Datasheet 2N7002 Datasheet (BL Galaxy Electrical) [ru]

BL Galaxy Electrical Production specification

Small Signal MOSFET Transistor 2N7002

FEATURES

z High Density Cell Design For Low

R

DS(ON)。

z Voltage Controlled Small Switch.

z Rugged and Reliable.

z High Saturation Current Capability.

Pb

Lead-free

APPLICATIONS

z N-channel enhancement mode effect transistor.

z Switching application. SOT-23

ORDERING INFORMATION

Type No. Marking Package Code

2N7002 3P SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol Parameter Value Units

V

DSS

V

DGR

V

GSS

I

D

P

D

R

θJA

TJ, Tstg Junction and Storage Temperature -55-150

Drain-Source voltage 60 V

Drain-Gate voltage(RGS≤1MΩ) 60 V

Gate -Source voltage - continuous

-Non Repetitive (t

Maximum Drain current -continuous

-Pulsed

Power Dissipation 200 mW

Thermal resistance,Junction-to-Ambient 625

<50μs)

p

±20
±40

115

800

V

mA

℃/W

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSMTC008 www.galaxycn.com
Rev.A 1

BL Galaxy Electrical Production specification

V

V

V

V

Small Signal MOSFET Transistor 2N7002

Parameter Symbol Test conditions MIN TYP MAX UNIT

Drain-Source Breakdown Voltage V

Gate Threshold Voltage V

Gate-body Leakage Forward

Reverse

Zero Gate Voltage Drain Current I

On-state Drain Current I

Drain-Source on-voltage V

Forward transconductance g

Static drain-Source on-resistance R

Drain-Source diode forward

voltage

(BR)DSSVGS

GS(th)

I

GSS

DSS

D(On)

DS(ON)

FS

DS(ON)

V

SD

=0V,ID=10μA 60

V

VDS=VGS, ID=250μA 1 2.1 2.5

VDS=0V, VGS=20V

V

=0V, VGS=-20V

DS

100

-100

nA

VDS=60V, VGS=0V 1

μA

VDS=60V,VGS=0V,Tj=125℃

VGS=10V, V

≥2.0V

S

D

DS(ON)

VGS=10V,ID=500mA

V

=5V,ID=50mA

GS

V

≥2.0V

S

D

GS

GS

GS

GS

DS(ON),ID

=10V,ID=500mA

=10V,ID=500mA,Tj=100℃

=5.0V,ID=50mA

=5.0V,ID=50mA, Tj=100℃

=200mA

500

500 2700 mA

0.6

0.09

3.75

1.5

V

80 320 mS

1.2

1.7

1.7

2.4

7.5

13.5

7.5

13.5

Ω

VGS=0V,ID=115mA 0.88 1.5 V

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-On Delay Time t

Turn-Off Delay Time t

ISS

OSS

RSS

D(ON)

D(OFF)

VDS=25V,VGS=0V,f=1.0MHz

VDD = 30V, ID= 0.2A,

R

= 150Ω, VGS= 10V,

L

R

= 25Ω

GEN

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

20 50

11 25

pF

4 5

20 ns

20 ns

Document number: BL/SSMTC008 www.galaxycn.com
Rev.A 2

BL Galaxy Electrical Production specification

Small Signal MOSFET Transistor 2N7002

Document number: BL/SSMTC008 www.galaxycn.com
Rev.A 3

BL Galaxy Electrical Production specification

Small Signal MOSFET Transistor 2N7002

PACKAGE OUTLINE

Plastic surface mounted package SOT-23

Dim Min Max

A 2.85 2.95

B 1.25 1.35

C 1.0Typical

D 0.37 0.43

E 0.35 0.48

G 1.85 1.95

SOT-23

SOLDERING FOOTPRINT

H 0.02 0.1

J 0.1Typical

K 2.35 2.45

All Dimensions in mm

Unit : mm

PACKAGE INFORMATION

Device Package Shipping

2N7002 SOT-23 3000/Tape&Reel

Document number: BL/SSMTC008 www.galaxycn.com
Rev.A 4