
– On-Resistance ( Ω )
2
DS(on)
r
1
0
0.0 0.2 0.4 0.6 0.8 1.0
I
– Drain Current (A)
D
rDS @ 5 V = V
rDS @ 10 V = V
6.5 V
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V 2.5 V
GS
GS
2, 1 V
1.0
0.8
TJ = –55_C
0.6
0.4
– Drain Current (A)
D
I
0.2
0.0
012345678
– Gate-to-Source Voltage (V)
V
GS
CapacitanceOn-Resistance vs. Drain Current
60
VGS = 0 V
f = 1 MHz
50
40
30
20
C – Capacitance (pF)
10
0
0 5 10 15 20 25 30 35
– Drain-to-Source Voltage (V)
V
DS
C
iss
C
oss
C
rss
25_C
125_C
20
16
12
8
4
– Gate-to-Source Voltage (V)
GS
V
0
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11-4
Gate Charge
ID = 0.5 A
VDS = 30 V
0 400 800 1200 1600 2000 2400
Qg – Total Gate Charge (pC)
(Normalized)
– On-Resistance ( Ω )
DS(on)
r
On-Resistance vs. Junction Temperature
2.0
VGS = 10 V, rDS @ 0.5 A
1.5
1.0
VGS = 5 V, rDS @ 0.05 A
0.5
0.0
–55 –30 –5 20 45 70 95 120 145
T
– Junction Temperature (_C)
J
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
Page 5
2N7000/2N7002, VQ1000J/P, BS170
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Vishay Siliconix
1.000
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
TJ = 125_C
0.100
T
= 25_C
J
0.010
– Source Current (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V)
0.50
0.25
–0.00
– On-Resistance ( Ω )
DS(on)
r
Threshold Voltage
ID = 250 mA
6
I
5
4
= 50 mA
D
500 mA
3
2
1
0
0 2 4 6 8 101214161820
– Variance (V)
–0.25
GS(th)
V
–0.50
–0.75
–50 –25 0 25 50 75 100 125 150
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Thermal Impedance
Normalized Effective Transient
0.01
0.1 1 10010 1 K
0.01
Single Pulse
t1 – Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM – TA = PDMZ
2
thJA
t
t
thJA
1
2
(t)
= 156_C/W
10 K
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
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11-5
Page 6
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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